Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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2SK2719(F)
Toshiba
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (ID): 3 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SINGLE
3 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
150 Cel
N-CHANNEL
125 W
FET General Purpose Power
NO
2SK2744(F)
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
45 A
2SK3388(TE24L,Q)
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Drain Current (ID): 20 A; Maximum Drain Current (Abs) (ID): 20 A;
20 A
YES
VNP49N04-E
STMicroelectronics
VNP49N04-E by STMicroelectronics is an N-CHANNEL power FET with a max drain current of 68A and a max power dissipation of 125W. It operates in enhancement mode and is suitable for applications requiring high current handling capabilities, such as motor control or power supply systems.
68 A
e3
Matte Tin (Sn)
FDD14AN06LA0_F085
Fairchild Semiconductor
Fairchild Semiconductor's FDD14AN06LA0_F085 is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 9.5A Drain Current. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has an EAS of 55mJ and can handle up to 125W power dissipation at temperatures ranging from -55°C to 175°C.
55 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
60 V
9.5 A
.0116 ohm
TO-252AA
R-PSSO-G2
2
175 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
Not Qualified
AEC-Q101
MATTE TIN
GULL WING
30
SWITCHING
SILICON
STB23NM50N
STB23NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, 68A IDM, and 0.19 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at up to 150 °C. Package style is SMALL OUTLINE with GULL WING terminals.
254 mJ
500 V
17 A
.19 ohm
TO-263AB
245
Matte Tin (Sn) - annealed
STP23NM50N
STP23NM50N by STMicroelectronics is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 254mJ EAS, and 0.19 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 125W at 150 °C.
TO-220AB
R-PSFM-T3
3
FLANGE MOUNT
THROUGH-HOLE
NTMFS5830NLT1G
Onsemi
NTMFS5830NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 0.0036 ohm max RDS(on). It is used in applications requiring high power dissipation up to 125W, such as power supplies and motor control systems.
361 mJ
40 V
172 A
28 A
.0036 ohm
R-PDSO-F5
5
NOT SPECIFIED
690 A
Tin (Sn)
FLAT
DUAL
2SK3510-Z-E1-AZ
Renesas Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 83 A;
83 A
IPI70N10S3L12AKSA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Transistor Element Material: SILICON; Maximum Operating Temperature: 175 Cel;
LOGIC LEVEL COMPATIBLE
154 mJ
100 V
70 A
.0123 ohm
TO-262AA
R-PSIP-T3
IN-LINE
280 A
TIN
IPP70N10S3L12AKSA1
IPP70N10S3L12AKSA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage, 280A IDM, and 0.0123 ohm RDS(on). Ideal for power applications requiring high drain current handling and low on-resistance. Suitable for use in power supplies, motor control, and automotive systems due to its robust design and high power dissipation capability.
2SK3479-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
NTMFS4H01NT1G
NTMFS4H01NT1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage, 568A IDM, and 0.00097 ohm RDS(on). Ideal for SWITCHING applications due to its 505mJ EAS rating. It comes in a PLASTIC/EPOXY package with DUAL terminals and operates at up to 150 °C.
505 mJ
25 V
54 A
.00097 ohm
212 pF
568 A
NTMFS4H01NT3G
NTMFS4H01NT3G by Onsemi is a N-CHANNEL FET with 334A ID, 125W power dissipation, and 150 °C max operating temp. Ideal for high-power applications requiring efficient switching in surface-mount configurations.
334 A
NTMFS4H01NFT1G
NTMFS4H01NFT1G by Onsemi is a N-CHANNEL FET with 334A max drain current and 125W power dissipation. Ideal for high-power applications, it operates at up to 150 °C and features surface mount configuration for efficient heat dissipation.
NTMFS4H01NFT3G
NTMFS4H01NFT3G by Onsemi is a N-CHANNEL FET with 334A ID, 125W power dissipation, and 150 °C max operating temp. Ideal for high-power applications requiring efficient switching and control in surface-mount configurations.
STP19NB20
STMicroelectronics STP19NB20 is a N-CHANNEL FET with 200V DS breakdown voltage, ideal for switching applications. It features 76A max pulsed drain current and 0.18 ohm max drain-source resistance. With a package style of flange mount, it operates in enhancement mode at up to 150 °C.
580 mJ
200 V
19 A
.18 ohm
76 A
VNV35N07
VNV35N07 by STMicroelectronics is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.035 ohm Max RDS. It operates in Enhancement Mode, has 10 terminals, and can handle up to 125W power dissipation. Ideal for applications requiring high power handling in compact spaces like automotive electronics.
COMPLEX
.035 ohm
R-PDSO-G10
10
250
1350 ns
800 ns
VNB35N07
VNB35N07 by STMicroelectronics is an N-channel Power FET with 60V DS breakdown voltage, 0.035 ohm RDS(on), and 125W power dissipation. Ideal for enhancement mode operation in applications requiring high efficiency and fast switching such as power supplies and motor control systems.
TO-263
STP4NB100
STP4NB100 by STMicroelectronics is a N-CHANNEL FET with 1000V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 15.2A IDM, 360mJ EAS, and 125W Max Power Dissipation. Suitable for high-power ENHANCEMENT MODE operations in various electronic systems.
360 mJ
1000 V
3.8 A
4.4 ohm
15.2 A
STP7NB60
STP7NB60 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage and 28.8A pulsed drain current, ideal for switching applications. It features a single configuration with built-in diode, operating in enhancement mode at max 150 °C temperature. With 1.2 ohm RDS(on) and 125W power dissipation, it offers reliable performance in various power electronics designs.
AVALANCHE RATED
600 V
7.2 A
1.2 ohm
21 pF
28.8 A
39 ns
STP6NC60
STP6NC60 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 6A max drain current, and 125W power dissipation. Ideal for high-efficiency circuits in various electronic devices.
320 mJ
6 A
24 A
SPD30N06S2-15
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; No. of Terminals: 2; Package Style (Meter): SMALL OUTLINE;
240 mJ
55 V
30 A
.0147 ohm
TO-252
e0
120 A
TIN LEAD
SPD30N06S2L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Terminal Finish: TIN LEAD; Package Shape: RECTANGULAR;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
.017 ohm
SPD30N08S2-22
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Pulsed Drain Current (IDM): 120 A; Maximum Drain-Source On Resistance: .0215 ohm;
75 V
.0215 ohm
SPD30N08S2L-21
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PSSO-G2;
.026 ohm
SPD30P06P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Drain-Source On Resistance: .075 ohm; Qualification: Not Qualified;
250 mJ
.075 ohm
P-CHANNEL
Other Transistors
SPU30P06P
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 60 V;
TO-251
STW22NM60N
STW22NM60N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 16A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
300 mJ
16 A
.22 ohm
TO-247
64 A
STW30NF20
STW30NF20 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 30 A, a breakdown voltage of 200 V, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
140 mJ
STI22NM60N
STI22NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 16A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
VNV35N0713TR
VNV35N0713TR by STMicroelectronics is an N-channel MOSFET designed for efficient power management. It features a max DS breakdown voltage of 60V, power dissipation of 125W, and low on-resistance of 0.035Ω, making it ideal for high-performance applications. Its compact SO package ensures easy surface mounting in various electronic devices.
VNB35N0713TR
VNB35N0713TR from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a max power dissipation of 125 W, a breakdown voltage of 60 V, and an on-resistance of just 0.035 Ω. Ideal for compact electronic devices, it ensures reliable performance in surface mount configurations.
IRF7769L2TR1PBF
International Rectifier
IRF7769L2TR1PBF by International Rectifier is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 500A IDM, 260mJ EAS, and 0.0035 ohm RDS(on). Operates in ENHANCEMENT MODE with max temp of 175°C.
260 mJ
395 A
.0035 ohm
R-XBCC-N9
e1
9
UNSPECIFIED
CHIP CARRIER
500 A
TIN SILVER COPPER
NO LEAD
BOTTOM
STB16NM50N
STB16NM50N from STMicroelectronics is a powerful N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 15A max drain current, and operates at up to 150 °C. Ideal for high-performance power management in compact designs.
470 mJ
15 A
.26 ohm
60 A
STI16NM50N
STI16NM50N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 500V breakdown voltage, 15A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
40
STP16NM50N
STP16NM50N from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 500V breakdown voltage, 60A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STW16NM50N
STW16NM50N by STMicroelectronics is an N-channel FET ideal for switching applications. It features a 500V breakdown voltage, 15A max drain current, and operates at up to 150 °C. Its robust design ensures reliability in high-power circuits.
e3/e1
MATTE TIN/TIN SILVER COPPER
STB15NM60N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 14 A;
14 A
.299 ohm
56 A
STI15NM60N
STI15NM60N by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 14A max drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
STP11NM65N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; JESD-30 Code: R-PSFM-T3; Package Style (Meter): FLANGE MOUNT;
650 V
12 A
.38 ohm
48 A
STP15NM60N
STP15NM60N from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 14A max drain current, and 125W power dissipation. Ideal for high-efficiency power management in various electronic devices.
STW15NM60N
STW15NM60N by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 600V breakdown voltage and 14A max drain current. It offers a low on-resistance of 0.299Ω and operates at up to 150 °C. Its robust design ensures reliable performance in demanding environments.
VNB35N07-E
STMicroelectronics VNB35N07-E is a N-CHANNEL FET with 60V DS Breakdown Voltage and 35A ID. Ideal for automotive applications, it features 125W Pd, 0.035 ohm RDS(on), and AEC-Q101 compliance.
35 A
STB15NM60ND
STB15NM60ND by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 600V breakdown voltage, 14A max drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
STP15NM60ND
STP15NM60ND from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 600V breakdown voltage, 14A max drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
STW15NM60ND
STW15NM60ND from STMicroelectronics is an N-channel FET ideal for switching applications, featuring a 600V breakdown voltage and 14A max drain current. It offers a low on-resistance of 0.299Ω and operates at up to 150 °C. Its robust design ensures reliability in demanding environments.
TO-247AC
BUK9518-55,127
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Transistor Application: SWITCHING; Package Style (Meter): FLANGE MOUNT;
LOGIC LEVEL COMPATIBLE, ESD PROTECTED
125 mJ
57 A
.018 ohm
290 pF
228 A
215 ns
175 ns
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