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.2 A Small Signal Bipolar Junction Transistors (BJT) 103

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
SMMBT2369LT1G by Onsemi

SMMBT2369LT1G

Onsemi

SMMBT2369LT1G by Onsemi is a NPN BJT transistor with 3 terminals, suitable for switching applications. It has a max power dissipation of 0.3W and can handle a max collector-emitter voltage of 15V. With a small outline package style, it operates at up to 150°C and has a min DC current gain of 20 (hFE).

.2 A

15 V

SINGLE

20

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

.3 W

AEC-Q101

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

18 ns

12 ns

MMBT2369A_R1_00001 by Panjit International

MMBT2369A_R1_00001

Panjit International

MMBT2369A_R1_00001 by Panjit International is a small signal NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 15V and a max collector current of 0.2A. It is commonly used in applications requiring low power amplification or switching, such as audio amplifiers or digital logic circuits.

.2 A

15 V

SINGLE

40

R-PDSO-G3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

SILICON

MMBT3906-TP-HF by Micro Commercial Components

MMBT3906-TP-HF

Micro Commercial Components

MMBT3906-TP-HF by Micro Commercial Components is a PNP BJT transistor with 3 terminals, suitable for amplifier applications. With a max power dissipation of 0.3W and max collector-emitter voltage of 40V, it operates b/w -55 to 150°C. This surface-mount transistor has a transition frequency of 250MHz and turn-on time of 70ns, making it ideal for small outline packages in electronic circuits.

.2 A

40 V

SINGLE

30

R-PDSO-G3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

10

AMPLIFIER

SILICON

250 MHz

305 ns

70 ns

BFN18E6327HTSA1 by Infineon Technologies

BFN18E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70 MHz; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;

COLLECTOR

.2 A

300 V

SINGLE

30

R-PSSO-F3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

FLAT

SINGLE

SWITCHING

SILICON

70 MHz

SMBT3904E6433HTMA1 by Infineon Technologies

SMBT3904E6433HTMA1

Infineon Technologies

Infineon's SMBT3904E6433HTMA1 is a NPN BJT transistor with max. Vce of 40V, hFE of 70, and fT of 300MHz. Ideal for switching applications due to its fast turn-on/off times and small outline package style. Suitable for surface mount designs with Gull Wing terminals in plastic/epoxy body material.

.2 A

40 V

SINGLE

70

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

300 MHz

250 ns

70 ns

MBT3906DW1T2G by Onsemi

MBT3906DW1T2G

Onsemi

MBT3906DW1T2G by Onsemi is a PNP BJT transistor with hFE of 100, fT of 250 MHz, and IC of 0.2 A. Ideal for surface mount applications with max temp of 150 °C, it's suitable for low-power amplification in electronic circuits.

.2 A

100

e3

1

150 Cel

260

PNP

.15 W

Other Transistors

YES

TIN

30

250 MHz

FMMTA42QTA by Diodes Incorporated

FMMTA42QTA

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL;

HIGH RELIABILITY

.2 A

300 V

SINGLE

40

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

50 MHz

BFN39E6327HTSA1 by Infineon Technologies

BFN39E6327HTSA1

Infineon Technologies

Infineon's BFN39E6327HTSA1 is a PNP BJT transistor with 300V VCE, 0.2A IC, and 100MHz fT. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and small outline package design.

COLLECTOR

.2 A

300 V

SINGLE

30

R-PDSO-G4

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

SMBT3904PNH6327XTSA1 by Infineon Technologies

SMBT3904PNH6327XTSA1

Infineon Technologies

SMBT3904PNH6327XTSA1 by Infineon Technologies is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features a max collector-emitter voltage of 40V, hFE of 30, and fT of 250MHz. With a package style of small outline and Gull Wing terminals, it's suitable for surface mount designs in various electronic circuits.

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

AEC-Q101

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

300 ns

70 ns

SMBT3904SH6327XTSA1 by Infineon Technologies

SMBT3904SH6327XTSA1

Infineon Technologies

Infineon's SMBT3904SH6327XTSA1 is a NPN BJT transistor for switching applications. With hFE of 30, VCE of 40V, and fT of 300MHz, it offers fast ton of 70ns and toff of 250ns. Its Gull Wing terminals in a small outline package make it ideal for surface mount designs.

.2 A

40 V

SINGLE

30

R-PDSO-G6

e3

1

1

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

250 ns

70 ns

SMBT3906UE6327HTSA1 by Infineon Technologies

SMBT3906UE6327HTSA1

Infineon Technologies

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Package Style (Meter): SMALL OUTLINE;

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

300 ns

70 ns

2N3903/D26Z by National Semiconductor

2N3903/D26Z

National Semiconductor

2N3903/D26Z by National Semiconductor is a NPN BJT transistor with VCEsat of 0.2V, hFE of 50, and IC of 0.2A. Ideal for switching applications due to its fast ton of 70ns and toff of 225ns. With a max VCE of 40V and fT of 250MHz, it offers reliable performance in various electronic circuits.

HIGH SPEED SATURATED SWITCHING

.2 A

40 V

SINGLE

50

TO-92

O-PBCY-T3

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

250 MHz

225 ns

70 ns

.2 V

BCX70KT216 by ROHM

BCX70KT216

ROHM

ROHM BCX70KT216 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 380, and fT of 125MHz. Ideal for amplifier applications due to its low saturation voltage and high transition frequency. Features GULL WING terminals in a SMALL OUTLINE package suitable for surface mount assembly.

LOW NOISE

.2 A

4.5 pF

45 V

SINGLE

380

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

GULL WING

DUAL

AMPLIFIER

SILICON

125 MHz

.3 V

BCW60CT116 by ROHM

BCW60CT116

ROHM

ROHM BCW60CT116 is a NPN BJT transistor with max VCEsat of 0.3V, hFE of 260, and fT of 125MHz. Ideal for amplifier applications due to its small outline package style and max operating temp of 150°C. Suitable for surface mount designs with Gull Wing terminals and rectangular shape.

LOW NOISE

.2 A

4.5 pF

32 V

SINGLE

260

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

GULL WING

DUAL

AMPLIFIER

SILICON

125 MHz

.3 V

BCX70JT116 by ROHM

BCX70JT116

ROHM

ROHM BCX70JT116 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 250, and fT of 125MHz. Ideal for amplifier applications due to its small outline package style and max collector-emitter voltage of 45V. Suitable for surface mount designs with GULL WING terminals.

LOW NOISE

.2 A

4.5 pF

45 V

SINGLE

250

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

AMPLIFIER

SILICON

125 MHz

.3 V

BCX70KT116 by ROHM

BCX70KT116

ROHM

ROHM's BCX70KT116 is a NPN small signal bipolar junction transistor (BJT) with a max VCEsat of 0.3V, making it suitable for amplifier applications. It has a min DC current gain (hFE) of 380 and can handle a max collector-emitter voltage of 45V.

LOW NOISE

.2 A

4.5 pF

45 V

SINGLE

380

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

AMPLIFIER

SILICON

125 MHz

.3 V

MMST3904T146 by ROHM

MMST3904T146

ROHM

ROHM MMST3904T146 is a NPN BJT transistor with VCEsat of 0.3V, hFE of 30, and IC of 0.2A. Ideal for switching applications due to its fast turn on/off times (ton: 70ns, toff: 250ns) and high transition frequency (fT: 300MHz). Suitable for surface mount designs in small outline packages.

.2 A

4 pF

40 V

SINGLE

30

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.35 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SWITCHING

SILICON

300 MHz

250 ns

70 ns

.3 V

MMBT3904TT1 by Onsemi

MMBT3904TT1

Onsemi

MMBT3904TT1 by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 40V, DC current gain of 30, and transition frequency of 300MHz. With a small outline package style and Gull Wing terminal form, it operates at up to 150°C.

.2 A

40 V

SINGLE

30

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.15 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

AMPLIFIER

SILICON

300 MHz

250 ns

70 ns

BFN19H6327XTSA1 by Infineon Technologies

BFN19H6327XTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; JESD-30 Code: R-PSSO-F3;

COLLECTOR

.2 A

300 V

SINGLE

30

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

TIN

FLAT

SINGLE

SWITCHING

SILICON

100 MHz

VT6X1T2R by ROHM

VT6X1T2R

ROHM

ROHM's VT6X1T2R is a NPN BJT with 2 elements, ideal for switching applications. It has a max power dissipation of 0.15W, hFE of 120, and fT of 400MHz. With a max collector-emitter voltage of 20V and max collector current of 0.2A, it operates up to 150°C making it suitable for various electronic designs.

.2 A

20 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-F6

e2

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

DUAL

10

SWITCHING

SILICON

400 MHz

2N4125TFR by Fairchild Semiconductor

2N4125TFR

Fairchild Semiconductor

2N4125TFR by Fairchild Semiconductor is a PNP BJT transistor with a max collector-emitter voltage of 30V and max current of 0.2A. It has a min DC current gain of 25, making it suitable for switching applications with a max power dissipation of 0.35W in cylindrical package style.

.2 A

30 V

SINGLE

25

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

MMDT3946LP4-7 by Diodes Incorporated

MMDT3946LP4-7

Diodes Incorporated

NPN AND PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;

.2 A

40 V

SINGLE

30

R-PDSO-N6

e4

1

1

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SILICON

300 MHz

70 ns

250 ns

2N3904,116 by NXP Semiconductors

2N3904,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Transistor Element Material: SILICON;

.2 A

4 pF

40 V

SINGLE

30

TO-92

O-PBCY-T3

e3

NOT APPLICABLE

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

300 MHz

240 ns

65 ns

.3 V

2N3904,412 by NXP Semiconductors

2N3904,412

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;

.2 A

4 pF

40 V

SINGLE

30

TO-92

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

NPN

.5 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

300 MHz

240 ns

65 ns

.3 V

2N3906,116 by NXP Semiconductors

2N3906,116

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;

.2 A

4.5 pF

40 V

SINGLE

30

TO-92

O-PBCY-T3

1

3

150 Cel

-65 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NOT SPECIFIED

PNP

.5 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

250 MHz

300 ns

65 ns

.4 V

PH2369,112 by NXP Semiconductors

PH2369,112

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;

.2 A

4 pF

15 V

SINGLE

20

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

.5 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

500 MHz

20 ns

10 ns

.25 V

PZT3904,115 by NXP Semiconductors

PZT3904,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Case Connection: COLLECTOR;

COLLECTOR

.2 A

4 pF

40 V

SINGLE

30

R-PDSO-G4

e3

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

1.5 W

Not Qualified

YES

TIN

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

300 MHz

240 ns

65 ns

.3 V

PH2369,116 by NXP Semiconductors

PH2369,116

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .2 A; Terminal Finish: TIN;

.2 A

4 pF

15 V

SINGLE

20

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

Not Qualified

NO

TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

500 MHz

20 ns

10 ns

.25 V

MMDT3946-TP by Micro Commercial Components

MMDT3946-TP

Micro Commercial Components

MMDT3946-TP by Micro Commercial Components is a Small Signal BJT with NPN and PNP types. It has 2 elements, 6 terminals, and can handle up to 40V. Ideal for switching applications, it offers a transition frequency of 300MHz and operates at temperatures up to 150°C.

.2 A

40 V

SEPARATE, 2 ELEMENTS

100

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

10

SWITCHING

SILICON

300 MHz

250 ns

70 ns

MMBT4126LT1 by Onsemi

MMBT4126LT1

Onsemi

MMBT4126LT1 by Onsemi is a PNP BJT transistor with 3 terminals, max power dissipation of 0.225W, and max collector-emitter voltage of 25V. It is used in small outline packages for applications requiring a min DC current gain of 60, such as signal amplification in electronic circuits.

.2 A

25 V

SINGLE

60

TO-236AB

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

PNP

.225 W

Not Qualified

Other Transistors

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

SILICON

250 MHz

MMBT3904T-7 by Diodes Incorporated

MMBT3904T-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .2 A;

.2 A

40 V

SINGLE

30

R-PDSO-G3

e0

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SILICON

300 MHz

250 ns

70 ns

HN1B01FDW1T1 by Onsemi

HN1B01FDW1T1

Onsemi

HN1B01FDW1T1 by Onsemi is a small signal bipolar junction transistor (BJT) with NPN and PNP polarity. It has a max power dissipation of 0.38 W and is commonly used as an amplifier in various applications. This surface mount transistor has a rectangular package shape with gull wing terminals, making it suitable for compact designs.

.2 A

50 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

e0

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN AND PNP

.38 W

Not Qualified

BIP General Purpose Small Signal

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

AMPLIFIER

SILICON

MMDT3904-7 by Diodes Incorporated

MMDT3904-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .2 A;

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

250 ns

70 ns

MMDT3906-7 by Diodes Incorporated

MMDT3906-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

300 ns

70 ns

2N4125BU by Fairchild Semiconductor

2N4125BU

Fairchild Semiconductor

2N4125BU by Fairchild Semiconductor is a PNP BJT with max. power dissipation of 0.35W, hFE of 25, and max. collector-emitter voltage of 30V. Ideal for switching applications due to its single configuration and cylindrical package style. Operates at a max temp of 150°C with a max collector current of 0.2A.

.2 A

30 V

SINGLE

25

TO-92

O-PBCY-T3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

40

SWITCHING

SILICON

2N4125TA by Fairchild Semiconductor

2N4125TA

Fairchild Semiconductor

2N4125TA by Fairchild Semiconductor is a PNP BJT transistor with max. power dissipation of 0.35W, hFE of 25, and max. collector-emitter voltage of 30V. Ideal for switching applications due to its single configuration and cylindrical package style with through-hole terminals.

.2 A

30 V

SINGLE

25

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.35 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

MMBT3904-7 by Diodes Incorporated

MMBT3904-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;

.2 A

40 V

SINGLE

30

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.225 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

250 ns

70 ns

DMMT3904W-7 by Diodes Incorporated

DMMT3904W-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Turn On Time (ton): 70 ns;

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

300 MHz

250 ns

70 ns

DMMT3906W-7 by Diodes Incorporated

DMMT3906W-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Terminal Form: GULL WING;

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

300 ns

70 ns

NUS2401SNT1 by Onsemi

NUS2401SNT1

Onsemi

NUS2401SNT1 by Onsemi is a Small Signal BJT with NPN/PNP polarity, 50V VCE, and 0.2A IC. It's used for switching applications in complex configurations. The package is surface mountable with Gull Wing terminals and a max power dissipation of 0.35W.

BUILT IN BIAS RESISTORS

.2 A

50 V

COMPLEX

150

R-PDSO-G6

e0

3

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN AND PNP

.35 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

MMBT3906-7 by Diodes Incorporated

MMBT3906-7

Diodes Incorporated

Diodes Inc. MMBT3906-7 is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 40V. Ideal for switching applications, it has a min. DC current gain of 30 and operates b/w -55 to 150°C efficiently in a small outline package shape for surface mount assembly.

.2 A

40 V

SINGLE

30

R-PDSO-G3

e0

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.3 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

300 ns

70 ns

MMBT4124-7 by Diodes Incorporated

MMBT4124-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Shape: RECTANGULAR;

.2 A

25 V

SINGLE

60

R-PDSO-G3

e0

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

MMBT5401-7 by Diodes Incorporated

MMBT5401-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; Package Shape: RECTANGULAR;

.2 A

150 V

SINGLE

50

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMBT5551-7 by Diodes Incorporated

MMBT5551-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; No. of Terminals: 3;

.2 A

160 V

SINGLE

30

R-PDSO-G3

e0

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMDT3946-7 by Diodes Incorporated

MMDT3946-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

250 ns

70 ns

MMSTA42-7 by Diodes Incorporated

MMSTA42-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .2 A; JESD-609 Code: e0;

.2 A

300 V

SINGLE

40

R-PDSO-G3

e0

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

50 MHz

MMDT4124-7 by Diodes Incorporated

MMDT4124-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL;

.2 A

25 V

SEPARATE, 2 ELEMENTS

60

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

MMDT5551-7 by Diodes Incorporated

MMDT5551-7

Diodes Incorporated

MMDT5551-7 by Diodes Inc. is a NPN BJT with 2 elements, ideal for switching applications. It has a min hFE of 30 and max VCE of 160V. With a fT of 100MHz, this transistor comes in a small outline package suitable for surface mount assembly.

.2 A

160 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz