Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IRF640,127
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; No. of Terminals: 3; Transistor Element Material: SILICON;
580 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
200 V
18 A
16 A
.18 ohm
METAL-OXIDE SEMICONDUCTOR
TO-220AB
R-PSFM-T3
e3
1
3
ENHANCEMENT MODE
175 Cel
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
N-CHANNEL
125 W
64 A
Not Qualified
FET General Purpose Power
NO
MATTE TIN
THROUGH-HOLE
SINGLE
SWITCHING
SILICON
PHP14NQ20T,127
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Package Body Material: PLASTIC/EPOXY; Maximum Pulsed Drain Current (IDM): 56 A;
70 mJ
14 A
.23 ohm
56 A
TIN
STB14NM65N
STMicroelectronics
STB14NM65N by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 12A max drain current, and operates at up to 150 °C. Ideal for power management in compact electronic devices.
300 mJ
650 V
12 A
.38 ohm
TO-263AB
R-PSSO-G2
2
150 Cel
SMALL OUTLINE
245
48 A
YES
GULL WING
30
STP14NM65N
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Terminal Finish: Matte Tin (Sn); Transistor Element Material: SILICON;
Matte Tin (Sn)
STW14NM65N
STW14NM65N by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 12A max drain current, and 125W power dissipation. Ideal for high-efficiency circuits in various electronic devices.
TO-247
NTP45N06
Onsemi
NTP45N06 by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A Drain Current, and 0.026 ohm On Resistance. Ideal for SWITCHING applications due to its 150A Pulsed Drain Current and 125W Power Dissipation capabilities in ENHANCEMENT MODE operation.
240 mJ
60 V
45 A
.026 ohm
e0
235
150 A
TIN LEAD
SPD30N03S2L-07
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
250 mJ
30 V
30 A
.0098 ohm
TO-252
260
120 A
SPB11N60C2
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; No. of Elements: 1; Additional Features: AVALANCHE RATED;
AVALANCHE RATED
340 mJ
600 V
11 A
22 A
SPB80N03S2L-06
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Pulsed Drain Current (IDM): 320 A; Avalanche Energy Rating (EAS): 240 mJ;
80 A
.0092 ohm
320 A
SPD50N03S2-07
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PSSO-G2;
50 A
.0073 ohm
200 A
SPD50N06S2L-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Minimum DS Breakdown Voltage: 55 V; Case Connection: DRAIN;
55 V
.0167 ohm
STP11NK50Z
STP11NK50Z by STMicroelectronics is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for switching applications. It features 40A max pulsed drain current and 0.52 ohm max drain-source resistance. Operating in enhancement mode, it has a power dissipation of 125W and can withstand up to 150°C temperature.
190 mJ
500 V
10 A
.52 ohm
40 A
STB7NK80Z-1
STB7NK80Z-1 from STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a max drain current of 5.2 A and a breakdown voltage of 800 V. It operates in enhancement mode with a power dissipation of up to 125 W. This versatile FET is suitable for high-efficiency power management systems.
210 mJ
800 V
5.2 A
1.8 ohm
TO-262AA
R-PSIP-T3
IN-LINE
20.8 A
STP9NK65Z
STP9NK65Z by STMicroelectronics is a N-CHANNEL Power FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 25.6A IDM, 200mJ EAS, and 1.2ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 125W at 150°C, making it suitable for high-power circuits.
200 mJ
6.4 A
1.2 ohm
25.6 A
STD150NH02L-1
STD150NH02L-1 by STMicroelectronics is an N-channel FET ideal for switching applications, featuring a max drain current of 150 A and a breakdown voltage of 24 V. It operates in enhancement mode with low on-resistance of 0.0035 Ω. This robust transistor supports high power dissipation up to 125 W.
LOW THRESHOLD
500 mJ
24 V
.0035 ohm
TO-251AA
600 A
FQB22P10TM_F085
Fairchild Semiconductor
FQB22P10TM_F085 by Fairchild Semiconductor is a P-CHANNEL Power FET with 100V DS Breakdown Voltage, 88A IDM, and 0.125 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 125W at 175°C.
710 mJ
100 V
.125 ohm
P-CHANNEL
88 A
Other Transistors
MTB30P06VT4G
MTB30P06VT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 105A IDM, 450mJ EAS, and 0.08 ohm RDS(on). With a max power dissipation of 125W and operating temperature of 175 °C, it offers reliable performance in various electronic systems.
450 mJ
.08 ohm
105 A
MTP50P03HDLG
MTP50P03HDLG by Onsemi is a P-CHANNEL Power FET with 30V DS Breakdown Voltage, 150A IDM, and 0.025 ohm RDS(on). Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has a max power dissipation of 125W at 150 °C.
1250 mJ
.025 ohm
STW5NK100Z
STW5NK100Z by STMicroelectronics is a N-CHANNEL Power FET with 1000V DS Breakdown Voltage. It has 14A IDM, 3.7 ohm RDS(on), and 125W Pdiss. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in diode in a RECTANGULAR package with THROUGH-HOLE terminals.
1000 V
3.5 A
3.7 ohm
TO-247AC
NTP45N06G
NTP45N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A Drain Current, and 0.026 ohm On Resistance. Ideal for SWITCHING applications due to its 150A Pulsed Drain Current and 125W Power Dissipation capabilities in ENHANCEMENT MODE operation.
Tin (Sn)
40
NTB75N03L09T4G
NTB75N03L09T4G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 75A Drain Current, and 0.008 ohm On Resistance. Ideal for SWITCHING applications due to its 225A Pulsed Drain Current capability. Package: PLASTIC/EPOXY, Surface Mountable GULL WING with 125W Power Dissipation.
1500 mJ
75 A
.008 ohm
225 A
NTP45N06LG
NTP45N06LG by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 150A IDM, and 0.028 ohm RDS. Ideal for SWITCHING applications due to its 125W Pdiss, ENHANCEMENT MODE operation, and built-in DIODE. Suitable for high-power circuits requiring efficient switching capabilities.
LOGIC LEVEL COMPATIBLE
.028 ohm
STP10NK50Z
STP10NK50Z by STMicroelectronics is an N-channel MOSFET ideal for switching applications, featuring a 500V breakdown voltage and a max drain current of 9A. It offers low on-resistance of 0.7Ω and operates at up to 150 °C. This versatile FET is suitable for various power management tasks.
230 mJ
9 A
.7 ohm
36 A
NTB45N06G
NTB45N06G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 45A Drain Current, and 0.026 ohm On Resistance. Ideal for SWITCHING applications due to its 150A Pulsed Drain Current and 240mJ Avalanche Energy Rating.
NTB45N06T4G
NTB45N06T4G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, 45A Max ID, and 0.026 ohm RDS(on). Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 125W and can handle up to 150A IDM.
FET General Purpose Powers
SIHF9640S-GE3
Vishay Intertechnology
Vishay Intertechnology's SIHF9640S-GE3 is a P-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 44A Max IDM, 700mJ EAS, and 0.5 ohm RDS(ON). With GULL WING terminals and SMALL OUTLINE package style, it operates at up to 150°C.
700 mJ
.5 ohm
44 A
STP5NK90Z
STP5NK90Z by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 900V breakdown voltage and a max drain current of 4.5A. It operates in enhancement mode with a power dissipation of up to 125W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.
900 V
4.5 A
2.5 ohm
NTMFS4833NT1G
NTMFS4833NT1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 288A IDM, 612.5mJ EAS, and 0.003ohm RDS(ON). Operating at 150°C max temp, it has a power dissipation of 125W in a small outline package.
612.5 mJ
191 A
.003 ohm
R-PDSO-F5
5
288 A
FLAT
DUAL
NTMFS4833NT3G
NTMFS4833NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 288A IDM, 612.5mJ EAS, and 0.003ohm RDS(ON). With a max power dissipation of 125W and operating temperature up to 150°C, it's suitable for high-power circuits requiring efficient switching capabilities.
IRF7749L2TR1PBF
International Rectifier
IRF7749L2TR1PBF by International Rectifier is a N-CHANNEL FET with 60V DS Breakdown Voltage. It has a max IDM of 800A, making it suitable for SWITCHING applications. With an EAS of 260mJ and 0.0015 ohm RDS(on), this transistor operates in ENHANCEMENT MODE efficiently up to 175°C.
260 mJ
375 A
33 A
.0015 ohm
R-XBCC-N9
e1
9
UNSPECIFIED
CHIP CARRIER
800 A
TIN SILVER COPPER
NO LEAD
BOTTOM
STD78N75F4
STD78N75F4 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a max drain current of 70 A, a breakdown voltage of 75 V, and operates at up to 175 °C. Ideal for high-power circuits, it ensures reliable performance in compact designs.
185 mJ
75 V
70 A
.011 ohm
NOT SPECIFIED
280 A
STI10N62K3
STI10N62K3 by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 620V breakdown voltage, 33.6A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
220 mJ
620 V
8.4 A
.75 ohm
33.6 A
STP10N62K3
STP10N62K3 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 620V breakdown voltage, 33.6A pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.
IPB12CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
FAST SWITCHING
154 mJ
67 A
.0126 ohm
268 A
IPB12CNE8NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; JESD-30 Code: R-PSSO-G2; Operating Mode: ENHANCEMENT MODE;
85 V
.0129 ohm
IPD12CNE8NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Drain-Source On Resistance: .0124 ohm; Maximum Drain Current (Abs) (ID): 67 A;
.0124 ohm
TO-252AA
IPI12CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Minimum DS Breakdown Voltage: 100 V; Package Style (Meter): IN-LINE;
IPP12CN10NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; JEDEC-95 Code: TO-220AB; JESD-30 Code: R-PSFM-T3;
IPP12CNE8NG
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
STI21N65M5
STI21N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM and 0.19 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150°C. The PLASTIC/EPOXY package with THROUGH-HOLE terminals ensures reliable performance in various power applications.
400 mJ
17 A
.19 ohm
68 A
STW21N65M5
STW21N65M5 from STMicroelectronics is a powerful N-channel FET designed for switching applications, featuring a 650V breakdown voltage and 68A pulsed drain current. It operates in enhancement mode with a max power dissipation of 125W. Ideal for high-efficiency power management solutions.
MCAC60N15YA-TP
Micro Commercial Components
MCAC60N15YA-TP by Micro Commercial Components is a N-CHANNEL FET with 150V DS Breakdown Voltage, 120A IDM, and 0.019 ohm RDS. It operates in Enhancement Mode with 125W power dissipation. Ideal for high-power applications requiring efficient switching and control.
150 V
60 A
.019 ohm
5 pF
R-PDSO-F8
8
-55 Cel
10
SPP11N60C3XKSA1
SPP11N60C3XKSA1 by Infineon is a N-CHANNEL Power FET with 600V DS Breakdown Voltage and 33A IDM. Widely used in power applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 125W.
30 pF
79 ns
VNV35N07-E
VNV35N07-E by STMicroelectronics is a robust N-channel FET designed for high-efficiency applications. It features a max drain current of 35 A, breakdown voltage of 60 V, and low on-resistance of 0.035 Ω. Ideal for power management in automotive and industrial systems.
COMPLEX
35 A
.035 ohm
R-PDSO-G10
AEC-Q101
1350 ns
800 ns
STD100N10LF7AG
STD100N10LF7AG from STMicroelectronics is a robust N-channel MOSFET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 100 V, and operates in an enhancement mode at temperatures up to 175 °C. Ideal for power management in automotive and industrial systems.
DMG8N65SCT
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Terminal Finish: MATTE TIN; Transistor Element Material: SILICON;
389 mJ
8 A
1.3 ohm
IGOT60R070D1AUMA1
IGOT60R070D1AUMA1 by Infineon is a N-CHANNEL FET for SWITCHING applications. It features a 600V DS Breakdown Voltage, 60A IDM, and 0.07 ohm RDS(on). With GALLIUM NITRIDE material and ENHANCEMENT MODE operation, it operates b/w -55 to 150 °C for high-power switching needs.
31 A
.07 ohm
.3 pF
R-PDSO-G20
20
GALLIUM NITRIDE
IGT60R070D1ATMA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 600 V;
R-PSSO-F3
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