Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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STH185N10F3-2
STMicroelectronics
STH185N10F3-2 by STMicroelectronics is a powerful N-channel MOSFET designed for high-efficiency applications. It supports a max drain current of 180 A, power dissipation of 315 W, and operates up to 175 °C. Ideal for power management in industrial systems.
SINGLE
180 A
METAL-OXIDE SEMICONDUCTOR
1
175 Cel
NOT SPECIFIED
N-CHANNEL
315 W
FET General Purpose Power
YES
STH185N10F3-6
STH185N10F3-6 by STMicroelectronics is a powerful N-channel MOSFET designed for high-efficiency applications. It supports a max drain current of 180 A, power dissipation of 315 W, and operates up to 175 °C. Ideal for power management in industrial systems.
STH265N6F6-2AG
STH265N6F6-2AG by STMicroelectronics is a single N-channel MOSFET ideal for high-power applications. It supports a max drain current of 180 A and power dissipation up to 300 W, operating efficiently at temperatures up to 175 °C. Perfect for power management in various electronic devices.
300 W
STH265N6F6-6AG
STH265N6F6-6AG by STMicroelectronics is a single N-channel MOSFET ideal for high-power applications. It supports a max drain current of 180 A and power dissipation of 300 W, operating up to 175 °C. Perfect for efficient power management in various electronic devices.
STI18N65M2
STI18N65M2 by STMicroelectronics is an N-channel MOSFET ideal for high-efficiency power applications. It supports a max drain current of 12 A and power dissipation up to 110 W, operating at temperatures up to 150 °C. Perfect for switching and amplification in various electronic circuits.
12 A
150 Cel
110 W
NO
STL260N3LLH6
STL260N3LLH6 by STMicroelectronics is a powerful N-channel FET designed for high-performance applications. It supports a max drain current of 260 A and power dissipation of 166 W, operating up to 175 °C. Ideal for efficient power management in various electronic devices.
260 A
e3
260
166 W
MATTE TIN
STL62P3LLH6
STL62P3LLH6 by STMicroelectronics is a P-channel MOSFET designed for efficient power management. It supports a max drain current of 62 A and power dissipation of 100 W, making it ideal for high-performance applications in compact designs. With an operating temp up to 175 °C, it's perfect for demanding environments.
62 A
P-CHANNEL
100 W
Other Transistors
STP13N65M2
STP13N65M2 from STMicroelectronics is a powerful N-channel MOSFET ideal for high-efficiency applications. It supports a max drain current of 10 A, power dissipation up to 110 W, and operates at temperatures up to 150 °C. Perfect for power management in industrial systems.
10 A
STP40N65M2
STP40N65M2 from STMicroelectronics is a powerful N-channel MOSFET ideal for high-efficiency applications. It supports a max drain current of 32 A and power dissipation up to 250 W, operating at temperatures up to 150 °C. Perfect for power management in industrial systems.
32 A
250 W
STU13N65M2
STU13N65M2 from STMicroelectronics is a powerful N-channel MOSFET ideal for high-efficiency applications. It supports a max drain current of 10 A and power dissipation up to 110 W, operating at temperatures up to 150 °C. Perfect for power management in various electronic devices.
STU7N105K5
STU7N105K5 by STMicroelectronics is an N-channel MOSFET ideal for power management applications. It supports a max drain current of 4 A, dissipates up to 110 W, and operates at temperatures up to 150 °C. Perfect for efficient switching in various electronic devices.
4 A
STW10N105K5
STW10N105K5 by STMicroelectronics is a N-CHANNEL FET with 6A max drain current and 130W power dissipation. Ideal for high-power applications, it operates at up to 150°C. Its METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single configuration setups.
6 A
130 W
STW48N60M2-4
STW48N60M2-4 by STMicroelectronics is a N-CHANNEL FET with 42A max drain current and 300W power dissipation. Ideal for high-power applications, it operates up to 150°C, making it suitable for industrial and automotive sectors.
42 A
STW48N60M2
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Drain Current (Abs) (ID): 42 A; Maximum Operating Temperature: 150 Cel;
STW7N105K5
STW7N105K5 by STMicroelectronics is a N-CHANNEL FET with 4A max drain current and 110W max power dissipation. It utilizes metal-oxide semiconductor technology, operates up to 150°C, and is commonly used in power applications requiring high efficiency and reliability.
CSD19535KTT
Texas Instruments
CSD19535KTT by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a 100V DS Breakdown Voltage, 400A IDM, and 0.0041 ohm Drain-Source On Resistance. With a max operating temperature of 175°C, this MOSFET in SMALL OUTLINE package is ideal for high-power switching circuits.
AVALANCHE RATED
451 mJ
DRAIN
100 V
200 A
.0041 ohm
38 pF
TO-263AB
R-PSSO-G2
2
ENHANCEMENT MODE
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
400 A
GULL WING
30
SWITCHING
SILICON
STF12N50M2
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; Maximum Drain Current (ID): 10 A; Peak Reflow Temperature (C): NOT SPECIFIED;
85 W
STH160N4LF6-2
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (ID): 120 A; No. of Elements: 1;
120 A
150 W
STL86N3LLH6AG
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Drain-Source On Resistance: .0076 ohm; Maximum Drain Current (Abs) (ID): 80 A;
30 V
80 A
.0076 ohm
60 W
STP160N4LF6
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 120 A;
STP265N6F6AG
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Maximum Operating Temperature: 175 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
STW56N60M2
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 350 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel;
52 A
350 W
STW56N65M2-4
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 358 W; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED;
49 A
358 W
STW56N65M2
STW56N65M2 by STMicroelectronics is a N-CHANNEL FET with 49A max drain current and 358W max power dissipation. It utilizes METAL-OXIDE SEMICONDUCTOR tech, suitable for high-power applications like motor control and power supplies. Operating temp up to 150°C ensures reliable performance in demanding environments.
CSD18542KCS
CSD18542KCS by Texas Instruments is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 400A IDM. Ideal for high-power applications, it features a max power dissipation of 200W, operating temperature range of -55 to 175°C, and avalanche energy rating of 281mJ.
281 mJ
60 V
170 A
14 pF
R-PSFM-T3
1.8
FLANGE MOUNT
200 W
THROUGH-HOLE
NVMFS5C460NLT3G
Onsemi
NVMFS5C460NLT3G by Onsemi is a single N-channel power FET with a min DS breakdown voltage of 40V and max pulsed drain current of 396A. It operates in enhancement mode, has a max power dissipation of 50W, and is suitable for applications requiring high drain currents such as automotive systems.
107 mJ
40 V
78 A
.0072 ohm
22 pF
R-PDSO-F5
5
50 W
396 A
AEC-Q101
Matte Tin (Sn) - annealed
FLAT
DUAL
NVMFS5C460NLWFT1G
NVMFS5C460NLWFT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 396A IDM, and 0.0072 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.
FDMS86380_F085
Fairchild Semiconductor
Fairchild Semiconductor's FDMS86380_F085 is a N-CHANNEL Power FET for SWITCHING applications. With 80V DS Breakdown Voltage, it offers 50A Drain Current and 75W Power Dissipation. Ideal for ENHANCEMENT MODE operations in various electronic devices.
AVALANCHE ENERGY RATED
16 mJ
80 V
50 A
13.4 ohm
R-PDSO-N5
75 W
NO LEAD
30 ns
31 ns
CSD18535KTTT
CSD18535KTTT by Texas Instruments is an N-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 400A.
616 mJ
.0029 ohm
31 pF
R-PSSO-G3
3
CSD18535KTT
CSD18535KTT by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a 60V DS Breakdown Voltage, 400A IDM, and 0.0029 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it can handle up to 175°C temperature making it suitable for high-power electronic devices.
CSD18536KTTT
CSD18536KTTT by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a 60V DS Breakdown Voltage, 400A IDM, and 0.0022 ohm Drain-Source On Resistance. With ENHANCEMENT MODE operation and METAL-OXIDE SEMICONDUCTOR technology, it offers high performance in various power management systems.
819 mJ
.0022 ohm
51 pF
CSD18542KTTT
CSD18542KTTT by Texas Instruments is an N-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 400A.
.0051 ohm
CSD19505KTTT
CSD19505KTTT by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a DS Breakdown Voltage of 80V, IDM of 400A, and EAS of 510mJ. With an operating range from -55 to 175 °C, it features a Drain connection and 0.0038 ohm On Resistance.
510 mJ
.0038 ohm
34 pF
CSD19538Q3A
CSD19538Q3A by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features a 100V DS Breakdown Voltage, 37A Pulsed Drain Current, and 0.072 ohm Drain-Source On Resistance. This ENHANCEMENT MODE transistor operates b/w -55 to 150 °C and comes in a SMALL OUTLINE package with METAL-OXIDE SEMICONDUCTOR technology.
8.1 mJ
4.9 A
.072 ohm
16.4 pF
37 A
CSD18510KTT
CSD18510KTT by Texas Instruments is an N-CHANNEL Power FET for SWITCHING applications. It has a 40V DS Breakdown Voltage, 400A Max Pulsed Drain Current, and 0.0026 ohm Max Drain-Source Resistance. This SINGLE configuration FET operates in ENHANCEMENT MODE with a temperature range of -55 to 175 °C.
328 mJ
.0026 ohm
551 pF
CSD18511KCS
CSD18511KCS by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It features 40V DS Breakdown Voltage, 400A IDM, and 0.0042 ohm RDS(on). Suitable for ENHANCEMENT MODE operation with -55 to 175 °C temperature range.
156 mJ
110 A
.0042 ohm
306 pF
TO-220AB
CSD18511KTT
CSD18511KTT by Texas Instruments is an N-CHANNEL Power FET with a 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 400A and EAS of 156mJ, operating in ENHANCEMENT MODE. With a low 0.0042 ohm Drain-Source On Resistance, this FET is suitable for high-current switching circuits.
CSD18511KTTT
CSD18511KTTT by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. With 40V DS Breakdown Voltage, it offers 400A IDM and 0.0042 ohm ID. Operating in -55 to 175 °C, this MOSFET has a Drain Connection and 306pF Crss.
NVMFS5C460NLWFAFT3G
NVMFS5C460NLWFAFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 396A IDM, and 0.0072 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
AOK42S60L
Alpha & Omega Semiconductor
AOK42S60L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 39A ID and 417W power dissipation. Ideal for high-power applications, it operates at up to 150°C, making it suitable for demanding environments requiring efficient power management.
39 A
417 W
AOT14N50FD
AOT14N50FD by Alpha & Omega Semiconductor is a N-CHANNEL FET with 14 A max drain current and 278 W power dissipation. Ideal for high-power applications, it operates at up to 150°C.
14 A
278 W
NP180N04TUK-E1-AY
Renesas Electronics
NP180N04TUK-E1-AY by Renesas Electronics is a N-CHANNEL FET with 180A ID and 348W power dissipation. Ideal for high-power applications, it operates at up to 175°C. Suitable for surface mount configurations, this MOSFET offers robust performance in demanding environments.
348 W
DMT6009LJ3
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 83.3 W; Package Shape: RECTANGULAR; Minimum DS Breakdown Voltage: 60 V;
39.8 mJ
74.5 A
.01 ohm
41 pF
TO-251
R-PSIP-T3
IN-LINE
2.9 W
83.3 W
280 A
IGOT60R070D1AUMA1
Infineon Technologies
IGOT60R070D1AUMA1 by Infineon is a N-CHANNEL FET for SWITCHING applications. It features a 600V DS Breakdown Voltage, 60A IDM, and 0.07 ohm RDS(on). With GALLIUM NITRIDE material and ENHANCEMENT MODE operation, it operates b/w -55 to 150 °C for high-power switching needs.
600 V
31 A
.07 ohm
.3 pF
R-PDSO-G20
20
125 W
60 A
TIN
GALLIUM NITRIDE
IGT60R070D1ATMA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 600 V;
R-PSSO-F3
IGT60R190D1SATMA1
Infineon's IGT60R190D1SATMA1 is a N-CHANNEL FET for SWITCHING applications. With 600V DS Breakdown Voltage, it offers 23A IDM and 0.19 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, this GaN transistor has a max power dissipation of 55.5W and operates b/w -55 to 150 °C.
12.5 A
.19 ohm
.15 pF
55.5 W
23 A
SGT120R65AL
SGT120R65AL by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage and 36A IDM. It is used for SWITCHING applications, operating in ENHANCEMENT MODE with a max power dissipation of 192W. This transistor features GALLIUM NITRIDE material and can handle up to 15A drain current.
BULK: 3000
650 V
15 A
.12 ohm
HIGH ELECTRON MOBILITY
.9 pF
R-PDSO-F8
8
192 W
36 A
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