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.2 A Small Signal Bipolar Junction Transistors (BJT) 103

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
PZT3906T1G by Onsemi

PZT3906T1G

Onsemi

PZT3906T1G by Onsemi is a PNP BJT with 4 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 40V. Ideal for small outline packages in applications requiring a high transition frequency up to 250MHz such as signal amplification in electronic circuits.

COLLECTOR

.2 A

40 V

SINGLE

30

TO-261AA

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

250 MHz

300 ns

70 ns

BC847BLD-7 by Diodes Incorporated

BC847BLD-7

Diodes Incorporated

Diodes Inc. BC847BLD-7 is a NPN BJT with 150 min hFE, 45V VCEO, and 100MHz fT. Ideal for small signal amplification in electronic circuits due to its 0.3W Ptot, 0.2A IC, and SOT-23 package with Gull Wing terminals. Suitable for applications requiring high gain and low power consumption in compact designs.

.2 A

45 V

SINGLE

150

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

100 MHz

NSCT3904LT1G by Onsemi

NSCT3904LT1G

Onsemi

NSCT3904LT1G by Onsemi is a NPN BJT with VCEsat of 0.3V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact GULL WING package.

.2 A

4 pF

40 V

SINGLE

30

TO-236

R-PDSO-G3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

300 MHz

250 ns

70 ns

.3 V

NSCT3904LT3G by Onsemi

NSCT3904LT3G

Onsemi

NSCT3904LT3G by Onsemi is a NPN BJT with VCEsat of 0.3V, hFE of 30, and fT of 300MHz. Ideal for small signal applications in electronics due to its low power dissipation, high transition frequency, and compact small outline package style.

.2 A

4 pF

40 V

SINGLE

30

TO-236

R-PDSO-G3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

300 MHz

250 ns

70 ns

.3 V

MMDT3904-TPQ2 by Micro Commercial Components

MMDT3904-TPQ2

Micro Commercial Components

NPN; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 40 V; Minimum DC Current Gain (hFE): 100;

.2 A

40 V

100

NPN

BFN18H6327XTSA1 by Infineon Technologies

BFN18H6327XTSA1

Infineon Technologies

Infineon's BFN18H6327XTSA1 is a NPN BJT transistor for switching applications. With max. VCE of 300V, IC of 0.2A, and hFE of 30, it operates at up to 150°C. This surface-mount device in a small outline package is ideal for high-frequency switching circuits.

COLLECTOR

.2 A

300 V

SINGLE

30

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

FLAT

SINGLE

SWITCHING

SILICON

70 MHz

BFN26E6433HTMA1 by Infineon Technologies

BFN26E6433HTMA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70 MHz; Maximum Collector Current (IC): .2 A; Transistor Application: SWITCHING;

.2 A

300 V

SINGLE

30

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

SWITCHING

SILICON

70 MHz