Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BUK6240-75C,118
NXP Semiconductors
NXP Semiconductors' BUK6240-75C,118 is an N-channel Power FET with 22A max drain current and 60W power dissipation. Ideal for applications requiring high-power handling in enhancement mode operation, such as power supplies and motor control systems.
SINGLE
22 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
175 Cel
N-CHANNEL
60 W
FET General Purpose Power
YES
PSMN5R6-100XS,127
PSMN5R6-100XS,127 by NXP Semiconductors is an N-channel enhancement mode FET ideal for power applications. It supports a max drain current of 61 A and power dissipation of 60 W, operating up to 175 °C. Perfect for efficient energy management in various electronic devices.
61 A
NO
STL65DN3LLH5
STMicroelectronics
STL65DN3LLH5 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 76A IDM, and 0.0079 ohm RDS(on). Ideal for SWITCHING applications in small outline packages with 60W power dissipation.
270 mJ
DRAIN
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
30 V
65 A
19 A
.0079 ohm
R-PDSO-N6
e3
2
6
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
76 A
Matte Tin (Sn)
NO LEAD
DUAL
30
SWITCHING
SILICON
STL100N1VH5
STL100N1VH5 by STMicroelectronics is a N-CHANNEL FET with 12V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 60W and operates in ENHANCEMENT MODE. With a package style of SMALL OUTLINE, it can withstand temperatures from -55 to 150 °C.
300 mJ
SINGLE WITH BUILT-IN DIODE
12 V
100 A
.004 ohm
240 pF
R-PDSO-F5
5
-55 Cel
NOT SPECIFIED
FET General Purpose Powers
FLAT
NVD4856NT4G
Onsemi
NVD4856NT4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 179A Max Pulsed Drain Current, and 0.0068 ohm Max Drain-Source Resistance. Ideal for high-power switching circuits in automotive and industrial electronics due to its 60W Power Dissipation capability.
180.5 mJ
25 V
89 A
13.3 A
.0068 ohm
R-PSSO-G2
179 A
AEC-Q101
TIN
GULL WING
STP9NM40N
STP9NM40N by STMicroelectronics is a N-CHANNEL FET with 400V DS Breakdown Voltage, ideal for SWITCHING applications. It features 22.4A IDM, 140mJ EAS, and 0.79 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 60W and can handle up to 150 °C temperature.
BULK: 2500
140 mJ
400 V
5.6 A
.79 ohm
2.3 pF
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
22.4 A
THROUGH-HOLE
STP1N105K3
STP1N105K3 by STMicroelectronics is a N-CHANNEL FET with 1.4A max drain current and 60W max power dissipation. Ideal for applications requiring high efficiency power management in temperatures up to 150 °C.
1.4 A
STP9N60M2
STP9N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 22A IDM and 105mJ EAS, operating in enhancement mode. With 0.78 ohm RDS(on) and 60W power dissipation, it's suitable for high-power circuits requiring efficient performance.
105 mJ
600 V
5.5 A
.78 ohm
.68 pF
STU6N60M2
STU6N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 18A IDM and 86mJ EAS, operating in enhancement mode. With a max power dissipation of 60W and -55 to 150 °C operating temperature range, it offers reliable performance in various industrial settings.
86 mJ
4.5 A
1.2 ohm
.7 pF
TO-251
R-PSIP-T3
IN-LINE
18 A
MATTE TIN
STP12PF06
STP12PF06 by STMicroelectronics is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 48A IDM, 200mJ EAS, and 0.2 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 60W at 175°C.
200 mJ
60 V
12 A
.2 ohm
P-CHANNEL
48 A
Not Qualified
Other Transistors
STL60N3LLH5
STL60N3LLH5 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 68A IDM, and 0.0095 ohm RDS(on). Ideal for SWITCHING applications, it features a built-in diode, operates in ENHANCEMENT MODE, and has a max power dissipation of 60W.
120 mJ
60 A
17 A
.0095 ohm
R-PDSO-N5
68 A
STL75N3LLZH5
STL75N3LLZH5 by STMicroelectronics is a N-CHANNEL FET with 30V DS breakdown voltage, 76A IDM, and 0.0078 ohm RDS(on). Ideal for SWITCHING applications due to its 60W power dissipation, ENHANCEMENT MODE operation, and DUAL terminal position.
75 A
.0078 ohm
STD75N3LLH6
STD75N3LLH6 by STMicroelectronics is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 75A Drain Current. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 60W. Ideal for high-power switching circuits requiring efficient performance.
.008 ohm
TO-252
300 A
STU75N3LLH6
STU75N3LLH6 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 75 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
.0084 ohm
STD50N03L-1
STD50N03L-1 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 40 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in various electronic devices.
230 mJ
ISOLATED
40 A
.019 ohm
TO-251AB
160 A
STD50N03L
STD50N03L by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a max drain current of 40 A and a breakdown voltage of 30 V. It offers low on-resistance at 0.019 Ω and operates up to 175 °C. This compact FET is suitable for high-efficiency power management.
NTD4856N-1G
NTD4856N-1G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 25V DS Breakdown Voltage, 179A Pulsed Drain Current, and 0.0068 ohm Drain-Source Resistance. Ideal for high-power switching circuits in various electronic devices.
NTD4856N-35G
NTD4856N-35G by Onsemi is a Power FET with N-CHANNEL polarity, ideal for SWITCHING applications. It features a 25V DS Breakdown Voltage, 179A Pulsed Drain Current, and 0.0068 ohm Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 60W at 175 °C.
STD60N3LH5
STD60N3LH5 by STMicroelectronics is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 48A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 192A Pulsed Drain Current, and 0.0114 ohm On Resistance. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 60W and can withstand temperatures up to 175°C.
ULTRA-LOW RESISTANCE
160 mJ
.0114 ohm
192 A
Matte Tin (Sn) - annealed
STU60N3LH5
STU60N3LH5 by STMicroelectronics is an N-channel FET ideal for switching applications. It features a max drain current of 48 A, a breakdown voltage of 30 V, and operates at temperatures from -55 °C to 175°C. Its compact design ensures efficient power management in various electronic devices.
STD70N2LH5
STD70N2LH5 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 48 A, a breakdown voltage of 25 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
.01 ohm
STL75NH3LL
STL75NH3LL by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 75 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in modern electronics.
LOW THRESHOLD
20 A
.0075 ohm
80 A
NTD20N06T4
NTD20N06T4 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 60V DS Breakdown Voltage, 20A Drain Current, and 0.046 ohm On Resistance. This MOSFET operates in ENHANCEMENT MODE with a max power dissipation of 60W, making it ideal for high-power switching circuits.
170 mJ
.046 ohm
e0
235
TIN LEAD
STP14NF10
STP14NF10 by STMicroelectronics is an N-channel FET designed for switching applications, featuring a max drain current of 15 A and a breakdown voltage of 100 V. It operates in enhancement mode with a low on-resistance of 0.13 Ω. Ideal for high-efficiency power management solutions.
70 mJ
100 V
15 A
.13 ohm
NTB22N06LT4
NTB22N06LT4 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 66A IDM, and 0.065 ohm RDS. Ideal for SWITCHING applications due to its 175 °C Max Temp and 72mJ EAS rating. Features GULL WING terminals in a SMALL OUTLINE package style.
72 mJ
.065 ohm
66 A
NTB22N06T4
NTB22N06T4 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 66A IDM, and 0.06 ohm RDS. Ideal for SWITCHING applications, it features a built-in DIODE and operates in ENHANCEMENT MODE. This PLASTIC/EPOXY transistor has a max power dissipation of 60W and can withstand temperatures up to 175 °C.
.06 ohm
NTP22N06L
NTP22N06L by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 66A IDM, and 0.065 ohm RDS. Ideal for SWITCHING applications due to its 175 °C Max Temp and 72 mJ EAS rating. Package: PLASTIC/EPOXY, RECTANGULAR shape with THROUGH-HOLE terminals.
STP14NF12
STP14NF12 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 14 A, a breakdown voltage of 120 V, and operates at up to 175 °C. Ideal for power management in various electronic devices.
60 mJ
120 V
14 A
.18 ohm
56 A
STD50NH02LT4
STD50NH02LT4 by STMicroelectronics is a high-performance N-channel FET designed for efficient switching applications. It features a max drain current of 50 A, low on-resistance of 0.0105 Ω, and operates up to 175 °C. Ideal for power management in compact electronic devices.
280 mJ
24 V
50 A
.0105 ohm
TO-252AA
200 A
STD50NH02L-1
STD50NH02L-1 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 50 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance with low on-resistance.
STB60NH02LT4
STB60NH02LT4 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 60 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for high-efficiency power management in compact designs.
TO-263AB
240 A
STD55NH2LLT4
STD55NH2LLT4 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 55 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
600 mJ
55 A
.0135 ohm
NTD20N06G
NTD20N06G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 20A Max ID, and 0.046 ohm Max RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max power dissipation of 60W and can handle up to 60A IDM.
NTD20N06-1G
NTD20N06-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 20A Drain Current, and 0.046 ohm On Resistance. Ideal for switching applications, it features an Enhancement Mode operation and a built-in diode in a rectangular package with through-hole terminals.
STP60N3LH5
STP60N3LH5 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 48 A and a breakdown voltage of 30 V. It operates in enhancement mode with a power dissipation of up to 60 W. This robust transistor ensures efficient performance in demanding environments.
STP20NF06L
STP20NF06L by STMicroelectronics is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 80A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and 0.085 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 60W at 175°C.
.085 ohm
STP20NF06
STP20NF06 from STMicroelectronics is an N-channel FET ideal for switching applications. It features a max drain current of 20 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Its compact design ensures efficient performance in various electronic circuits.
.07 ohm
BSC079N03SG
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Additional Features: AVALANCHE RATED, LOGIC LEVEL COMPATIBLE; No. of Elements: 1;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
14.6 A
.0116 ohm
R-PDSO-F8
8
NTD20N06LG
NTD20N06LG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 20A Drain Current, and 0.048 ohm On Resistance. Ideal for SWITCHING applications, this N-CHANNEL transistor operates in ENHANCEMENT MODE with a max power dissipation of 60W.
128 mJ
.048 ohm
STD70N02L
STD70N02L by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.
NTD20N06L-1G
NTD20N06L-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 20A Drain Current, and 0.048 ohm On Resistance. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it offers high performance in various power management systems.
STL60NH3LL
STL60NH3LL by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 30 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in surface mount designs.
150 mJ
30 A
16 A
R-XDSO-N5
UNSPECIFIED
64 A
STD55N4F5
STD55N4F5 by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max drain current of 55 A, a breakdown voltage of 40 V, and operates at up to 175 °C. Ideal for high-performance power management in compact designs.
100 mJ
40 V
.0085 ohm
220 A
STL90N3LLH6
STL90N3LLH6 by STMicroelectronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 96A IDM, and 0.0073 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 60W power dissipation. This RECTANGULAR package has DUAL terminals and can withstand up to 150°C operating temperature.
90 A
24 A
.0073 ohm
96 A
STU75N3LLH6-S
STU75N3LLH6-S by STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max drain current of 75 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for high-performance power management in various electronic devices.
BSC072N025SG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Case Connection: DRAIN; Terminal Form: FLAT;
.0072 ohm
STL80N3LLH6
STL80N3LLH6 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 30 V, and operates at up to 150 °C. Ideal for compact power management in modern electronics.
21 A
.0076 ohm
84 A
STP7N65M2
STP7N65M2 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 20A pulsed drain current, and operates efficiently at temperatures up to 150 °C. Ideal for high-voltage power management solutions.
103 mJ
650 V
5 A
1.15 ohm
.8 pF
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