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QCCJ Flash Memory 51

Flash Memory
Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Boot Block Maximum Clock Frequency (fCLK) Command User Interface Common Flash Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Type Width Maximum Write Cycle Time (tWC) Write Protection
SST39SF010A-55-4C-NHE-T by Microchip Technology

SST39SF010A-55-4C-NHE-T

Microchip Technology

SST39SF010A-55-4C-NHE-T by Microchip Technology is a NOR type Flash Memory with 128Kx8 organization, operating at 5V. It offers 100000 Write/Erase cycles endurance, 55ns access time, and supports asynchronous operation. Ideal for applications requiring high-speed data storage in commercial temperature environments.

55 ns

YES

YES

100

100000 Write/Erase Cycles

R-PQCC-J32

13.97 mm

1048576 bit

FLASH

8

1

1

32

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.556 mm

4K

.0001 Amp

Flash Memories

35 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

SST39VF040-70-4C-NHE-T by Microchip Technology

SST39VF040-70-4C-NHE-T

Microchip Technology

SST39VF040-70-4C-NHE-T by Microchip Technology is a 512Kx8 NOR flash memory chip with 128 sectors of 4K words each. Operating at 3V, it offers fast access time of 70ns and endurance up to 100,000 write/erase cycles. Ideal for commercial applications requiring reliable data storage in a compact chip carrier package.

70 ns

YES

YES

100

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

4194304 bit

FLASH

8

3

1

1

128

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

245

3/3.3

3

Not Qualified

3.556 mm

4K

.000015 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

COMMERCIAL

MATTE TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

TMS29F040-90C5FML by Texas Instruments

TMS29F040-90C5FML

Texas Instruments

TMS29F040-90C5FML by Texas Instruments is a 512Kx8 NOR flash memory chip with 3-STATE output. Operating at 5V, it offers 100000 Write/Erase Cycles endurance and has a max access time of 90ns. Ideal for applications requiring fast, reliable data storage in commercial temperature environments.

90 ns

100000 PROGRAM/ERASE CYCLES

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

NOT SPECIFIED

5

5

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

60 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

QUAD

NOT SPECIFIED

YES

NOR TYPE

11.43 mm

AT29LV010A-15JC by Atmel

AT29LV010A-15JC

Atmel

Atmel's AT29LV010A-15JC is a 128Kx8 NOR flash memory chip with 3.3V supply, operating at temperatures from 0 to 70°C. It features asynchronous operation, 150ns access time, and supports data polling. Ideal for applications requiring fast read/write speeds in commercial-grade devices.

150 ns

NO

YES

R-PQCC-J32

e0

13.97 mm

1048576 bit

FLASH

8

2

1

1K

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

3.3

3

Not Qualified

3.56 mm

128

.00004 Amp

Flash Memories

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

20 ms

AT29LV020-20JC by Atmel

AT29LV020-20JC

Atmel

AT29LV020-20JC by Atmel is a 256Kx8 NOR flash memory with a 3.3V supply voltage and 200ns max access time. It is commonly used in applications that require high-speed data storage and retrieval, such as embedded systems and consumer electronics.

200 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e0

13.97 mm

2097152 bit

FLASH

8

2

1

1K

32

262144 words

256K

ASYNCHRONOUS

70 Cel

0 Cel

256KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

3.3

3

Not Qualified

3.556 mm

256

.00004 Amp

Flash Memories

15 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

20 ms

AT29C010A-90JC by Atmel

AT29C010A-90JC

Atmel

AT29C010A-90JC by Atmel is a 128Kx8 NOR flash memory chip with 3-STATE output. Operating at 5V, it has a max access time of 90ns and supports asynchronous mode. Ideal for applications requiring fast data polling and parallel interfacing in commercial temperature environments.

90 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e0

13.97 mm

1048576 bit

FLASH

8

2

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

5

5

Not Qualified

3.556 mm

8K,112K,8K

.00003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

J BEND

1.27 mm

QUAD

30

YES

NOR TYPE

11.43 mm

10 ms

AT29C010A-90JI by Atmel

AT29C010A-90JI

Atmel

Atmel's AT29C010A-90JI is a 128Kx8 NOR Flash Memory with 90ns access time, operating at 5V. Suitable for industrial applications, it offers asynchronous operation, 3-state output, and a parallel interface. With a compact chip carrier package and low standby current of 0.00003A, it provides reliable non-volatile memory storage.

90 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e0

13.97 mm

1048576 bit

FLASH

8

2

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

5

5

Not Qualified

3.556 mm

8K,112K,8K

.00003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

J BEND

1.27 mm

QUAD

30

YES

NOR TYPE

11.43 mm

10 ms

AT29C512-70JC by Atmel

AT29C512-70JC

Atmel

AT29C512-70JC by Atmel is a 64KX8 NOR flash memory chip with 512 sectors, operating at 5V. It features a 128-word page size, 10000 write/erase cycles endurance, and 70ns access time. Ideal for applications requiring high-speed parallel data storage in commercial-grade devices.

70 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

524288 bit

FLASH

8

2

1

512

32

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

128

PARALLEL

225

5

5

Not Qualified

3.556 mm

128

.0001 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

10 ms

AT29C1024-70JC by Atmel

AT29C1024-70JC

Atmel

Atmel's AT29C1024-70JC is a 64KX16 NOR flash memory chip with 10000 Write/Erase Cycles endurance. Operating at 5V, it offers 70ns access time and supports asynchronous mode. Ideal for applications requiring fast data polling and 3-STATE output characteristics in commercial temperature grade environments.

70 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

NO

YES

10000 Write/Erase Cycles

S-PQCC-J44

e0

16.5862 mm

1048576 bit

FLASH

16

2

1

44

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX16

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

128

PARALLEL

225

5

5

Not Qualified

4.57 mm

.0002 Amp

Flash Memories

60 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

16.5862 mm

10 ms

AT29C1024-70JI by Atmel

AT29C1024-70JI

Atmel

Atmel's AT29C1024-70JI is a 64KX16 NOR flash memory chip with 10000 Write/Erase Cycles. Operating at 5V, it offers a max access time of 70ns and supports asynchronous mode. Ideal for industrial applications requiring reliable parallel memory storage in compact form factor.

70 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

NO

YES

10000 Write/Erase Cycles

S-PQCC-J44

e0

16.5862 mm

1048576 bit

FLASH

16

2

1

44

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX16

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC44,.7SQ

SQUARE

CHIP CARRIER

128

PARALLEL

225

5

5

Not Qualified

4.57 mm

.0002 Amp

Flash Memories

60 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

16.5862 mm

10 ms

AT49LV001-90JC by Atmel

AT49LV001-90JC

Atmel

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 32; Package Code: QCCJ; Package Shape: RECTANGULAR; Power Supplies (V): 3.3;

90 ns

BOTTOM

YES

YES

R-PQCC-J32

e0

13.97 mm

1048576 bit

FLASH

8

2

1

1,2,1,1

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

3.3

3

Not Qualified

3.556 mm

16K,8K,32K,64K

.00005 Amp

Flash Memories

50 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

AT29C020-12JI by Atmel

AT29C020-12JI

Atmel

AT29C020-12JI by Atmel is a 256Kx8 NOR flash memory chip with 3-STATE output, operating at 5V. It has a fast access time of 120ns and supports asynchronous operation. Ideal for industrial applications requiring reliable non-volatile memory storage in compact form factors.

120 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e0

13.97 mm

2097152 bit

FLASH

8

2

1

1K

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

5

5

Not Qualified

3.556 mm

256

.0003 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

10 ms

AT29C256-12JC by Atmel

AT29C256-12JC

Atmel

AT29C256-12JC by Atmel is a 32Kx8 NOR flash memory chip with 512 sectors, operating at 5V. It features a 64-word page size, 120ns access time, and supports asynchronous mode. Ideal for applications requiring fast data polling and low standby current consumption.

120 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

NO

YES

R-PQCC-J32

e0

13.97 mm

262144 bit

FLASH

8

2

1

512

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

64

PARALLEL

225

5

5

Not Qualified

3.556 mm

64

.0003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

J BEND

1.27 mm

QUAD

12

YES

NOR TYPE

11.43 mm

10 ms

AT29C256-70JC by Atmel

AT29C256-70JC

Atmel

AT29C256-70JC by Atmel is a 32Kx8 NOR flash memory chip with 3-STATE output, operating at 5V. It has a page size of 64 words and offers fast access time of 70ns. Ideal for applications requiring high-speed parallel memory storage in commercial-grade devices.

70 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

NO

YES

R-PQCC-J32

e0

13.97 mm

262144 bit

FLASH

8

2

1

512

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

64

PARALLEL

225

5

5

Not Qualified

3.556 mm

64

.0003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

10 ms

AT29C256-70JI by Atmel

AT29C256-70JI

Atmel

AT29C256-70JI by Atmel is a 32Kx8 NOR type Flash Memory with 3-STATE output, operating at 5V. It has a page size of 64 words and offers fast access time of 70ns. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact chip carrier package.

70 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

NO

YES

R-PQCC-J32

e0

13.97 mm

262144 bit

FLASH

8

2

1

512

32

32768 words

32K

ASYNCHRONOUS

85 Cel

-40 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

64

PARALLEL

225

5

5

Not Qualified

3.556 mm

64

.0003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

10 ms

AT29C257-70JC by Atmel

AT29C257-70JC

Atmel

FLASH; Temperature Grade: COMMERCIAL; No. of Terminals: 32; Package Code: QCCJ; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 225;

70 ns

HARDWARE AND SOFTWARE DATA PROTECTION; 10000 CYCLES TYPICAL ENDURANCE

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

262144 bit

FLASH

8

2

1

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

64

PARALLEL

225

5

5

Not Qualified

3.56 mm

.0003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

10 ms

AT29C257-90JC by Atmel

AT29C257-90JC

Atmel

AT29C257-90JC by Atmel is a 32Kx8 NOR flash memory chip with 3-STATE output. Operating at 5V, it offers fast access time of 90ns and endurance of 10k cycles. Ideal for applications requiring high-speed parallel memory storage in commercial-grade devices.

90 ns

HARDWARE AND SOFTWARE DATA PROTECTION; 10000 CYCLES TYPICAL ENDURANCE

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

262144 bit

FLASH

8

2

1

32

32768 words

32K

ASYNCHRONOUS

70 Cel

0 Cel

32KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

64

PARALLEL

225

5

5

Not Qualified

3.56 mm

.0003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

J BEND

1.27 mm

QUAD

30

YES

NOR TYPE

11.43 mm

10 ms

AT49F002N-55JI by Atmel

AT49F002N-55JI

Atmel

Atmel's AT49F002N-55JI is a 256Kx8 NOR flash memory chip with 262144 words. Operating at 5V, it offers fast access time of 55ns and low standby current of 0.0003Amp. Ideal for industrial applications requiring reliable non-volatile memory storage in compact form factor.

55 ns

BOTTOM

YES

YES

R-PQCC-J32

e0

13.97 mm

2097152 bit

FLASH

8

2

1

1,2,1,1

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

5

5

Not Qualified

3.55 mm

16K,8K,96K,128K

.0003 Amp

Flash Memories

90 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29F010B45K1 by STMicroelectronics

M29F010B45K1

STMicroelectronics

M29F010B45K1 from STMicroelectronics is a 1Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and a max access time of 45 ns. It supports up to 100,000 write/erase cycles and operates in commercial temperature ranges. Ideal for embedded applications, it comes in a compact chip carrier package with 32 terminals.

45 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.56 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29F010B70K6T by STMicroelectronics

M29F010B70K6T

STMicroelectronics

M29F010B70K6T from STMicroelectronics is a 1Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and a max access time of 70 ns. It supports industrial applications with -40 °C to 85 °C temp range and offers 100k write/erase cycles. This compact chip carrier design ensures reliable performance in various electronic devices.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.56 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29W040B90K1 by STMicroelectronics

M29W040B90K1

STMicroelectronics

M29W040B90K1 from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 90 ns. It supports up to 100,000 write/erase cycles and operates in temperatures from 0 °C to 70 °C. Ideal for embedded applications, it offers reliable data storage in compact designs.

90 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

2.7

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29W040B90K6 by STMicroelectronics

M29W040B90K6

STMicroelectronics

M29W040B90K6 from STMicroelectronics is a 4Mb NOR Flash memory with a 3.3V supply, featuring an asynchronous operating mode and a max access time of 90 ns. It supports industrial applications with a temp range of -40 °C to 85 °C and offers 100k write/erase cycles. Ideal for embedded systems, it comes in a compact chip carrier package with quad terminals.

90 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

2.7

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

20 mA

3.6 V

2.7 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29F040B70K1 by STMicroelectronics

M29F040B70K1

STMicroelectronics

M29F040B70K1 from STMicroelectronics is a 512Kx8 NOR Flash memory with a 5V supply, ideal for asynchronous applications. It features a max access time of 70 ns and supports up to 100,000 write/erase cycles. This compact chip carrier is perfect for embedded systems requiring reliable data storage.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29F002BB70K6E by STMicroelectronics

M29F002BB70K6E

STMicroelectronics

M29F002BB70K6E from STMicroelectronics is a NOR flash memory with a 5V supply, featuring 256K x 8 organization and an industrial temperature range of -40 °C to 85 °C. It supports asynchronous operation and offers up to 100,000 write/erase cycles. Ideal for embedded applications requiring reliable data storage.

70 ns

BOTTOM BOOT BLOCK

BOTTOM

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

2097152 bit

FLASH

8

1

1,2,1,3

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.56 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M29F002BT70K6E by STMicroelectronics

M29F002BT70K6E

STMicroelectronics

STMicroelectronics M29F002BT70K6E is a 256Kx8 NOR Flash Memory with 262144 words, offering 100000 Write/Erase Cycles. Operating at -40 to 85 °C, it has a supply voltage of 4.5-5.5V and supports asynchronous mode. Ideal for industrial applications requiring fast access time and high endurance.

70 ns

TOP BOOT BLOCK

TOP

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

2097152 bit

FLASH

8

1

1,2,1,3

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.56 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

PSD813F1VA-15J by STMicroelectronics

PSD813F1VA-15J

STMicroelectronics

PSD813F1VA-15J by STMicroelectronics is a 128Kx8 NOR Flash memory with a synchronous operating mode and a max access time of 15 ns. It operates at a nominal voltage of 3.3V, suitable for commercial applications. This compact chip carrier design ensures efficient performance in various electronic devices.

15 ns

S-PQCC-J52

19.1 mm

1048576 bit

FLASH

8

1

52

131072 words

128K

SYNCHRONOUS

70 Cel

0 Cel

128KX8

PLASTIC/EPOXY

QCCJ

SQUARE

CHIP CARRIER

PARALLEL

3.3

Not Qualified

4.57 mm

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

J BEND

1.27 mm

QUAD

NOR TYPE

19 mm

10 ms

PSD813F1VA-20UI by STMicroelectronics

PSD813F1VA-20UI

STMicroelectronics

PSD813F1VA-20UI by STMicroelectronics is a 128Kx8 NOR Flash memory with a synchronous operating mode, ideal for industrial applications. It operates at 3.0-3.6V and withstands temperatures from -40 °C to 85 °C. With a max access time of 20ns, it ensures efficient data retrieval.

20 ns

S-PQCC-J52

19.1 mm

1048576 bit

FLASH

8

1

52

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

SQUARE

CHIP CARRIER

PARALLEL

3.3

Not Qualified

4.57 mm

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

J BEND

1.27 mm

QUAD

NOR TYPE

19 mm

10 ms

CAT28F512G12 by Onsemi

CAT28F512G12

Onsemi

CAT28F512G12 by Onsemi is a 64Kx8 NOR flash memory chip with 524288-bit density. Operating at 5V, it offers 100000 write/erase cycles and has a max access time of 120ns. Ideal for commercial applications requiring high-speed parallel memory with a command user interface.

120 ns

YES

NO

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

524288 bit

FLASH

8

3

1

32

65536 words

64K

ASYNCHRONOUS

70 Cel

0 Cel

64KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

260

5

12

Not Qualified

3.55 mm

.00001 Amp

Flash Memories

30 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

NO

NOR TYPE

11.43 mm

CAT28F512GI12 by Onsemi

CAT28F512GI12

Onsemi

CAT28F512GI12 by Onsemi is a 64KX8 NOR flash memory chip with 524288 bit density. It operates at 5V, has 100000 Write/Erase cycles endurance, and offers fast access time of 120 ns. Ideal for industrial applications requiring high-speed parallel memory with 32 terminals in a compact chip carrier package.

120 ns

YES

NO

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

524288 bit

FLASH

8

3

1

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

12

Not Qualified

3.55 mm

.00001 Amp

Flash Memories

30 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN

J BEND

1.27 mm

QUAD

NO

NOR TYPE

11.43 mm

AT29C040A-90JI by Atmel

AT29C040A-90JI

Atmel

Atmel's AT29C040A-90JI is a 512Kx8 NOR flash memory chip with 2K sectors, operating at 5V. It features asynchronous mode, 90ns access time, and supports parallel programming. Ideal for industrial applications requiring fast data polling and toggle bit functionality in a compact chip carrier package.

90 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e0

13.97 mm

4194304 bit

FLASH

8

2

1

2K

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

256

PARALLEL

225

5

5

Not Qualified

3.556 mm

256

.0003 Amp

Flash Memories

40 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

10 ms

AT29C512-70JI by Atmel

AT29C512-70JI

Atmel

AT29C512-70JI by Atmel is a 64KX8 NOR flash memory chip with 512 sectors, operating at 5V. It has an endurance of 10k cycles and offers fast access time of 70ns. Ideal for industrial applications requiring reliable non-volatile memory storage in compact form factor.

70 ns

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

524288 bit

FLASH

8

2

1

512

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

128

PARALLEL

225

5

5

Not Qualified

3.556 mm

128

.0003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

10 ms

AT29C010A-70JI by Atmel

AT29C010A-70JI

Atmel

AT29C010A-70JI by Atmel is a 128KX8 NOR type flash memory with a max access time of 70 ns. It operates at a nominal voltage of 5V and has a package style of chip carrier. This memory IC is commonly used in industrial applications requiring high-speed data storage.

70 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e0

13.97 mm

1048576 bit

FLASH

8

2

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

5

5

Not Qualified

3.556 mm

8K,112K,8K

.00003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

J BEND

1.27 mm

QUAD

30

YES

NOR TYPE

11.43 mm

10 ms

AT49F002AT-55JI by Atmel

AT49F002AT-55JI

Atmel

AT49F002AT-55JI by Atmel is a 256Kx8 NOR flash memory chip with 262144 words, offering 10000 write/erase cycles. Operating at an industrial temperature grade of -40 to 85 °C, it supports asynchronous mode and has a max access time of 55 ns. Ideal for applications requiring fast data polling and reliable non-volatile memory storage.

55 ns

TOP

YES

YES

10000 Write/Erase Cycles

R-PQCC-J32

e0

13.97 mm

2097152 bit

FLASH

8

2

1

1,2,1,3

32

262144 words

256K

ASYNCHRONOUS

85 Cel

-40 Cel

256KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

225

5

5

Not Qualified

3.556 mm

16K,8K,32K,64K

.0001 Amp

Flash Memories

25 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN LEAD

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

M50FLW040AK5G by STMicroelectronics

M50FLW040AK5G

STMicroelectronics

M50FLW040AK5G from STMicroelectronics is a 4Mb NOR Flash memory with a synchronous operating mode and a supply voltage of 3.3V. It features an access time of 11 ns, operates b/w -20 °C to 85 °C, and comes in a compact chip carrier package. Ideal for embedded applications requiring fast data storage and retrieval.

11 ns

YES

NO

R-PQCC-J32

e3

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

SYNCHRONOUS

85 Cel

-20 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

YES

3.56 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

MATTE TIN

J BEND

1.27 mm

QUAD

NO

NOR TYPE

11.43 mm

M50FLW080AK5G by STMicroelectronics

M50FLW080AK5G

STMicroelectronics

M50FLW080AK5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a synchronous operating mode and a supply voltage of 3.3V. It features fast access times of 11 ns, operates b/w -20 °C to 85 °C, and is ideal for embedded applications. Its compact chip carrier design ensures efficient surface mounting in various electronic devices.

11 ns

YES

NO

R-PQCC-J32

e3

13.97 mm

8388608 bit

FLASH

8

1

48,13

32

1048576 words

1M

SYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

3.56 mm

4K,64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN

J BEND

1.27 mm

QUAD

NO

NOR TYPE

11.43 mm

M50FLW080BK5G by STMicroelectronics

M50FLW080BK5G

STMicroelectronics

M50FLW080BK5G from STMicroelectronics is a 1M x 8 NOR Flash memory with a synchronous operating mode and a max access time of 11 ns. It operates at 3.3V, features a quad terminal position, and supports applications in embedded systems. With a temp range of -20 °C to 85 °C, it's ideal for reliable data storage.

11 ns

YES

NO

R-PQCC-J32

e3

13.97 mm

8388608 bit

FLASH

8

1

48,13

32

1048576 words

1M

SYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

3.56 mm

4K,64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

TIN

J BEND

1.27 mm

QUAD

NO

NOR TYPE

11.43 mm

M50FW080K5G by STMicroelectronics

M50FW080K5G

STMicroelectronics

M50FW080K5G from STMicroelectronics is a NOR flash memory with 1M words capacity, operating at 3.3V. It features a fast access time of 11 ns and supports asynchronous mode. Ideal for embedded applications, it operates b/w -20 °C to 85 °C in a compact chip carrier package.

11 ns

YES

NO

R-PQCC-J32

e3

13.97 mm

8388608 bit

FLASH

8

1

16

32

1048576 words

1M

ASYNCHRONOUS

85 Cel

-20 Cel

1MX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

MATTE TIN

J BEND

1.27 mm

QUAD

NO

NOR TYPE

11.43 mm

M50FW040K5G by STMicroelectronics

M50FW040K5G

STMicroelectronics

M50FW040K5G from STMicroelectronics is a 4Mb NOR Flash memory with a synchronous operating mode and a supply voltage of 3.3V. It features an access time of 11ns, operates b/w -20 °C to 85 °C, and comes in a compact chip carrier package. Ideal for embedded applications requiring reliable data storage.

11 ns

YES

NO

R-PQCC-J32

e3

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

SYNCHRONOUS

85 Cel

-20 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3.3

3

Not Qualified

YES

3.56 mm

.0001 Amp

Flash Memories

60 mA

3.6 V

3 V

3.3

YES

CMOS

OTHER

MATTE TIN

J BEND

1.27 mm

QUAD

NO

NOR TYPE

11.43 mm

AT29BV010A-12JU by Atmel

AT29BV010A-12JU

Atmel

Atmel's AT29BV010A-12JU is a 128Kx8 NOR flash memory chip with 3V nominal voltage. Operating in asynchronous mode, it offers fast access time of 120ns and low standby current of 0.00005Amp. Ideal for industrial applications requiring reliable non-volatile memory storage.

120 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

2

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

245

3/3.3

2.7

Not Qualified

3.556 mm

8K,112K,8K

.00005 Amp

Flash Memories

15 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

20 ms

AT29C512-70JU by Atmel

AT29C512-70JU

Atmel

AT29C512-70JU by Atmel is a 64KX8 NOR type flash memory chip with 512 sectors of 128 words each. Operating at 5V, it offers fast access time of 70ns and endurance of 10k write/erase cycles. Ideal for industrial applications requiring reliable parallel memory storage in compact form factor.

70 ns

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

524288 bit

FLASH

8

2

1

512

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

128

PARALLEL

245

5

5

Not Qualified

3.556 mm

128

.0003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

10 ms

AT29C512-90JU by Atmel

AT29C512-90JU

Atmel

AT29C512-90JU by Atmel is a 64KX8 NOR flash memory chip with 512 sectors, operating at 5V. It has an endurance of 10k write/erase cycles, max access time of 90ns, and supports data polling. Ideal for industrial applications requiring reliable non-volatile memory with fast access times.

90 ns

AUTOMATIC WRITE; HARDWARE & SOFTWARE DATA PROTECTION

NO

YES

10000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

524288 bit

FLASH

8

2

1

512

32

65536 words

64K

ASYNCHRONOUS

85 Cel

-40 Cel

64KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

128

PARALLEL

245

5

5

Not Qualified

3.556 mm

128

.0003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

10 ms

AT29C010A-90JU by Atmel

AT29C010A-90JU

Atmel

AT29C010A-90JU by Atmel is a 128Kx8 NOR flash memory chip with asynchronous operation, 90 ns access time, and 5V programming voltage. It is ideal for industrial applications requiring fast data polling and 3-STATE output characteristics in a compact chip carrier package.

90 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

2

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

3-STATE

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

245

5

5

Not Qualified

3.556 mm

8K,112K,8K

.00003 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

10 ms

AT29C010A-70JU by Atmel

AT29C010A-70JU

Atmel

Atmel's AT29C010A-70JU is a 128Kx8 NOR flash memory chip with 131,072 words. Operating at 5V, it has a max access time of 70ns and supports asynchronous mode. Ideal for industrial applications requiring fast data polling and parallel programming with a temperature range of -40 to 85°C.

70 ns

BOTTOM/TOP

NO

YES

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

2

1

1,1,1

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

245

5

5

Not Qualified

3.556 mm

8K,112K,8K

.00003 Amp

Flash Memories

50 mA

5.25 V

4.75 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

10 ms

MX29LV040CQI-90G by Macronix

MX29LV040CQI-90G

Macronix

MX29LV040CQI-90G by Macronix is a 512KX8 NOR flash memory with a max access time of 90 ns. It operates at a nominal voltage of 3V and has a temperature grade of industrial. This flash memory is commonly used in applications that require high-speed data storage and retrieval.

90 ns

YES

YES

YES

R-PQCC-J32

e3

14.05 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

3/3.3

3

Not Qualified

3.55 mm

64K

.000005 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3

YES

CMOS

INDUSTRIAL

Tin (Sn)

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm

MX29F040CQC-70G by Macronix

MX29F040CQC-70G

Macronix

Macronix MX29F040CQC-70G is a 512Kx8 NOR flash memory chip with 70ns access time and 100,000 write/erase cycles. Ideal for commercial applications requiring fast data polling and asynchronous operation in a compact chip carrier package.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

14.05 mm

4194304 bit

FLASH

8

3

1

8

32

524288 words

512K

ASYNCHRONOUS

70 Cel

0 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

260

5

5

Not Qualified

3.55 mm

64K

.000005 Amp

Flash Memories

50 mA

5.5 V

4.5 V

5

YES

CMOS

COMMERCIAL

Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

M29F010B70K6E by STMicroelectronics

M29F010B70K6E

STMicroelectronics

M29F010B70K6E from STMicroelectronics is a 1Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and 70 ns max access time. It supports industrial applications with -40 °C to 85 °C temp range and offers 100k write/erase cycles. This compact chip carrier design ensures reliable performance in various electronic devices.

70 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

250

5

5

Not Qualified

3.56 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

M29F010B45K6E by STMicroelectronics

M29F010B45K6E

STMicroelectronics

M29F010B45K6E from STMicroelectronics is a 1Mb NOR Flash memory with a 5V supply, featuring an asynchronous operating mode and a max access time of 45 ns. It supports industrial applications with -40 °C to 85 °C temp range and offers 100k write/erase cycles. This compact chip carrier design ensures reliable performance in various electronic devices.

45 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

1048576 bit

FLASH

8

1

8

32

131072 words

128K

ASYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

250

5

5

Not Qualified

3.56 mm

16K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

J BEND

1.27 mm

QUAD

40

YES

NOR TYPE

11.43 mm

M29F040B45K6E by STMicroelectronics

M29F040B45K6E

STMicroelectronics

M29F040B45K6E from STMicroelectronics is a 512Kx8 NOR Flash memory with a 5V supply, ideal for industrial applications. It features an asynchronous operating mode, max access time of 45 ns, and supports up to 100k write/erase cycles. This compact chip carrier design ensures reliable performance in harsh environments.

45 ns

YES

YES

100000 Write/Erase Cycles

R-PQCC-J32

e3

13.97 mm

4194304 bit

FLASH

8

1

8

32

524288 words

512K

ASYNCHRONOUS

85 Cel

-40 Cel

512KX8

PLASTIC/EPOXY

QCCJ

LDCC32,.5X.6

RECTANGULAR

CHIP CARRIER

PARALLEL

5

5

Not Qualified

3.56 mm

64K

.0001 Amp

Flash Memories

20 mA

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

J BEND

1.27 mm

QUAD

YES

NOR TYPE

11.43 mm