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100 MHz Power Bipolar Junction Transistors (BJT) 37

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2STN2340 by STMicroelectronics

2STN2340

STMicroelectronics

2STN2340 by STMicroelectronics is a PNP BJT transistor with 4 terminals. It has a max power dissipation of 1.6W, hFE of 180, and operates up to 150 °C. Ideal for switching applications due to its max collector-emitter voltage of 40V and max collector current of 3A.

COLLECTOR

3 A

40 V

SINGLE

180

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.6 W

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

3STF1640 by STMicroelectronics

3STF1640

STMicroelectronics

3STF1640 by STMicroelectronics is a NPN BJT transistor with 40V VCEO, 6A IC, and 1.5W Ptot. Ideal for switching applications, it has a hFE of min. 20 and fT of 100MHz. Its small outline package makes it suitable for surface mount designs in various electronic devices.

COLLECTOR

6 A

40 V

SINGLE

20

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.5 W

Other Transistors

YES

Matte Tin (Sn)

FLAT

SINGLE

30

SWITCHING

SILICON

100 MHz

BCP6925E6327HTSA1 by Infineon Technologies

BCP6925E6327HTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Terminal Position: DUAL;

COLLECTOR

1 A

20 V

SINGLE

160

R-PDSO-G4

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

BCP5610E6327HTSA1 by Infineon Technologies

BCP5610E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

TR, 7 INCH; 1000

COLLECTOR

1 A

80 V

SINGLE

63

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

2 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BCP5616E6327HTSA1 by Infineon Technologies

BCP5616E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1 A;

TR, 7 INCH; 1000

COLLECTOR

1 A

80 V

SINGLE

100

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

2 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BDP947E6327HTSA1 by Infineon Technologies

BDP947E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

25 pF

45 V

SINGLE

50

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

5 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BDP949E6327HTSA1 by Infineon Technologies

BDP949E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

25 pF

60 V

SINGLE

50

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

5 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BDP953E6327HTSA1 by Infineon Technologies

BDP953E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): 3 A;

COLLECTOR

3 A

25 pF

100 V

SINGLE

15

R-PDSO-G4

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

5 W

AEC-Q101

YES

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

NJX1675PDR2G by Onsemi

NJX1675PDR2G

Onsemi

NJX1675PDR2G by Onsemi is a Power BJT with NPN/PNP polarity, 2 separate elements. Ideal for switching applications, it has hFE of 180, VCE of 30V, and IC of 3A. With a max temp of 150 °C and fT of 100MHz, this transistor in Gull Wing package suits SMT designs.

3 A

30 V

SEPARATE, 2 ELEMENTS

180

R-PDSO-G8

e3

1

2

8

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN AND PNP

Not Qualified

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

STD826T4 by STMicroelectronics

STD826T4

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A;

3 A

30 V

SINGLE

30

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

15 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

100 MHz

2STF2340 by STMicroelectronics

2STF2340

STMicroelectronics

2STF2340 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 1.4 W, a collector current of 3 A, and operates up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.

COLLECTOR

3 A

40 V

SINGLE

200

R-PDSO-F4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

1.4 W

Not Qualified

Other Transistors

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

STN690A by STMicroelectronics

STN690A

STMicroelectronics

STN690A by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, supports up to 3A collector current, and operates at temperatures up to 150 °C. Its compact surface mount design ensures efficient performance in electronic circuits.

COLLECTOR

3 A

30 V

SINGLE

90

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.6 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

2STF1340 by STMicroelectronics

2STF1340

STMicroelectronics

2STF1340 by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 1.4W, a collector current of up to 3A, and operates at temperatures up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.

COLLECTOR

3 A

40 V

SINGLE

180

R-PSSO-F3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

1.4 W

Not Qualified

Other Transistors

YES

FLAT

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

STD790AT4 by STMicroelectronics

STD790AT4

STMicroelectronics

STD790AT4 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 15W, operates up to 150 °C, and supports collector currents of 3A. Its compact surface mount design ensures efficient performance in electronic circuits.

3 A

30 V

SINGLE

90

TO-252AA

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

15 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

100 MHz

2STC4793 by STMicroelectronics

2STC4793

STMicroelectronics

2STC4793 by STMicroelectronics is an NPN power BJT ideal for amplifier applications. It features a max collector-emitter voltage of 230V, a min DC current gain (hFE) of 100, and operates up to 150 °C. Its through-hole design ensures easy integration in various circuits.

ISOLATED

1 A

230 V

SINGLE

100

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

Not Qualified

NO

MATTE TIN

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

100 MHz

STD724T4 by STMicroelectronics

STD724T4

STMicroelectronics

STD724T4 by STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 15W, a collector current of 3A, and operates up to 150 °C. Its compact surface mount design ensures efficient performance in electronic circuits.

3 A

30 V

SINGLE

30

TO-252

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

15 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

GULL WING

SINGLE

SWITCHING

SILICON

100 MHz

STF724 by STMicroelectronics

STF724

STMicroelectronics

STF724 by STMicroelectronics is an NPN BJT designed for switching applications, featuring a max power dissipation of 1.4 W and a collector current of 3 A. It operates up to 150 °C with a collector-emitter voltage of 30 V. This compact surface mount transistor ensures efficient performance in various electronic circuits.

COLLECTOR

3 A

30 V

SINGLE

30

R-PSSO-F3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

1.4 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

FLAT

SINGLE

SWITCHING

SILICON

100 MHz

STN724 by STMicroelectronics

STN724

STMicroelectronics

STN724 by STMicroelectronics is a versatile NPN BJT designed for switching applications. It features a max power dissipation of 1.6W, supports up to 3A collector current, and operates at temperatures up to 150 °C. Its compact SO package ensures efficient surface mounting.

COLLECTOR

3 A

30 V

SINGLE

30

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.6 W

Not Qualified

Other Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

STF826 by STMicroelectronics

STF826

STMicroelectronics

STF826 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max collector current of 3 A, a power dissipation of 1.4 W, and operates up to 150 °C. Its compact surface mount design makes it ideal for space-constrained circuits.

COLLECTOR

3 A

30 V

SINGLE

30

R-PDSO-F4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

PNP

1.4 W

Not Qualified

Other Transistors

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

100 MHz

BCP5616H6327XTSA1 by Infineon Technologies

BCP5616H6327XTSA1

Infineon Technologies

Infineon's BCP5616H6327XTSA1 is a NPN BJT transistor with 80V VCE, 1A IC, and 0.5V VCEsat. Ideal for amplifier applications, it has a hFE of 100, operates up to 150°C, and comes in a small outline package.

TR, 7 INCH; 1000

COLLECTOR

1 A

80 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

2 W

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BCP5516H6327XTSA1 by Infineon Technologies

BCP5516H6327XTSA1

Infineon Technologies

Infineon's BCP5516H6327XTSA1 is a NPN Power BJT with 60V VCE, 1A IC, and 0.5V VCEsat. Ideal for amplifier applications, it has a small outline package, 100MHz fT, and AEC-Q101 compliance.

TR, 7 INCH; 1000

COLLECTOR

1 A

60 V

SINGLE

40

R-PDSO-G4

e3

1

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

2 W

AEC-Q101

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

.5 V

BCP6925H6327XTSA1 by Infineon Technologies

BCP6925H6327XTSA1

Infineon Technologies

Infineon's BCP6925H6327XTSA1 is a PNP Power BJT with 160 min hFE, 20V VCE max, and 1A IC max. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting.

COLLECTOR

1 A

20 V

SINGLE

160

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

100 MHz

BCP51-16-TP by Micro Commercial Components

BCP51-16-TP

Micro Commercial Components

BCP51-16-TP by Micro Commercial Components is a PNP BJT with VCEsat of 0.5V, hFE of 100, and IC of 1A. Ideal for power applications in small outline packages, it operates b/w -55 to 150°C with a max VCE of 45V.

COLLECTOR

1 A

45 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

1.5 W

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

100 MHz

.5 V

BCP55-16-TP by Micro Commercial Components

BCP55-16-TP

Micro Commercial Components

BCP55-16-TP by Micro Commercial Components is a NPN Power BJT with VCEsat of 0.5V, hFE of 100, and IC of 1A. Ideal for applications requiring high power dissipation up to 1.5W in small outline packages, operating b/w -55°C to 150°C. Suitable for surface mount designs needing a compact and efficient transistor solution.

COLLECTOR

1 A

60 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.5 W

YES

MATTE TIN

GULL WING

DUAL

10

SILICON

100 MHz

.5 V

FZT795AQTA by Diodes Incorporated

FZT795AQTA

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 4;

HIGH RELIABILITY

COLLECTOR

.5 A

140 V

SINGLE

100

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

100 MHz

FZT949QTA by Diodes Incorporated

FZT949QTA

Diodes Incorporated

FZT949QTA by Diodes Inc. is a PNP BJT with max. VCE of 30V and IC of 5.5A, ideal for automotive applications due to AEC-Q101 standard compliance. Featuring hFE of 75 and fT of 100MHz, it's designed for surface mount in small outline packages with Gull Wing terminals.

HIGH RELIABILITY

COLLECTOR

5.5 A

30 V

SINGLE

75

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

Matte Tin (Sn)

GULL WING

DUAL

30

SILICON

100 MHz

NSV1C300ET4G-VF01 by Onsemi

NSV1C300ET4G-VF01

Onsemi

NSV1C300ET4G-VF01 by Onsemi is a PNP BJT transistor for switching applications. It has a hFE of 50, Vce of 100V, and Ic of 3A. Ideal for small outline packages in automotive electronics due to AEC-Q101 compliance and high transition frequency of 100MHz.

COLLECTOR

3 A

100 V

SINGLE

50

R-PSSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

100 MHz

BSR41F by Nexperia

BSR41F

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Case Connection: COLLECTOR;

COLLECTOR

1 A

60 V

SINGLE

50

TO-243AA

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

TIN

FLAT

SINGLE

30

SWITCHING

SILICON

100 MHz

PBSS5350Z/ZLF by Nexperia

PBSS5350Z/ZLF

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; No. of Elements: 1;

COLLECTOR

3 A

50 V

SINGLE

200

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

YES

GULL WING

DUAL

SWITCHING

SILICON

100 MHz

BSR30F by Nexperia

BSR30F

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Transistor Application: SWITCHING;

COLLECTOR

1 A

60 V

SINGLE

10

TO-243AA

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

AEC-Q101; IEC-60134

YES

TIN

FLAT

SINGLE

30

SWITCHING

SILICON

100 MHz

2N3053APBFREE by Central Semiconductor

2N3053APBFREE

Central Semiconductor

2N3053APBFREE by Central Semiconductor is a NPN BJT with VCEsat of 0.3V, hFE of 50, and IC of 0.7A. Ideal for power applications, it has a max operating temp of 200°C and fT of 100MHz. With a collector-emitter voltage of 60V, it suits various electronic designs requiring high power dissipation up to 5W.

.7 A

15 pF

60 V

SINGLE

50

TO-39

O-MBCY-W3

e3

1

3

200 Cel

-65 Cel

METAL

ROUND

CYLINDRICAL

NPN

5 W

NO

MATTE TIN OVER NICKEL

WIRE

BOTTOM

SILICON

100 MHz

.3 V

BCP68-25H6327 by Infineon Technologies

BCP68-25H6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 60;

COLLECTOR

1 A

20 V

SINGLE

60

R-PDSO-G4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

100 MHz

BCP56-16-AU_R2_000A1 by Panjit International

BCP56-16-AU_R2_000A1

Panjit International

Panjit International's BCP56-16-AU_R2_000A1 is a NPN Power BJT with 100V VCE, 1A IC, and 40 hFE. Ideal for AEC-Q101 compliant automotive applications due to its small outline package and high transition frequency of 100MHz.

COLLECTOR

1 A

100 V

SINGLE

40

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

GULL WING

DUAL

SILICON

100 MHz

BCX56-16-AU_R1_000A1 by Panjit International

BCX56-16-AU_R1_000A1

Panjit International

BCX56-16-AU_R1_000A1 by Panjit Int. is a NPN BJT transistor with hFE of 40, VCE of 100V, and IC of 1A. It operates b/w -55°C to 150°C, suitable for power applications in automotive electronics meeting AEC-Q101 standards.

COLLECTOR

1 A

100 V

SINGLE

40

R-PSSO-F3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

AEC-Q101

YES

FLAT

SINGLE

NOT SPECIFIED

SILICON

100 MHz

KSC1173YTSTUA by Onsemi

KSC1173YTSTUA

Onsemi

KSC1173YTSTUA by Onsemi is a NPN BJT transistor with max VCEsat of 0.8V, hFE of 120, and IC of 3A. Ideal for amplifier applications, it has a max operating temp of 150 °C and collector-emitter voltage of 30V. The package style is flange mount with through-hole terminals in a rectangular shape.

3 A

35 pF

30 V

SINGLE

120

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

10 W

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

100 MHz

.8 V

TTA004B,Q by Toshiba

TTA004B,Q

Toshiba

TTA004B,Q by Toshiba is a PNP BJT transistor with 160V VCE, 0.5V VCEsat, and 1.5A IC. Ideal for amplifier applications, it has a max power dissipation of 10W and hFE of 140. With a package style of FLANGE MOUNT and operating temp up to 150°C, it offers high performance in through-hole configuration.

1.5 A

17 pF

160 V

SINGLE

140

TO-126

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

1.5 W

10 W

NO

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

100 MHz

.5 V

ZDT795AQTA by Diodes Incorporated

ZDT795AQTA

Diodes Incorporated

PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 2.75 W; Maximum Collector Current (IC): .5 A;

.5 A

15 pF

140 V

SEPARATE, 2 ELEMENTS

100

R-PDSO-G8

e3

1

2

8

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

2.75 W

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

100 MHz

.3 V