Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
UPA2821T1L-E1-AT
Renesas Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 26 A;
SINGLE
26 A
METAL-OXIDE SEMICONDUCTOR
1
150 Cel
N-CHANNEL
52 W
FET General Purpose Power
YES
UPA2822T1L-E1-AT
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 52 W; Maximum Drain Current (Abs) (ID): 34 A; Minimum DS Breakdown Voltage: 30 V;
30 V
34 A
.0026 ohm
NOT SPECIFIED
UPA2825T1S-E2-AT
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 16.5 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
24 A
16.5 W
STH260N6F6-6
STMicroelectronics
STH260N6F6-6 by STMicroelectronics is a N-CHANNEL FET with 180A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C. Suitable for surface mount configurations, this MOSFET is designed for robust performance in demanding environments.
180 A
175 Cel
300 W
FET General Purpose Powers
STH400N4F6-2
STH400N4F6-2 by STMicroelectronics is a N-CHANNEL FET with 180A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for demanding environments requiring robust performance.
STH400N4F6-6
STH400N4F6-6 by STMicroelectronics is a N-CHANNEL FET with 180A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for industrial and automotive sectors. This single configuration transistor is surface mountable, utilizing metal-oxide semiconductor technology.
STI360N4F6
STI360N4F6 by STMicroelectronics is a N-CHANNEL FET with 120A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for industrial and automotive sectors.
120 A
NO
STP360N4F6
STP360N4F6 by STMicroelectronics is a N-CHANNEL FET with 120A max drain current and 300W power dissipation. Ideal for high-power applications, it operates at up to 175°C temperature, featuring metal-oxide semiconductor technology.
STD30NF04LT
STD30NF04LT by STMicroelectronics is a N-CHANNEL FET with 30A max drain current and 50W max power dissipation. Ideal for power applications, it operates at up to 175 °C and features surface mount configuration for easy installation.
30 A
e3
260
50 W
MATTE TIN
STH110N10F7-2
STH110N10F7-2 by STMicroelectronics is a N-CHANNEL FET with 110A ID and 150W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for demanding environments requiring efficient power management in surface-mount configurations.
110 A
150 W
STH110N10F7-6
STH110N10F7-6 by STMicroelectronics is a N-CHANNEL FET with 110A ID and 150W power dissipation. Ideal for high-power applications, it operates up to 175 °C. Suitable for surface mount designs, this MOSFET offers efficient power management in various electronic systems.
STL51N3LLH5
STL51N3LLH5 by STMicroelectronics is a N-CHANNEL FET with 51A max drain current and 62.5W power dissipation. Ideal for high-power applications, it operates at up to 150 °C. Suitable for surface mount configurations, this MOSFET is designed for robust performance in demanding environments.
51 A
62.5 W
STP110N55F6
STMicroelectronics' STP110N55F6 is a single N-channel Power FET with 110A max drain current and 150W power dissipation. Utilizes metal-oxide semiconductor tech, operates up to 175 °C. Ideal for high-power applications requiring efficient switching capabilities.
Matte Tin (Sn)
UPA2630T1R-E2-AX
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: NICKEL PALLADIUM GOLD;
7 A
e4
P-CHANNEL
2.5 W
Other Transistors
NICKEL PALLADIUM GOLD
UPA2631T1R-E2-AX
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260;
6 A
STD80N6F6
STD80N6F6 by STMicroelectronics is a N-CHANNEL FET with 80A max drain current and 120W max power dissipation. Utilizes metal-oxide semiconductor technology, suitable for high-power applications in surface mount configurations. Operating temperature up to 175°C makes it ideal for industrial use.
80 A
120 W
STW36NM60ND
STW36NM60ND by STMicroelectronics is a N-CHANNEL FET with 29A max drain current and 190W power dissipation. Ideal for high-power applications, it operates at up to 150 °C with METAL-OXIDE SEMICONDUCTOR technology.
29 A
190 W
2SK3510-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 83 A;
83 A
125 W
RSS050P03FU6TB
ROHM
ROHM's RSS050P03FU6TB is a P-CHANNEL FET with 5A max drain current and 2W power dissipation. Ideal for applications requiring high efficiency in surface mount configurations, such as power management systems. Operating up to 150°C, it offers reliability in various industrial settings.
5 A
2 W
10
STFW1N105K3
STFW1N105K3 by STMicroelectronics is a N-CHANNEL FET with 1.4A max drain current and 20W max power dissipation. Ideal for applications requiring high power efficiency in a single configuration, such as power management systems or motor control circuits.
1.4 A
20 W
STH270N4F3-2
STH270N4F3-2 by STMicroelectronics is a N-CHANNEL FET with 180A ID, 300W power dissipation, and operates up to 175°C. Ideal for high-power applications requiring efficient switching capabilities in surface-mount configurations.
STP1N105K3
STP1N105K3 by STMicroelectronics is a N-CHANNEL FET with 1.4A max drain current and 60W max power dissipation. Ideal for applications requiring high efficiency power management in temperatures up to 150 °C.
60 W
STH360N4F6-2
STH360N4F6-2 by STMicroelectronics is a N-CHANNEL FET with 180A ID and 300W power dissipation. Ideal for high-power applications, it operates at up to 175 °C. Suitable for surface mount configurations, this MOSFET offers robust performance in demanding environments.
STI400N4F6
STI400N4F6 by STMicroelectronics is a N-CHANNEL Power FET with 120A max drain current and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C.
STP400N4F6
STMicroelectronics' STP400N4F6 is a N-CHANNEL FET with 120A max drain current and 300W max power dissipation. Ideal for high-power applications, it operates at up to 175 °C, utilizing metal-oxide semiconductor technology for efficient performance.
STP80N6F6
STMicroelectronics' STP80N6F6 is a N-CHANNEL FET with 110A ID and 150W power dissipation. Ideal for high-power applications, it operates at up to 175 °C, making it suitable for demanding environments requiring efficient power management.
STP80N70F6
STMicroelectronics' STP80N70F6 is a N-CHANNEL Power FET with 96A ID and 110W power dissipation. Ideal for high-power applications, it operates up to 175 °C. Its METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single-channel configurations.
96 A
110 W
STW23N85K5
STW23N85K5 by STMicroelectronics is a N-CHANNEL FET with 19A max drain current and 250W max power dissipation. Ideal for high-power applications, it operates at up to 150 °C, featuring metal-oxide semiconductor technology and matte tin terminal finish.
19 A
250 W
UPA2600T1R-E2-AX
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; Terminal Finish: NICKEL PALLADIUM GOLD; Maximum Drain-Source On Resistance: .0191 ohm;
20 V
.0191 ohm
2.4 W
UPA2690T1R-E2-AX
N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Maximum Drain Current (ID): 4 A; JESD-609 Code: e4;
4 A
.062 ohm
N-CHANNEL AND P-CHANNEL
2.3 W
UPA2764T1A-E2-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Drain Current (ID): 130 A; No. of Elements: 1;
130 A
83 W
UPA2765T1A-E2-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Drain Current (ID): 100 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
100 A
UPA2766T1A-E2-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Drain Current (ID): 130 A; JESD-609 Code: e3;
.00088 ohm
BUZ30AHXKSA1
Infineon Technologies
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Maximum Drain Current (ID): 21 A; JESD-609 Code: e3;
AVALANCHE RATED
450 mJ
200 V
21 A
.13 ohm
TO-220AB
R-PSFM-T3
3
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
FLANGE MOUNT
84 A
Not Qualified
TIN
THROUGH-HOLE
SILICON
BUZ30AH3045AATMA1
Infineon's BUZ30AH3045AATMA1 is a N-CHANNEL FET with 200V DS Breakdown Voltage, 84A IDM, and 0.13 ohm RDS. Ideal for power applications in small outline packages, it operates in enhancement mode with 150°C max temp.
DRAIN
TO-263AB
R-PSSO-G2
2
SMALL OUTLINE
GULL WING
IPD50R2K0CEBTMA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 22 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
2.4 A
22 W
IPU50R2K0CEBKMA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 22 W; Maximum Drain Current (Abs) (ID): 2.4 A; Maximum Drain Current (ID): 2.4 A;
STE60N105DK5
STE60N105DK5 by STMicroelectronics is a N-CHANNEL FET with 44A ID and 625W power dissipation. Ideal for high-power applications, it operates at up to 150 °C. Its METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single configurations.
44 A
625 W
STH320N4F6-2
STH320N4F6-2 by STMicroelectronics is a N-CHANNEL FET with 200A ID and 300W power dissipation. Ideal for high-power applications, it operates up to 175 °C. Suitable for surface mount configurations, this MOSFET is designed for robust performance in demanding environments.
200 A
STW3N170
STW3N170 by STMicroelectronics is a N-CHANNEL FET with 2.3A max drain current and 160W power dissipation. Ideal for high-power applications, it operates at up to 150°C, making it suitable for various industrial and automotive uses.
2.3 A
160 W
BFL4007-1E
Onsemi
BFL4007-1E by Onsemi is a N-CHANNEL Power FET with 8.7A ID and 40W power dissipation. Ideal for applications requiring high drain current capability, such as power supplies and motor control systems. Operating up to 150 °C, it features METAL-OXIDE SEMICONDUCTOR technology and TIN terminal finish.
8.7 A
40 W
STW57N65M5-4
STW57N65M5-4 by STMicroelectronics is a N-CHANNEL FET with 42A max drain current and 250W power dissipation. Ideal for high-power applications, it operates at up to 150°C.
42 A
2SK3820-DL-1E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 26 A;
BFL4036-1E
BFL4036-1E by Onsemi is a N-CHANNEL FET with 14A max drain current and 37W power dissipation. Ideal for applications requiring high-power switching in environments up to 150 °C, such as power supplies and motor control systems.
14 A
37 W
BFL4037-1E
BFL4037-1E by Onsemi is a N-CHANNEL Power FET with 11A ID and 40W power dissipation. It operates at up to 150 °C, making it suitable for high-power applications in various industries. The METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single configuration setups.
11 A
NVMFS4841NWFT1G
NVMFS4841NWFT1G by Onsemi is a single N-channel Power FET with 89A max drain current and 112W max power dissipation. Utilizes metal-oxide semiconductor technology, operates up to 175 °C. Ideal for high-power applications requiring efficient switching in surface-mount configurations.
89 A
112 W
30
NVMFS5826NLWFT1G
NVMFS5826NLWFT1G by Onsemi is a N-CHANNEL FET with 26A max drain current and 39W power dissipation. Ideal for power management applications, it operates at up to 175 °C, making it suitable for high-temperature environments. With surface mount configuration and matte tin finish, it offers efficient performance in various electronic devices.
39 W
NVMFS5826NLWFT3G
NVMFS5826NLWFT3G by Onsemi is a single N-channel Power FET with 26A max drain current and 39W max power dissipation. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Operating temperature up to 175 °C makes it suitable for demanding environments.
© 2023 All rights reserved
