Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IRF7831TR
International Rectifier
IRF7831TR by International Rectifier is a N-CHANNEL FET with 21A max drain current and 2.5W power dissipation. It operates in enhancement mode, suitable for high-power applications like motor control and power supplies. This surface-mount transistor uses metal-oxide semiconductor technology and can handle up to 150°C operating temperature.
SINGLE
21 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
150 Cel
N-CHANNEL
2.5 W
FET General Purpose Power
YES
BG3230E6327
Infineon Technologies
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .025 A;
.025 A
260
.2 W
FDB5800_F085
Fairchild Semiconductor
FDB5800_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 80A ID and 242W power dissipation. It operates in enhancement mode, suitable for high-power applications like motor control and power supplies. This single configuration FET has a max operating temperature of 175°C, making it ideal for demanding environments.
80 A
175 Cel
242 W
BLF145,112
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 68 W; Maximum Power Dissipation Ambient: 68 W; Maximum Drain-Source On Resistance: .75 ohm;
ISOLATED
65 V
6 A
.75 ohm
O-CRFM-F4
NOT APPLICABLE
4
200 Cel
CERAMIC, METAL-SEALED COFIRED
ROUND
FLANGE MOUNT
NOT SPECIFIED
68 W
Not Qualified
NO
FLAT
RADIAL
AMPLIFIER
SILICON
FDC2612_F095
FDC2612_F095 by Fairchild Semiconductor is a N-CHANNEL Power FET with 1.1A ID and 1.6W power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150°C. Ideal for low-power electronic devices requiring efficient power management.
1.1 A
1.6 W
NVF3055L108T3G
Onsemi
NVF3055L108T3G by Onsemi is a N-CHANNEL FET with 3A max drain current and 2.1W power dissipation. Ideal for power applications, it operates at up to 175°C and features surface mount configuration for easy installation in various electronic devices.
3 A
e3
2.1 W
MATTE TIN
30
2SJ673-AZ
Renesas Electronics
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 32 W; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
36 A
P-CHANNEL
32 W
Other Transistors
10
2SK3755-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 24 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (Abs) (ID): 45 A;
45 A
24 W
2SK3793-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): 10;
12 A
20 W
2SK3811-ZP-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 213 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 110 A;
110 A
213 W
2SK3901(0)-ZK-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 64 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1;
60 A
64 W
2SK3902(0)-ZK-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Elements: 1;
30 A
45 W
NP110N03PUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 288 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
288 W
NP110N04PUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 288 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel;
NP52N055SUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 56 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 52 A;
52 A
56 W
NP55N055SDG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 77 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): NOT SPECIFIED;
55 A
77 W
NP55N055SDG-E2-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 77 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 55 A;
NP55N055SUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 77 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 55 A;
NP60N03KUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 88 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (ID): 60 A;
88 W
NP60N04KUG-E1-AY
NP60N04KUG-E1-AY by Renesas Electronics is a N-CHANNEL FET with 60A max drain current and 88W power dissipation. Ideal for high-power applications, it operates at up to 175°C. Suitable for surface mount configurations, this MOSFET is designed for robust performance in demanding environments.
NP70N10KUF-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 70 A;
70 A
120 W
NP70N10KUF-E2-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED;
NP82N03PUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 143 W; Maximum Operating Temperature: 175 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
82 A
143 W
NP82N055PUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 143 W; Maximum Drain Current (ID): 82 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NP88N03KDG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 88 A;
88 A
200 W
NP88N04KUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): NOT SPECIFIED;
NP88N055KUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
NP88N055KUG-E2-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Maximum Drain Current (ID): 88 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
UPA1727G-E1-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; No. of Elements: 1; Terminal Finish: TIN BISMUTH;
10 A
e6
2 W
TIN BISMUTH
UPA1803GR-9JG-E1-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Operating Temperature: 150 Cel; Terminal Finish: TIN BISMUTH;
8 A
IXFH28N50Q
IXYS Corporation
IXYS Corporation's IXFH28N50Q is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 112A IDM and 0.2 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150°C. The transistor has a PLASTIC/EPOXY body, RECTANGULAR shape, and THROUGH-HOLE terminals for easy installation.
1500 mJ
DRAIN
500 V
28 A
.2 ohm
TO-247AD
R-PSFM-T3
3
PLASTIC/EPOXY
RECTANGULAR
112 A
THROUGH-HOLE
SWITCHING
STP75NF68
STMicroelectronics
STP75NF68 by STMicroelectronics is a powerful N-channel FET designed for high-efficiency applications. It supports a max drain current of 80 A and power dissipation of 190 W, operating up to 175 °C. Ideal for switching and amplification in various electronic circuits.
TO-220AB
190 W
Matte Tin (Sn)
NIC9N05TS1
NIC9N05TS1 by Onsemi is a N-CHANNEL FET with SINGLE configuration, suitable for surface mount applications. Features include 150 °C max operating temp, 260°C peak reflow temp, and METAL-OXIDE SEMICONDUCTOR technology. Ideal for power management in various electronic devices.
R-XUUC-N4
UNSPECIFIED
UNCASED CHIP
NO LEAD
UPPER
NTMFS4C01NT1G
NTMFS4C01NT1G by Onsemi is a N-CHANNEL FET with 303A max drain current and 3.2W power dissipation. Ideal for high-power applications, it operates at up to 150 °C and features METAL-OXIDE SEMICONDUCTOR technology for efficient performance in surface mount configurations.
303 A
3.2 W
STF12NM50ND
STF12NM50ND by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a 500V breakdown voltage, 44A max pulsed drain current, and operates at up to 150 °C. Ideal for power management in various electronic devices.
350 mJ
11 A
.38 ohm
25 W
44 A
AOTF7S65
Alpha & Omega Semiconductor
AOTF7S65 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 7A max drain current and 35W power dissipation. Ideal for high-power applications, it operates at up to 150°C. Its single configuration makes it suitable for various power management systems.
7 A
35 W
NVMFS4C05NT3G
NVMFS4C05NT3G by Onsemi is a N-CHANNEL FET with 116A ID and 79W power dissipation. Ideal for high-power applications, it operates at up to 175 °C, making it suitable for industrial use in demanding environments. With surface mount configuration and matte tin finish, it offers reliable performance in various power systems.
116 A
79 W
Matte Tin (Sn) - annealed
NVMFS4C05NWFT3G
NVMFS4C05NWFT3G by Onsemi is a single N-channel Power FET with 116A max drain current and 79W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175 °C. Ideal for high-power applications requiring efficient switching in surface-mount configurations.
TIN
CSD16340Q3T
Texas Instruments
CSD16340Q3T by Texas Instruments is an N-CHANNEL FET for SWITCHING applications. It features a Max Drain Current of 21A, Min DS Breakdown Voltage of 25V, and Max Pulsed Drain Current of 115A. With a package style of SMALL OUTLINE and operating temperatures ranging from -55 to 150°C, it's ideal for power management in various electronic devices.
AVALANCHE RATED
80 mJ
25 V
.0078 ohm
69 pF
S-PDSO-N8
8
-55 Cel
SQUARE
SMALL OUTLINE
115 A
DUAL
NTP8G202NG
NTP8G202NG by Onsemi is a single N-channel Power FET with 9A max drain current and 65W max power dissipation. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Operating temperature up to 150°C ensures reliable performance in demanding environments.
9 A
65 W
ZXMS6002GQTA
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; No. of Elements: 1; Terminal Form: GULL WING;
HIGH RELIABILITY
550 mJ
60 V
1.4 A
.675 ohm
R-PDSO-G4
AEC-Q101
GULL WING
STF10N105K5
STF10N105K5 by STMicroelectronics is an N-channel MOSFET ideal for power applications. It supports a max drain current of 6 A and power dissipation up to 30 W, operating efficiently at temperatures up to 150 °C. This FET is perfect for switching and amplification tasks in electronic circuits.
30 W
STF11N50M2
STF11N50M2 by STMicroelectronics is an N-channel MOSFET ideal for power management applications. It supports a max drain current of 8 A and power dissipation of 25 W, operating up to 150 °C. This transistor is perfect for efficient switching in various electronic devices.
STF5N105K5
STF5N105K5 by STMicroelectronics is an N-channel MOSFET ideal for power applications. It supports a max drain current of 3 A, dissipates up to 25 W, and operates at temperatures up to 150 °C. This FET is perfect for efficient switching in various electronic circuits.
STFI13N80K5
STFI13N80K5 from STMicroelectronics is an N-channel MOSFET ideal for power applications. It supports a max drain current of 12 A and power dissipation of 35 W, operating up to 150 °C. This FET is perfect for efficient switching in various electronic circuits.
STFW2N105K5
STFW2N105K5 by STMicroelectronics is a N-CHANNEL FET with 2A max drain current and 30W power dissipation. Ideal for applications requiring high-power switching in environments up to 150°C, such as power supplies and motor control systems.
2 A
STH175N4F6-2AG
STH175N4F6-2AG by STMicroelectronics is a powerful N-channel MOSFET designed for high-efficiency applications. It supports a max drain current of 120 A and power dissipation of 150 W, operating up to 175 °C. Ideal for power management in various electronic devices.
120 A
150 W
STH175N4F6-6AG
STH175N4F6-6AG by STMicroelectronics is a single N-channel MOSFET ideal for high-power applications. It supports a max drain current of 120 A and power dissipation of 150 W, operating up to 175 °C. Perfect for efficient power management in various electronic devices.
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