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SEPARATE, 2 ELEMENTS Small Signal Bipolar Junction Transistors (BJT) 105

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DMMT5551-7 by Diodes Incorporated

DMMT5551-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; Package Shape: RECTANGULAR;

.2 A

160 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

DMMT5401-7 by Diodes Incorporated

DMMT5401-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; Maximum Operating Temperature: 150 Cel;

.2 A

150 V

SEPARATE, 2 ELEMENTS

50

R-PDSO-G6

e0

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

EMZ1DXV6T1 by Onsemi

EMZ1DXV6T1

Onsemi

The Onsemi EMZ1DXV6T1 is a Small Signal BJT with NPN and PNP channels, ideal for amplifier applications. It features 2 separate elements in a rectangular package with 6 terminals. With a max power dissipation of 0.5W, hFE of 120, and fT of 180MHz, it operates at up to 150 °C and supports a max collector-emitter voltage of 60V.

.1 A

60 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.5 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

180 MHz

EMZ1DXV6T5 by Onsemi

EMZ1DXV6T5

Onsemi

The Onsemi EMZ1DXV6T5 is a Small Signal BJT with NPN and PNP channels, ideal for amplifier applications. It features 2 separate elements in a rectangular package with 6 terminals. With a max power dissipation of 0.5W, hFE of 120, and fT of 180MHz, it operates at up to 150 °C and supports a max VCE of 60V and IC of 0.1A.

.1 A

60 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.5 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

180 MHz

MBT3904DW2T1 by Onsemi

MBT3904DW2T1

Onsemi

MBT3904DW2T1 by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.15W, hFE of 30, and operates up to 150 °C. This transistor features Gull Wing terminals, small outline package style, and can handle a max collector-emitter voltage of 40V.

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

AMPLIFIER

SILICON

300 MHz

250 ns

70 ns

MMDT3904V-7 by Diodes Incorporated

MMDT3904V-7

Diodes Incorporated

MMDT3904V-7 by Diodes Inc. is a NPN BJT with 2 elements, suitable for switching applications. It has a max collector-emitter voltage of 40V, max current of 0.2A, and transition frequency of 300MHz. This transistor comes in a small outline package and operates up to 150°C, making it ideal for compact electronic devices.

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

300 MHz

250 ns

70 ns

MMDT3906V-7 by Diodes Incorporated

MMDT3906V-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .2 A;

HIGH RELIABILITY

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

250 MHz

300 ns

70 ns

EMT1DXV6T5 by Onsemi

EMT1DXV6T5

Onsemi

EMT1DXV6T5 by Onsemi is a PNP BJT with 2 elements, hFE of 120, VCE of 60V, and fT of 140MHz. Ideal for amplifier applications, it features a small outline package with 6 terminals and can handle a max collector current of 0.1A.

.1 A

60 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-F6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

140 MHz

EMX2DXV6T5 by Onsemi

EMX2DXV6T5

Onsemi

The Onsemi EMX2DXV6T5 is a NPN BJT transistor with 2 elements, hFE of 120, and VCE of 50V. Ideal for amplifier applications, it has a transition frequency of 180MHz and can handle a collector current of 0.1A. Suitable for surface mount with a small outline package style.

.1 A

50 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-F6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

180 MHz

DN0150BDJ-7 by Diodes Incorporated

DN0150BDJ-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

.1 A

50 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SILICON

60 MHz

DP0150ADJ-7 by Diodes Incorporated

DP0150ADJ-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

.1 A

50 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SILICON

80 MHz

DP0150BDJ-7 by Diodes Incorporated

DP0150BDJ-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;

.1 A

50 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SILICON

80 MHz

BC847BPDXV6T5G by Onsemi

BC847BPDXV6T5G

Onsemi

BC847BPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP polarity, 2 separate elements, and hFE of 200. It is used in amplifier applications, has a max power dissipation of 0.5W, operates up to 150 °C, with Vce(max) of 45V.

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-F6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

.5 W

Not Qualified

BIP General Purpose Small Signal

YES

Tin (Sn)

FLAT

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz

BC847CDXV6T5G by Onsemi

BC847CDXV6T5G

Onsemi

BC847CDXV6T5G by Onsemi is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.5W, hFE of 420, and Vce of 45V. With a small outline package style and surface mount capability, it operates up to 150 °C and offers a transition frequency of 100MHz.

.1 A

45 V

SEPARATE, 2 ELEMENTS

420

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

Not Qualified

Other Transistors

YES

TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

100 MHz

BC848CDXV6T1G by Onsemi

BC848CDXV6T1G

Onsemi

BC848CDXV6T1G by Onsemi is a NPN BJT transistor with 2 elements, ideal for amplifier applications. It has a min hFE of 420 and can handle a max collector-emitter voltage of 30V. With a small outline package style and peak reflow temperature of 260°C, it offers high performance in compact designs.

.1 A

30 V

SEPARATE, 2 ELEMENTS

420

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

Not Qualified

Other Transistors

YES

TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

100 MHz

BC848CDXV6T5G by Onsemi

BC848CDXV6T5G

Onsemi

BC848CDXV6T5G by Onsemi is a NPN BJT transistor with 2 elements, suitable for amplifier applications. It has a max collector-emitter voltage of 30V, max operating temp of 150 °C, and min DC current gain of 420 (hFE). This small outline package with flat terminals is surface mountable and has a peak reflow temp of 260°C.

.1 A

30 V

SEPARATE, 2 ELEMENTS

420

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

Not Qualified

Other Transistors

YES

TIN

FLAT

DUAL

AMPLIFIER

SILICON

100 MHz

BC858CDXV6T5G by Onsemi

BC858CDXV6T5G

Onsemi

BC858CDXV6T5G by Onsemi is a PNP BJT with 2 elements, suitable for amplifier applications. It has a max power dissipation of 0.5W, hFE of 420, and operates up to 150 °C. This small outline transistor features a max VCE of 30V and fT of 100MHz, making it ideal for compact electronic designs.

.1 A

30 V

SEPARATE, 2 ELEMENTS

420

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.5 W

Not Qualified

Other Transistors

YES

TIN

FLAT

DUAL

AMPLIFIER

SILICON

100 MHz

EMX1DXV6T5G by Onsemi

EMX1DXV6T5G

Onsemi

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): .1 A; JESD-30 Code: R-PDSO-F6;

.1 A

50 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

MATTE TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

180 MHz

EMZ1DXV6T1G by Onsemi

EMZ1DXV6T1G

Onsemi

The Onsemi EMZ1DXV6T1G is a Small Signal BJT with NPN and PNP types in a plastic/epoxy package. It has 2 elements, 6 terminals, and operates as an amplifier with a max power dissipation of 0.5W. With a min hFE of 120 and max fT of 180MHz, it's suitable for applications requiring high-frequency amplification in compact designs.

.1 A

60 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.5 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

180 MHz

EMZ1DXV6T5G by Onsemi

EMZ1DXV6T5G

Onsemi

The Onsemi EMZ1DXV6T5G is a Small Signal BJT with NPN and PNP configurations. It has 2 elements, 6 terminals, and a max power dissipation of 0.5W. Ideal for amplifier applications, it operates at up to 150°C, with a max collector-emitter voltage of 60V and transition frequency of 180MHz.

.1 A

60 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.5 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

180 MHz

EMT1DXV6T5G by Onsemi

EMT1DXV6T5G

Onsemi

EMT1DXV6T5G by Onsemi is a PNP BJT with 2 elements, hFE of 120, and VCE of 60V. Ideal for amplifier applications, it has a max operating temp of 150 °C and transition frequency of 140MHz. This small outline transistor is surface mountable with matte tin finish.

.1 A

60 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

140 MHz

ZXTD2090E6TA by Diodes Incorporated

ZXTD2090E6TA

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 215 MHz; Maximum Power Dissipation (Abs): 1.7 W; Maximum Collector Current (IC): 1 A;

1 A

50 V

SEPARATE, 2 ELEMENTS

20

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.7 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

215 MHz

425 ns

150 ns

NSVEMT1DXV6T5G by Onsemi

NSVEMT1DXV6T5G

Onsemi

NSVEMT1DXV6T5G by Onsemi is a PNP BJT with 2 elements, ideal for amplifier applications. It features VCEsat of 0.5V, hFE of 120, and max IC of 0.1A. With a max operating temp of 150 °C and AEC-Q101 standard compliance, it offers high performance in small outline packages.

.1 A

50 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-F6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.5 W

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

140 MHz

.5 V

ZDT694QTA by Diodes Incorporated

ZDT694QTA

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR;

HIGH RELIABILITY

.5 A

120 V

SEPARATE, 2 ELEMENTS

150

R-PDSO-G8

e3

1

2

8

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

130 MHz

NMB2227AH by Nexperia

NMB2227AH

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 30;

.6 A

40 V

SEPARATE, 2 ELEMENTS

75

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

300 MHz

250 ns

35 ns

NMB2227AZ by Nexperia

NMB2227AZ

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Package Style (Meter): SMALL OUTLINE;

.6 A

40 V

SEPARATE, 2 ELEMENTS

75

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

300 MHz

250 ns

35 ns

BCM856BSF by Nexperia

BCM856BSF

Nexperia

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 175 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

.1 A

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

175 MHz

PBSS4350SSJ by Nexperia

PBSS4350SSJ

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 2.7 A; Maximum Collector-Emitter Voltage: 50 V; Terminal Form: GULL WING;

2.7 A

50 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-G8

e4

1

2

8

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

30

SWITCHING

SILICON

520 ns

104 ns

PBSS4160DSZ by Nexperia

PBSS4160DSZ

Nexperia

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 220 MHz; Maximum Collector Current (IC): 1 A; Reference Standard: AEC-Q101;

1 A

60 V

SEPARATE, 2 ELEMENTS

250

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

220 MHz

BC847BPN/ZLF by Nexperia

BC847BPN/ZLF

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 2;

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

e3

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

BC847BPN/ZLX by Nexperia

BC847BPN/ZLX

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

YES

Tin (Sn)

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

BC847BS/ZLX by Nexperia

BC847BS/ZLX

Nexperia

BC847BS/ZLX by Nexperia is a NPN BJT transistor with 2 elements, ideal for switching applications. It has a hFE of 200, Vce of 45V, and fT of 100MHz. With Gull Wing terminals and small outline package style, it's suitable for surface mount designs in various electronic circuits.

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

BC856S,125 by Nexperia

BC856S,125

Nexperia

BC856S,125 by Nexperia is a PNP BJT transistor with 2 elements for switching applications. It has a hFE of 110, Vce of 65V, and fT of 100MHz. This small outline package with Gull Wing terminals is ideal for surface mount designs requiring high-speed switching capabilities.

.1 A

65 V

SEPARATE, 2 ELEMENTS

110

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

PBSS5220PAPSX by Nexperia

PBSS5220PAPSX

Nexperia

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 95 MHz; Maximum Collector Current (IC): 2 A; Package Shape: SQUARE;

COLLECTOR

2 A

20 V

SEPARATE, 2 ELEMENTS

100

S-PDSO-N6

e3

1

2

6

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

95 MHz

BC847PNE6327BTSA1 by Infineon Technologies

BC847PNE6327BTSA1

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: GULL WING;

.1 A

45 V

SEPARATE, 2 ELEMENTS

110

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

250 MHz

BC847PNH6433XTMA1 by Infineon Technologies

BC847PNH6433XTMA1

Infineon Technologies

Infineon Technologies' BC847PNH6433XTMA1 is a small signal BJT transistor with NPN and PNP polarity. It has a max collector-emitter voltage of 45V, making it suitable for amplifier applications. With a min DC current gain of 200 and a nominal transition frequency of 250MHz, it offers high performance in a compact rectangular package.

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

YES

GULL WING

DUAL

AMPLIFIER

SILICON

250 MHz

BC847SE6327BTSA1 by Infineon Technologies

BC847SE6327BTSA1

Infineon Technologies

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Shape: RECTANGULAR;

.1 A

45 V

SEPARATE, 2 ELEMENTS

110

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

BC847SH6433XTMA1 by Infineon Technologies

BC847SH6433XTMA1

Infineon Technologies

Infineon BC847SH6433XTMA1 is a NPN BJT with 2 elements, hFE of 200, and VCE of 45V. Ideal for amplifier applications, it has a fT of 250MHz and IC max of 0.1A. This small outline transistor in gull wing package suits surface mount designs per AEC-Q101 standards.

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BC857SH6433XTMA1 by Infineon Technologies

BC857SH6433XTMA1

Infineon Technologies

BC857SH6433XTMA1 by Infineon: PNP BJT with hFE of 200, VCE of 45V, and fT of 250MHz. Ideal for amplifier applications due to its small outline package and high transition frequency. Suitable for surface mount designs with dual terminals in a rectangular shape.

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BCM846SE6327HTSA1 by Infineon Technologies

BCM846SE6327HTSA1

Infineon Technologies

BCM846SE6327HTSA1 by Infineon Technologies is a NPN BJT with 2 elements, hFE of 200. It's used as an amplifier in surface mount applications, featuring max VCE of 65V and IC of 0.1A. Ideal for high-frequency operations with fT of 250MHz and can withstand up to 150°C operating temperature.

.1 A

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

250 MHz

BC846PNH6727 by Infineon Technologies

BC846PNH6727

Infineon Technologies

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

.1 A

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BC846SH6727XTSA1 by Infineon Technologies

BC846SH6727XTSA1

Infineon Technologies

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON;

.1 A

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BC847PNH6727XTSA1 by Infineon Technologies

BC847PNH6727XTSA1

Infineon Technologies

Infineon's BC847PNH6727XTSA1 is a Small Signal BJT with NPN and PNP channels, ideal for amplifier applications. It features 200 min hFE, 45V VCE max, and 250MHz fT. The transistor comes in a small outline package with Gull Wing terminals, making it suitable for surface mount designs.

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BC847SH6727XTSA1 by Infineon Technologies

BC847SH6727XTSA1

Infineon Technologies

BC847SH6727XTSA1 by Infineon Technologies is a NPN BJT with 2 elements, hFE of 200. It has a VCE of 45V and IC of 0.1A, suitable for amplifier applications. This transistor is surface mountable, with Gull Wing terminals in a small outline package shape.

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BCM856SH6778 by Infineon Technologies

BCM856SH6778

Infineon Technologies

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

.1 A

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

250 MHz

BC846BPN-AU_R1_000A1 by Panjit International

BC846BPN-AU_R1_000A1

Panjit International

BC846BPN-AU_R1_000A1 by Panjit Int. is a Small Signal BJT with NPN/PNP polarity, 2 elements, and Gull Wing terminals. Ideal for amplifier applications, it has hFE of 200, VCE of 65V, and fT of 100MHz. AEC-Q101 compliant with temp range -55 to 150°C, it's a versatile choice for compact designs needing high gain and frequency performance.

.1 A

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN AND PNP

AEC-Q101

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz

MMDT4401Q-7-F by Diodes Incorporated

MMDT4401Q-7-F

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Additional Features: HIGH RELIABILITY;

HIGH RELIABILITY

.6 A

40 V

SEPARATE, 2 ELEMENTS

40

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

250 MHz

255 ns

35 ns

BC847QAPN,147 by Nexperia

BC847QAPN,147

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Terminal Form: NO LEAD;

COLLECTOR

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-N6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101; IEC-60134

YES

TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

100 MHz