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SEPARATE, 2 ELEMENTS Small Signal Bipolar Junction Transistors (BJT) 105

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BC857BSQ-7-F by Diodes Incorporated

BC857BSQ-7-F

Diodes Incorporated

Diodes Inc. BC857BSQ-7-F is a PNP BJT with 2 elements, ideal for switching applications. Features include max. collector-emitter voltage of 45V, max. collector current of 0.1A, and min. DC current gain of 220 (hFE). Package: Small Outline, Surface Mount with Gull Wing terminals.

HIGH RELIABILITY

.1 A

45 V

SEPARATE, 2 ELEMENTS

220

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

ZXTC6717MCQTA by Diodes Incorporated

ZXTC6717MCQTA

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Collector Current (IC): 4.5 A; Terminal Form: NO LEAD;

HIGH RELIABILITY

COLLECTOR

4.5 A

15 V

SEPARATE, 2 ELEMENTS

150

R-PDSO-N8

e4

1

2

8

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

120 MHz

ZXTC6718MCQTA by Diodes Incorporated

ZXTC6718MCQTA

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): 4.5 A; No. of Elements: 2;

HIGH RELIABILITY

COLLECTOR

4.5 A

20 V

SEPARATE, 2 ELEMENTS

100

R-PDSO-N8

e4

1

2

8

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

DUAL

30

SWITCHING

SILICON

140 MHz

ZXTC2045E6QTA by Diodes Incorporated

ZXTC2045E6QTA

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 265 MHz; Maximum Collector Current (IC): 1.5 A; No. of Elements: 2;

HIGH RELIABILITY

1.5 A

30 V

SEPARATE, 2 ELEMENTS

180

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

265 MHz

SMBTA06UPNE6327HTSA1 by Infineon Technologies

SMBTA06UPNE6327HTSA1

Infineon Technologies

SMBTA06UPNE6327HTSA1 by Infineon Technologies is a Small Signal BJT with NPN and PNP configuration, 2 elements, and Gull Wing terminals. It operates up to 150°C with a max voltage of 80V and max current of 0.5A. Ideal for applications requiring high DC gain (hFE), such as amplification in small outline packages.

.5 A

80 V

SEPARATE, 2 ELEMENTS

100

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

Not Qualified

YES

TIN

GULL WING

DUAL

SILICON

100 MHz

BC857SE6433HTMA1 by Infineon Technologies

BC857SE6433HTMA1

Infineon Technologies

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260;

.1 A

45 V

SEPARATE, 2 ELEMENTS

125

R-PDSO-G6

e3

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

40

SWITCHING

SILICON

250 MHz

SMBT3904PNH6327XTSA1 by Infineon Technologies

SMBT3904PNH6327XTSA1

Infineon Technologies

SMBT3904PNH6327XTSA1 by Infineon Technologies is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features a max collector-emitter voltage of 40V, hFE of 30, and fT of 250MHz. With a package style of small outline and Gull Wing terminals, it's suitable for surface mount designs in various electronic circuits.

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

AEC-Q101

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

300 ns

70 ns

SMBT3906UE6327HTSA1 by Infineon Technologies

SMBT3906UE6327HTSA1

Infineon Technologies

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Package Style (Meter): SMALL OUTLINE;

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

300 ns

70 ns

MMDT2907AQ-7-F by Diodes Incorporated

MMDT2907AQ-7-F

Diodes Incorporated

MMDT2907AQ-7-F by Diodes Incorporated is a PNP BJT with 2 elements, ideal for switching applications. It features VCEsat of 1.6V, hFE of 50, and IC of 0.6A. With a max operating temp of 150°C and fT of 200MHz, it's suitable for small outline packages in automotive electronics.

.6 A

8 pF

60 V

SEPARATE, 2 ELEMENTS

50

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

AEC-Q101; IATF 16949

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

200 MHz

100 ns

45 ns

1.6 V

IMX2T108 by ROHM

IMX2T108

ROHM

ROHM's IMX2T108 is a NPN BJT with 2 elements, ideal for amplifier applications. Features include VCEsat of 0.4V, hFE of 120, and fT of 180MHz. With a max operating temp of 150°C and Pdiss of 0.3W, it's suitable for small outline packages in surface mount designs.

.15 A

50 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-G6

e1

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

AMPLIFIER

SILICON

180 MHz

.4 V

IMX3T108 by ROHM

IMX3T108

ROHM

ROHM's IMX3T108 is a NPN BJT with 2 elements, ideal for amplifier applications. It features VCEsat of 0.4V, hFE of 120, and fT of 180MHz. With a max operating temp of 150°C and IC of 0.15A, it's suitable for small outline packages in surface mount configurations.

.15 A

50 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-G6

e1

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

TIN SILVER COPPER

GULL WING

DUAL

10

AMPLIFIER

SILICON

180 MHz

.4 V

UMX2NTR by ROHM

UMX2NTR

ROHM

ROHM UMX2NTR is a NPN BJT with 2 elements, ideal for amplifier applications. It has a VCEsat of 0.4V and hFE of 120. With a max operating temp of 150°C, it offers a transition frequency of 180MHz in a small outline package.

.15 A

50 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-G6

e2

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN COPPER

GULL WING

DUAL

10

AMPLIFIER

SILICON

180 MHz

.4 V

IMZ4T108 by ROHM

IMZ4T108

ROHM

ROHM's IMZ4T108 is a Small Signal BJT with NPN and PNP types, 2 separate elements, and Gull Wing terminals. It has a max power dissipation of 0.3W, hFE of 120, and can handle up to 32V collector-emitter voltage. Ideal for applications requiring high transition frequency (fT) of 250MHz in small outline packages.

.5 A

32 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-G6

e1

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.3 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN SILVER COPPER

GULL WING

DUAL

10

SILICON

250 MHz

VT6X1T2R by ROHM

VT6X1T2R

ROHM

ROHM's VT6X1T2R is a NPN BJT with 2 elements, ideal for switching applications. It has a max power dissipation of 0.15W, hFE of 120, and fT of 400MHz. With a max collector-emitter voltage of 20V and max collector current of 0.2A, it operates up to 150°C making it suitable for various electronic designs.

.2 A

20 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-F6

e2

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

DUAL

10

SWITCHING

SILICON

400 MHz

HBDM60V600W-7 by Diodes Incorporated

HBDM60V600W-7

Diodes Incorporated

Diodes Inc.'s HBDM60V600W-7 is a Small Signal BJT with NPN and PNP types. It has 2 elements, 6 terminals, and can handle up to 0.5A collector current at 65V. With a transition frequency of 100MHz, it's ideal for high-frequency applications in electronics requiring small outline packages.

.5 A

65 V

SEPARATE, 2 ELEMENTS

100

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

100 MHz

DMB2227A-7 by Diodes Incorporated

DMB2227A-7

Diodes Incorporated

DMB2227A-7 by Diodes Inc. is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It features 2 separate elements in a rectangular package with Gull Wing terminals. With a max operating temp of 150°C, it offers a transition frequency of 300 MHz and can handle up to 0.6A collector current.

.6 A

40 V

SEPARATE, 2 ELEMENTS

40

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.3 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

300 MHz

285 ns

35 ns

IMT17-7 by Diodes Incorporated

IMT17-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;

.5 A

50 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

200 MHz

MAT01AHZ by Analog Devices

MAT01AHZ

Analog Devices

MAT01AHZ by Analog Devices is a NPN BJT with 2 elements, VCEsat of 0.2V, and hFE of 500. Ideal for applications requiring high DC current gain and low collector-emitter voltage. With a max operating temp of 150 °C, it's suitable for circuits demanding precision and reliability.

LOW NOISE

SUBSTRATE

.025 A

45 V

SEPARATE, 2 ELEMENTS

500

TO-78

O-MBCY-W6

e4

2

6

150 Cel

METAL

ROUND

CYLINDRICAL

NPN

1.8 W

1.8 W

Not Qualified

Other Transistors

NO

NICKEL PALLADIUM GOLD

WIRE

BOTTOM

SILICON

450 MHz

.2 V

MAT01GHZ by Analog Devices

MAT01GHZ

Analog Devices

MAT01GHZ by Analog Devices is a NPN BJT with 2 elements, VCEsat of 0.25V, and hFE of 250. Ideal for applications requiring high frequency performance up to 450MHz, such as RF amplifiers or oscillators. With a max operating temperature of 150°C and collector-emitter voltage of 45V, it offers reliable performance in various electronic circuits.

LOW NOISE

SUBSTRATE

.025 A

45 V

SEPARATE, 2 ELEMENTS

250

TO-78

O-MBCY-W6

e4

2

6

150 Cel

METAL

ROUND

CYLINDRICAL

NPN

1.8 W

1.8 W

Not Qualified

Other Transistors

NO

NICKEL PALLADIUM GOLD

WIRE

BOTTOM

SILICON

450 MHz

.25 V

BC846BPN-TP by Micro Commercial Components

BC846BPN-TP

Micro Commercial Components

BC846BPN-TP by Micro Commercial Components is a Small Signal BJT with NPN and PNP configuration. It has hFE of 200, VCE of 65V, and fT of 100MHz. Ideal for applications requiring small outline packages, such as amplifiers and signal processing circuits.

.1 A

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

YES

Matte Tin (Sn)

GULL WING

DUAL

10

SILICON

100 MHz

MMDT3946-TP by Micro Commercial Components

MMDT3946-TP

Micro Commercial Components

MMDT3946-TP by Micro Commercial Components is a Small Signal BJT with NPN and PNP types. It has 2 elements, 6 terminals, and can handle up to 40V. Ideal for switching applications, it offers a transition frequency of 300MHz and operates at temperatures up to 150°C.

.2 A

40 V

SEPARATE, 2 ELEMENTS

100

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

MATTE TIN

GULL WING

DUAL

10

SWITCHING

SILICON

300 MHz

250 ns

70 ns

HN1B01FDW1T1 by Onsemi

HN1B01FDW1T1

Onsemi

HN1B01FDW1T1 by Onsemi is a small signal bipolar junction transistor (BJT) with NPN and PNP polarity. It has a max power dissipation of 0.38 W and is commonly used as an amplifier in various applications. This surface mount transistor has a rectangular package shape with gull wing terminals, making it suitable for compact designs.

.2 A

50 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

e0

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

NPN AND PNP

.38 W

Not Qualified

BIP General Purpose Small Signal

YES

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

AMPLIFIER

SILICON

MMDT3904-7 by Diodes Incorporated

MMDT3904-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .2 A;

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

250 ns

70 ns

MMDT3906-7 by Diodes Incorporated

MMDT3906-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.2 W

Not Qualified

Other Transistors

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

300 ns

70 ns

DMMT3904W-7 by Diodes Incorporated

DMMT3904W-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Turn On Time (ton): 70 ns;

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

300 MHz

250 ns

70 ns

DMMT3906W-7 by Diodes Incorporated

DMMT3906W-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Terminal Form: GULL WING;

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

250 MHz

300 ns

70 ns

ZXTD6717E6QTA by Diodes Incorporated

ZXTD6717E6QTA

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 180 MHz; Maximum Collector Current (IC): 1.5 A; Package Body Material: PLASTIC/EPOXY;

HIGH RELIABILITY

1.5 A

15 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

180 MHz

MMDT2222A-7 by Diodes Incorporated

MMDT2222A-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Maximum Turn Off Time (toff): 285 ns;

.6 A

40 V

SEPARATE, 2 ELEMENTS

40

R-PDSO-G6

e0

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SILICON

300 MHz

285 ns

35 ns

MMDT2907A-7 by Diodes Incorporated

MMDT2907A-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Transistor Application: SWITCHING;

.6 A

60 V

SEPARATE, 2 ELEMENTS

50

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

100 ns

45 ns

MMDT3946-7 by Diodes Incorporated

MMDT3946-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.2 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

250 ns

70 ns

MMDT4401-7 by Diodes Incorporated

MMDT4401-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Collector-Emitter Voltage: 40 V;

.6 A

40 V

SEPARATE, 2 ELEMENTS

40

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

255 ns

35 ns

MMDT4124-7 by Diodes Incorporated

MMDT4124-7

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL;

.2 A

25 V

SEPARATE, 2 ELEMENTS

60

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

MMDT5551-7 by Diodes Incorporated

MMDT5551-7

Diodes Incorporated

MMDT5551-7 by Diodes Inc. is a NPN BJT with 2 elements, ideal for switching applications. It has a min hFE of 30 and max VCE of 160V. With a fT of 100MHz, this transistor comes in a small outline package suitable for surface mount assembly.

.2 A

160 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMDT5401-7 by Diodes Incorporated

MMDT5401-7

Diodes Incorporated

MMDT5401-7 by Diodes Inc. is a PNP BJT transistor with 2 elements, ideal for switching applications. It has a hFE of 50, Vce of 150V, and fT of 100MHz. This surface-mount device in a small outline package features Gull Wing terminals and silicon material for efficient performance.

.2 A

150 V

SEPARATE, 2 ELEMENTS

50

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

MMDT5451-7 by Diodes Incorporated

MMDT5451-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .2 A; Package Body Material: PLASTIC/EPOXY;

.2 A

160 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-G6

e3

1

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

Not Qualified

YES

Matte Tin (Sn)

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

MMDT4413-7 by Diodes Incorporated

MMDT4413-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Turn On Time (ton): 35 ns;

.6 A

40 V

SEPARATE, 2 ELEMENTS

40

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

250 MHz

255 ns

35 ns

MMDT4403-7 by Diodes Incorporated

MMDT4403-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 6;

.6 A

40 V

SEPARATE, 2 ELEMENTS

20

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

200 MHz

255 ns

35 ns

BC847BPDXV6T1 by Onsemi

BC847BPDXV6T1

Onsemi

BC847BPDXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP types. It has 2 elements, 6 terminals, and max power dissipation of 0.5W. Ideal for amplifier applications, it operates up to 150 °C, with max collector-emitter voltage of 45V and transition frequency of 100MHz.

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.5 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

100 MHz

BC858CDXV6T5 by Onsemi

BC858CDXV6T5

Onsemi

BC858CDXV6T5 by Onsemi is a PNP BJT transistor with 2 elements, suitable for amplifier applications. It has a max power dissipation of 0.5W, hFE of 420, and operates up to 150 °C. This small outline transistor features a max VCE of 30V and fT of 100MHz, making it ideal for compact electronic designs requiring high-frequency amplification.

.1 A

30 V

SEPARATE, 2 ELEMENTS

420

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.5 W

Not Qualified

Other Transistors

YES

TIN

FLAT

DUAL

AMPLIFIER

SILICON

100 MHz

NST3904DXV6T5 by Onsemi

NST3904DXV6T5

Onsemi

The Onsemi NST3904DXV6T5 is a NPN BJT with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.5W, hFE of 30, and operates up to 150 °C. This small outline transistor offers a max collector-emitter voltage of 40V and transition frequency of 300MHz.

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.5 W

Not Qualified

Other Transistors

YES

TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

300 MHz

250 ns

70 ns

NST3946DXV6T1 by Onsemi

NST3946DXV6T1

Onsemi

NST3946DXV6T1 by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for amplifier applications. It features 2 separate elements in a small outline package with 6 terminals. With max power dissipation of 0.5W, max collector-emitter voltage of 40V, and transition frequency of 300MHz, it offers efficient performance in various electronic circuits.

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.5 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

FLAT

DUAL

AMPLIFIER

SILICON

300 MHz

250 ns

70 ns

NST3946DXV6T5 by Onsemi

NST3946DXV6T5

Onsemi

NST3946DXV6T5 by Onsemi is a Small Signal BJT with NPN and PNP channels. It has 2 elements, 6 terminals, and max power dissipation of 0.5W. Ideal for amplifier applications, it operates at up to 150 °C with a max collector-emitter voltage of 40V and transition frequency of 300MHz.

.2 A

40 V

SEPARATE, 2 ELEMENTS

30

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

.5 W

Not Qualified

BIP General Purpose Small Signal

YES

TIN

FLAT

DUAL

30

AMPLIFIER

SILICON

300 MHz

250 ns

70 ns

IMT4-7-F by Diodes Incorporated

IMT4-7-F

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 140 MHz; Maximum Collector Current (IC): .05 A; JESD-30 Code: R-PDSO-G6;

.05 A

120 V

SEPARATE, 2 ELEMENTS

180

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

SILICON

140 MHz

IMX8-7-F by Diodes Incorporated

IMX8-7-F

Diodes Incorporated

Diodes Inc.'s IMX8-7-F is a NPN BJT with 2 elements, hFE of 180, and VCE of 120V. Ideal for small signal applications, it has a max power dissipation of 0.3W and transition frequency of 140MHz. With Gull Wing terminals and matte tin finish, it operates up to 150°C in a small outline package.

.05 A

120 V

SEPARATE, 2 ELEMENTS

180

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

140 MHz

MMDT2227-7 by Diodes Incorporated

MMDT2227-7

Diodes Incorporated

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON;

.6 A

40 V

SEPARATE, 2 ELEMENTS

35

R-PDSO-G6

e0

2

6

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

Not Qualified

YES

TIN LEAD

GULL WING

DUAL

SWITCHING

SILICON

300 MHz

35 ns

MMDT4124-7-F by Diodes Incorporated

MMDT4124-7-F

Diodes Incorporated

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;

HIGH RELIABILITY

.2 A

25 V

SEPARATE, 2 ELEMENTS

60

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

300 MHz

MMDT4126-7-F by Diodes Incorporated

MMDT4126-7-F

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;

.2 A

25 V

SEPARATE, 2 ELEMENTS

60

R-PDSO-G6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.2 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

250 MHz

BC847BV-7 by Diodes Incorporated

BC847BV-7

Diodes Incorporated

BC847BV-7 by Diodes Inc. is a NPN BJT with 2 elements, hFE of 200, and VCE of 45V. Ideal for small signal applications in electronics due to its high transition frequency of 100MHz, low power dissipation of 0.15W, and compact small outline package design. Suitable for surface mount PCBs requiring dual terminal configuration with matte tin finish.

.1 A

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-F6

e3

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

MATTE TIN

FLAT

DUAL

30

SILICON

100 MHz