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60 W Power Field Effect Transistors (FET) 55

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STU9N65M2 by STMicroelectronics

STU9N65M2

STMicroelectronics

STU9N65M2 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 650V breakdown voltage and 20A max pulsed drain current. It operates in enhancement mode with a low on-resistance of 0.9Ω. This versatile transistor supports high power dissipation up to 60W.

105 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

5 A

.9 ohm

METAL-OXIDE SEMICONDUCTOR

.9 pF

TO-251

R-PSIP-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

60 W

20 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STL86N3LLH6AG by STMicroelectronics

STL86N3LLH6AG

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Drain-Source On Resistance: .0076 ohm; Maximum Drain Current (Abs) (ID): 80 A;

SINGLE

30 V

80 A

80 A

.0076 ohm

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

60 W

FET General Purpose Power

YES

NOT SPECIFIED

NVATS5A107PLZT4G by Onsemi

NVATS5A107PLZT4G

Onsemi

NVATS5A107PLZT4G by Onsemi is a P-CHANNEL FET with 40V DS Breakdown Voltage and 165A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.017 ohm Drain-Source Resistance, and operates in ENHANCEMENT MODE. Suitable for high-power systems requiring efficient switching capabilities.

80 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

55 A

55 A

.017 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e6

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

60 W

165 A

AEC-Q101

YES

TIN BISMUTH

GULL WING

SINGLE

30

SWITCHING

SILICON

NVATS4A103PZT4G by Onsemi

NVATS4A103PZT4G

Onsemi

NVATS4A103PZT4G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 180A IDM and 0.013 ohm RDS(ON), suitable for high-power operations. With a compact SMALL OUTLINE package and -55 to 175 °C operating range, it meets AEC-Q101 standards for automotive use.

57 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

60 A

60 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e6

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

60 W

180 A

AEC-Q101

YES

TIN BISMUTH

GULL WING

SINGLE

30

SWITCHING

SILICON

NTDV20N06T4G-VF01 by Onsemi

NTDV20N06T4G-VF01

Onsemi

NTDV20N06T4G-VF01 by Onsemi is a Power FET with 60V DS Breakdown Voltage, 20A Drain Current, and 0.046 ohm On Resistance. Ideal for switching applications in automotive electronics due to its AEC-Q101 standard compliance and high power dissipation of 60W.

170 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

20 A

20 A

.046 ohm

METAL-OXIDE SEMICONDUCTOR

120 pF

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

60 W

60 W

60 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

140 ns

140 ns

DMPH4025SFVWQ-7 by Diodes Incorporated

DMPH4025SFVWQ-7

Diodes Incorporated

DMPH4025SFVWQ-7 by Diodes Inc. is a P-CHANNEL FET with 40V DS Breakdown Voltage, 80A IDM, and 0.025 ohm RDS(on). Ideal for SWITCHING applications in automotive (AEC-Q101) due to its 60W power dissipation, -55 to 175 °C operating range, and METAL-OXIDE SEMICONDUCTOR technology.

HIGH RELIABILITY

82 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

40 A

40 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

151 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

60 W

80 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

NVD4856NT4G-VF01 by Onsemi

NVD4856NT4G-VF01

Onsemi

NVD4856NT4G-VF01 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a Max Pulsed Drain Current of 179A, Avalanche Energy Rating of 180.5mJ, and Max Power Dissipation of 60W. Ideal for high-power switching circuits in automotive and industrial electronics due to its robust design and performance capabilities.

180.5 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

89 A

89 A

.0068 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

60 W

179 A

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON