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125 W Power Field Effect Transistors (FET) 99

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
DMN68M7SCT by Diodes Incorporated

DMN68M7SCT

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Feedback Capacitance (Crss): 198 pF; Minimum DS Breakdown Voltage: 68 V;

183 mJ

SINGLE WITH BUILT-IN DIODE

68 V

100 A

.008 ohm

METAL-OXIDE SEMICONDUCTOR

198 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

125 W

400 A

MIL-STD-202

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

DMTH8004LPS-13 by Diodes Incorporated

DMTH8004LPS-13

Diodes Incorporated

DMTH8004LPS-13 by Diodes Inc. is a N-CHANNEL FET for SWITCHING applications. It has 80V DS Breakdown Voltage, 400A IDM, and 0.0053 ohm Drain-Source On Resistance. With METAL-OXIDE SEMICONDUCTOR tech, it operates b/w -55 to 175 °C and meets MIL-STD-202 standards.

183.7 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

100 A

.0053 ohm

METAL-OXIDE SEMICONDUCTOR

71 pF

R-PDSO-F8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

125 W

400 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

LSIC1MO120G0160 by Littelfuse

LSIC1MO120G0160

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Minimum DS Breakdown Voltage: 1200 V; Operating Mode: ENHANCEMENT MODE;

ULTRA LOW RESISTANCE

DRAIN

SINGLE WITH BUILT-IN DIODE

1200 V

22 A

.2 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

TO-247AD

R-PSFM-T4

1

4

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

125 W

45 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE