Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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BLC6G22LS-75,112
NXP Semiconductors
BLC6G22LS-75,112 by NXP Semiconductors is a single N-channel MOSFET designed for enhancement mode operation. It supports a max drain current of 18 A and operates up to 150 °C, making it ideal for high-performance power applications in compact designs.
SINGLE
18 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
150 Cel
N-CHANNEL
FET General Purpose Power
YES
BLF1822-10,112
BLF1822-10,112 by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-power applications. It supports a max drain current of 2.2 A and operates up to 200 °C, making it suitable for demanding environments in RF amplification. This MOSFET excels in efficiency and thermal performance.
2.2 A
200 Cel
BLF2043,112
BLF2043,112 by NXP Semiconductors is a single N-channel MOSFET designed for high-performance applications. It supports a max drain current of 2.2 A and operates up to 200 °C, making it ideal for power management in RF amplifiers and industrial systems.
BLF2043,135
BLF2043,135 by NXP Semiconductors is an N-channel MOSFET designed for high-performance applications. It supports a max drain current of 2.2 A and operates up to 200 °C, making it ideal for power amplification in RF circuits. This single configuration FET ensures efficient energy management in various electronic devices.
BLF3G22-30,135
BLF3G22-30,135 by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-efficiency power applications. It supports a max drain current of 12 A and operates up to 150 °C, making it suitable for demanding environments. This transistor excels in RF amplification and switching applications.
12 A
BLF404,115
NXP Semiconductors BLF404,115 is a single N-CHANNEL FET with 1.5A max drain current and 8.3W power dissipation. Ideal for applications requiring high-power amplification in enhancement mode operation up to 200°C, utilizing metal-oxide semiconductor technology for efficient performance.
1.5 A
8.3 W
BUK7619-100B,118
BUK7619-100B,118 from NXP is a single N-channel MOSFET ideal for high-power applications. It supports a max drain current of 64 A and power dissipation of 200 W, operating up to 175 °C. Perfect for efficient switching in power management systems.
64 A
e3
175 Cel
245
200 W
TIN
30
BUK763R4-30B,118
BUK763R4-30B,118 by NXP Semiconductors is a powerful N-channel FET designed for high-efficiency applications. It supports a max drain current of 75 A and power dissipation of 255 W, operating up to 175 °C. Ideal for enhancing performance in various electronic circuits.
75 A
255 W
PHD18NQ10T,118
PHD18NQ10T,118 by NXP Semiconductors is a single N-channel MOSFET designed for enhancement mode operation. It supports a max drain current of 18 A and power dissipation of 79 W, making it ideal for high-efficiency power applications. With an operating temp up to 175 °C, it's perfect for demanding environments.
79 W
SFT1443-TL-W
Onsemi
The Onsemi SFT1443-TL-W is a N-CHANNEL FET with 9A max drain current and 19W power dissipation. Ideal for applications requiring high power efficiency in surface mount configurations, such as power supplies and motor control systems.
9 A
e6
260
19 W
TIN BISMUTH
STP16N60M2
STMicroelectronics
STP16N60M2 by STMicroelectronics is a N-CHANNEL FET with 12A max drain current and 110W power dissipation. Ideal for applications requiring high power handling, such as motor control systems or power supplies due to its metal-oxide semiconductor technology and single configuration in enhancement mode.
110 W
NO
STU16N60M2
STU16N60M2 by STMicroelectronics is a N-CHANNEL FET with 12A ID and 110W power dissipation. Ideal for applications requiring high drain current capability, such as power supplies or motor control systems. Operating in enhancement mode, it offers reliable performance up to 150 °C.
TK10A60W,S4VX
Toshiba
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1;
9.7 A
30 W
TK31N60W,S1VF
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 30.8 A;
30.8 A
230 W
BUK7Y9R9-80E/CX
BUK7Y9R9-80E/CX from NXP Semiconductors is a single N-channel power FET designed for enhancement mode operation. It supports a max drain current of 89 A, power dissipation up to 195 W, and operates at temperatures up to 175 °C, ideal for high-performance applications.
89 A
195 W
TK13E25D,S1X(S
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 102 W; Maximum Drain Current (Abs) (ID): 13 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
13 A
102 W
TK16A60W5,S4VX
Toshiba's TK16A60W5,S4VX is an N-CHANNEL FET with 15.8A ID, 40W power dissipation, and 150°C max operating temp. Ideal for power applications requiring high drain current and efficient heat dissipation in enhancement mode operation.
15.8 A
40 W
TK100L60W,VQ
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 797 W; No. of Elements: 1; Maximum Drain Current (ID): 100 A;
100 A
797 W
NDF08N50ZH
NDF08N50ZH by Onsemi is a N-CHANNEL FET with 8.5A max drain current and 35W power dissipation. Ideal for power applications, it operates at up to 150 °C, featuring metal-oxide semiconductor tech and tin terminal finish.
8.5 A
35 W
FET General Purpose Powers
STB27NM60ND
STB27NM60ND by STMicroelectronics is a N-CHANNEL FET with 21A max drain current and 160W power dissipation. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Operating temp up to 150°C makes it suitable for industrial environments.
21 A
160 W
MATTE TIN
STB95N4F3
STB95N4F3 by STMicroelectronics is a N-CHANNEL FET with 80A max drain current and 110W power dissipation. Ideal for high-power applications, it operates at up to 175 °C and features surface mount configuration for easy installation.
80 A
STW12NK60Z
STW12NK60Z by STMicroelectronics is a N-CHANNEL FET with 10A max drain current and 150W power dissipation. Ideal for high-power applications, it operates at up to 150 °C with METAL-OXIDE SEMICONDUCTOR tech. Suitable for various industrial and automotive uses due to its robust single-channel configuration.
10 A
150 W
Matte Tin (Sn)
NVMFS5885NLT3G
NVMFS5885NLT3G by Onsemi is a single N-channel Power FET with 39A max drain current and 54W max power dissipation. Ideal for high-power applications, it operates at up to 175 °C and features metal-oxide semiconductor technology. Suitable for surface mount designs, it has matte tin terminal finish and can withstand peak reflow temperature of 260°C for up to 30s.
39 A
54 W
STFI26NM60N
STFI26NM60N by STMicroelectronics is a N-CHANNEL FET with 20A ID and 35W power dissipation. Ideal for high-power applications, it operates up to 150 °C. Its METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single configurations.
20 A
NOT SPECIFIED
STH180N10F3-6
STH180N10F3-6 by STMicroelectronics is a N-CHANNEL FET with 180A ID and 315W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for demanding environments requiring efficient power management in surface-mount configurations.
180 A
315 W
NP60N04MUK-S18-AY
Renesas Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 105 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
60 A
105 W
NP60N04NUK-S18-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 105 W; Maximum Drain Current (Abs) (ID): 60 A; Maximum Drain Current (ID): 60 A;
NP60N055NUK-S18-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 105 W; Maximum Drain Current (Abs) (ID): 60 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
NP89N055MUK-S18-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 147 W; Maximum Drain Current (ID): 90 A; Peak Reflow Temperature (C): NOT SPECIFIED;
90 A
147 W
NP89N055NUK-S18-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 147 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 90 A;
NP90N04MUK-S18-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 176 W; Maximum Drain Current (ID): 90 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
176 W
NP90N04NUK-S18-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 176 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NP90N055MUK-S18-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 176 W; Maximum Drain Current (ID): 90 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NP90N055NUK-S18-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 176 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 90 A;
SIJ482DP-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SIJ482DP-T1-GE3 is a N-CHANNEL FET with 60A max drain current and 69.4W power dissipation. Ideal for high-power applications, it operates up to 150°C, making it suitable for various industrial and automotive uses.
69.4 W
UPA2813T1L-E2-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Terminal Finish: MATTE TIN; Minimum DS Breakdown Voltage: 30 V;
30 V
27 A
.0062 ohm
P-CHANNEL
52 W
Other Transistors
STFI13N95K3
STFI13N95K3 by STMicroelectronics is a N-CHANNEL FET with 10A ID and 40W power dissipation. Ideal for high-power applications, it operates at up to 150 °C. Suitable for various electronic devices requiring efficient power management.
STB31N65M5
STB31N65M5 by STMicroelectronics is a N-CHANNEL FET with 22A ID and 150W power dissipation. Ideal for high-power applications, it operates at up to 150°C. Suitable for surface mount configurations, this MOSFET is designed for efficient power management in various electronic devices.
22 A
STF31N65M5
STF31N65M5 by STMicroelectronics is a N-CHANNEL FET with 22A ID and 30W power dissipation. Ideal for high-power applications, it operates at up to 150 °C. Its METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single configuration setups.
STFI260N6F6
STFI260N6F6 by STMicroelectronics is a N-CHANNEL FET with 80A ID and 41.7W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for industrial and automotive sectors.
41.7 W
STW31N65M5
STW31N65M5 by STMicroelectronics is a N-CHANNEL FET with 22A max drain current and 150W power dissipation. Ideal for high-power applications, it operates at up to 150°C, utilizing metal-oxide semiconductor technology for efficient performance.
STF12NK80Z
STF12NK80Z by STMicroelectronics is a N-CHANNEL FET with 10.5A max drain current and 40W power dissipation. Ideal for high-power applications, it operates at up to 150 °C, featuring METAL-OXIDE SEMICONDUCTOR tech and matte tin finish for robust performance.
10.5 A
UPA2735GR-E1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (ID): 16 A; Peak Reflow Temperature (C): NOT SPECIFIED;
16 A
2.5 W
UPA2736GR-E1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 14 A;
14 A
UPA2737GR-E1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 11 A;
11 A
UPA2738GR-E1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Drain Current (ID): 10 A; Maximum Drain Current (Abs) (ID): 10 A;
UPA2812T1L-E2-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain-Source On Resistance: .0048 ohm;
30 A
.0048 ohm
UPA2820T1S-E2-AT
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 16 W; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;
16 W
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