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SEPARATE, 2 ELEMENTS Small Signal Bipolar Junction Transistors (BJT) 105

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
HN2C01FU-GR(T5L,F) by Toshiba

HN2C01FU-GR(T5L,F)

Toshiba

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .15 A;

.15 A

3.5 pF

50 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

.2 W

YES

GULL WING

DUAL

AMPLIFIER

SILICON

80 MHz

.25 V

HN2C01FU-Y(TE85L,F by Toshiba

HN2C01FU-Y(TE85L,F

Toshiba

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .15 A;

.15 A

3.5 pF

50 V

SEPARATE, 2 ELEMENTS

120

R-PDSO-G6

2

6

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

.2 W

YES

GULL WING

DUAL

AMPLIFIER

SILICON

80 MHz

.25 V

MMDT2907VQ-7 by Diodes Incorporated

MMDT2907VQ-7

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .6 A;

.6 A

8 pF

60 V

SEPARATE, 2 ELEMENTS

50

R-PDSO-F6

e3

1

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.15 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

Matte Tin (Sn)

FLAT

DUAL

SILICON

200 MHz

100 ns

45 ns

1.6 V

BC857BS-QF by Nexperia

BC857BS-QF

Nexperia

BC857BS-QF by Nexperia is a PNP BJT transistor with VCEsat of 0.4V, hFE of 200, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and collector-emitter voltage of 45V. Package style is small outline with Gull Wing terminals.

.1 A

2.2 pF

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

1

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

.4 V

PBSS2515YPN-QX by Nexperia

PBSS2515YPN-QX

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 420 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;

.5 A

6 pF

15 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

420 MHz

.25 V

BC856S-QF by Nexperia

BC856S-QF

Nexperia

BC856S-QF by Nexperia is a PNP BJT transistor with VCEsat of 0.3V, hFE of 110, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 100MHz. This small outline transistor features a Gull Wing terminal form in a rectangular package shape.

.1 A

2.5 pF

65 V

SEPARATE, 2 ELEMENTS

110

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.4 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

BC847BPN-QZ by Nexperia

BC847BPN-QZ

Nexperia

BC847BPN-QZ by Nexperia is a Small Signal BJT with NPN and PNP channels. It has 2 separate elements, Gull Wing terminals, and operates at -65 to 150°C. Ideal for switching applications, it offers VCEsat of 0.3V, hFE of 200, and fT of 100MHz in a small outline package.

.1 A

2.2 pF

45 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.4 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

BC856S-QH by Nexperia

BC856S-QH

Nexperia

BC856S-QH by Nexperia is a PNP BJT transistor with VCEsat of 0.3V, hFE of 110, and IC of 0.1A. Ideal for switching applications, it has a max operating temp of 150°C and fT of 100MHz. With a compact small outline package style, it features dual terminals in gull wing form.

.1 A

2.5 pF

65 V

SEPARATE, 2 ELEMENTS

110

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

.4 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V

BC846BS-QF by Nexperia

BC846BS-QF

Nexperia

BC846BS-QF by Nexperia is a NPN BJT for switching applications. Features include VCEsat of 0.3V, hFE of 200, and IC of 0.1A. With a max operating temp of 150°C, it has a fT of 100MHz. Ideal for compact designs requiring high-speed switching capabilities.

.1 A

1.9 pF

65 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

.3 V