Loading...

GULL WING Varactor Diodes 49

Varactor Diodes
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Breakdown Voltage Case Connection Config Diode Cap Tolerance Minimum Diode Capacitance Ratio Nominal Diode Capacitance Diode Element Material Diode Type Maximum Forward Voltage (VF) Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Minimum Quality Factor Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Variable Capacitance Diode Classification
BB171X by NXP Semiconductors

BB171X

NXP Semiconductors

BB171X by NXP Semiconductors is a single-config varactor diode with an abrupt variable capacitance classification. It operates in the very high frequency band and has a max reverse current of 0.01 uA. This diode is commonly used in applications requiring small outline packages and high operating temperatures up to 125 °C.

32 V

SINGLE

8.77 %

20.6

57 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

IEC-60134

32 V

.01 uA

30 V

YES

GULL WING

DUAL

ABRUPT

BB149,135 by NXP Semiconductors

BB149,135

NXP Semiconductors

BB149,135 by NXP Semiconductors is a variable capacitance diode designed for ultra-high frequency applications. It features a nominal capacitance of 18.75 pF, operates b/w -55 °C to 125 °C, and has a max reverse voltage of 30 V. Ideal for tuning circuits and RF applications, it comes in a compact surface mount package.

SINGLE

4 %

8.2

18.75 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

30 V

Varactors

YES

TIN

GULL WING

DUAL

BB833E6327HTSA1 by Infineon Technologies

BB833E6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

35 V

SINGLE

8.11 %

11

9.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

S BAND

R-PDSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

YES

TIN

GULL WING

DUAL

BB545E7904HTSA1 by Infineon Technologies

BB545E7904HTSA1

Infineon Technologies

Infineon's BB545E7904HTSA1 is a single varactor diode with 20pF capacitance, ideal for ultra high frequency applications. With a temperature range of -55 to 150°C, it features gull wing terminals and silicon element material. This surface mount diode has a small outline package shape and is suitable for RF tuning in various electronic devices.

LOW INDUCTANCE

SINGLE

7.5 %

6.3

20 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

TIN

GULL WING

DUAL

BB639CE7904HTSA1 by Infineon Technologies

BB639CE7904HTSA1

Infineon Technologies

Infineon's BB639CE7904HTSA1 is a single varactor diode with 39pF capacitance, 35V breakdown voltage, and 9.5 capacitance ratio. Ideal for very high frequency applications in small outline packages, operating b/w -55°C to 150°C.

35 V

SINGLE

7.01 %

9.5

39 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

e3

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

TIN

GULL WING

DUAL

BB644E7904HTSA1 by Infineon Technologies

BB644E7904HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

30 V

SINGLE

6.59 %

11

41.8 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

e3

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

MATTE TIN

GULL WING

DUAL

BB669E7904HTSA1 by Infineon Technologies

BB669E7904HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

CAPACITANCE MATCHED TO 2%

SINGLE

9.33 %

14.5

56.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

GULL WING

DUAL

BB831E7904HTSA1 by Infineon Technologies

BB831E7904HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

CAPACITANCE MATCHED TO 3%

SINGLE

11.36 %

7.8

8.8 pF

SILICON

VARIABLE CAPACITANCE DIODE

L BAND

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

MATTE TIN

GULL WING

DUAL

BBY5803WE6327HTSA1 by Infineon Technologies

BBY5803WE6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

10 V

SINGLE

4.89 %

1.15

18.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G2

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

GULL WING

DUAL

HYPERABRUPT

BBY5805WH6327XTSA1 by Infineon Technologies

BBY5805WH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

10 V

COMMON CATHODE, 2 ELEMENTS

4.89 %

1.15

18.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

GULL WING

DUAL

HYPERABRUPT

BBY5806WH6327XTSA1 by Infineon Technologies

BBY5806WH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW INDUCTANCE

10 V

COMMON ANODE, 2 ELEMENTS

4.89 %

1.15

18.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

GULL WING

DUAL

HYPERABRUPT

BBY6605WH6327XTSA1 by Infineon Technologies

BBY6605WH6327XTSA1

Infineon Technologies

Infineon's BBY6605WH6327XTSA1 is a varactor diode with common cathode, 2 elements. It has a nominal capacitance of 68.7 pF and min breakdown voltage of 12 V. Ideal for applications requiring hyperabrupt variable capacitance diodes in small outline packages.

HIGH Q

12 V

COMMON CATHODE, 2 ELEMENTS

4 %

5

68.7 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

TIN

GULL WING

DUAL

HYPERABRUPT

BB135,135 by NXP Semiconductors

BB135,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

30 V

SINGLE

8.9

19.25 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

30 V

.01 uA

30 V

Varactors

YES

TIN

GULL WING

DUAL

30

BB148,135 by NXP Semiconductors

BB148,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

SINGLE

14.5

39.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

30 V

.01 uA

30 V

Varactors

YES

TIN

GULL WING

DUAL

BB149,115 by NXP Semiconductors

BB149,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

SINGLE

4 %

8.2

18.75 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

30 V

Varactors

YES

TIN

GULL WING

DUAL

BB149A,115 by NXP Semiconductors

BB149A,115

NXP Semiconductors

BB149A,115 by NXP Semiconductors is a varactor diode with a capacitance of 19.74 pF and breakdown voltage of 30 V. It operates in the ultra high frequency band, suitable for applications requiring variable capacitance such as tuning circuits in RF communication systems. The diode comes in a small outline package with gull wing terminals, making it ideal for surface mount designs.

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

30 V

SINGLE

7.7 %

8.45

19.74 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

30 V

Varactors

YES

TIN

GULL WING

DUAL

BB152,115 by NXP Semiconductors

BB152,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

SINGLE

8.77 %

20.6

57 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

35 V

Varactors

YES

TIN

GULL WING

DUAL

BB153,115 by NXP Semiconductors

BB153,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

SINGLE

10 %

13.5

38.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

32 V

Varactors

YES

TIN

GULL WING

DUAL

BB153,135 by NXP Semiconductors

BB153,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

2% MATCHED SETS OF 10 DIODES ARE AVAILABLE

32 V

SINGLE

10 %

13.5

38.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

32 V

Varactors

YES

TIN

GULL WING

DUAL

BB156,115 by NXP Semiconductors

BB156,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

10 %

2.7

16 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

10 V

Varactors

YES

TIN

GULL WING

DUAL

30

BB156,135 by NXP Semiconductors

BB156,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

10 %

2.7

16 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

10 V

Varactors

YES

Tin (Sn)

GULL WING

DUAL

30

BB200,215 by NXP Semiconductors

BB200,215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

18 V

COMMON CATHODE, 2 ELEMENTS

6 %

5

70 pF

SILICON

VARIABLE CAPACITANCE DIODE

TO-236AB

R-PDSO-G3

e3

2

3

85 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

YES

TIN

GULL WING

DUAL

BB804,215 by NXP Semiconductors

BB804,215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

18 V

COMMON CATHODE, 2 ELEMENTS

5.08 %

1.65

44.25 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

2

3

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

18 V

.02 uA

16 V

Varactors

YES

MATTE TIN

GULL WING

DUAL

BBY31,215 by NXP Semiconductors

BBY31,215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

30 V

SINGLE

11.11 %

16.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G3

e3

1

3

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

Not Qualified

.01 uA

28 V

YES

TIN

GULL WING

DUAL

NOT SPECIFIED

BB208-03,135 by NXP Semiconductors

BB208-03,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

3.7

10.1 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

10 V

Varactors

YES

TIN

GULL WING

DUAL

30

BB208-03,115 by NXP Semiconductors

BB208-03,115

NXP Semiconductors

BB208-03,115 by NXP Semiconductors is a varactor diode with a capacitance ratio of 3.7 and a max reverse voltage of 10V. It operates b/w -55°C to 125°C, has a nominal capacitance of 10.1pF, and is designed for applications requiring variable capacitance diodes in small outline packages.

SINGLE

3.7

10.1 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

10 V

Varactors

YES

TIN

GULL WING

DUAL

30

BB207,235 by NXP Semiconductors

BB207,235

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON CATHODE, 2 ELEMENTS

6.17 %

2.6

81 pF

SILICON

VARIABLE CAPACITANCE DIODE

TO-236AB

R-PDSO-G3

e3

1

2

3

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

15 V

Varactors

YES

TIN

GULL WING

DUAL

30

MMBV109LT1G by Onsemi

MMBV109LT1G

Onsemi

MMBV109LT1G by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 29 pF, and breakdown voltage of 30 V. It is ideal for very high frequency applications due to its hyperabrupt variable capacitance diode classification and small outline package style.

HIGH RELIABILITY

30 V

SINGLE

10.34 %

5

29 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.2 W

Not Qualified

200

30 V

Varactors

YES

TIN

GULL WING

DUAL

30

HYPERABRUPT

MMBV409LT1G by Onsemi

MMBV409LT1G

Onsemi

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH Q, HIGH RELIABILITY

20 V

SINGLE

10.34 %

1.5

29 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.225 W

Not Qualified

200

20 V

Varactors

YES

TIN

GULL WING

DUAL

30

HYPERABRUPT

MMBV105GLT1G by Onsemi

MMBV105GLT1G

Onsemi

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH RELIABILITY

30 V

SINGLE

30.23 %

4

2.15 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.225 W

Not Qualified

250

30 V

Varactors

YES

TIN

GULL WING

DUAL

30

HYPERABRUPT

MMBV3102LT1G by Onsemi

MMBV3102LT1G

Onsemi

MMBV3102LT1G by Onsemi is a single hyperabrupt varactor diode with 22pF nominal capacitance, suitable for very high frequency applications. It has a min breakdown voltage of 30V and operates at a max temperature of 125 °C. This small outline diode in gull wing terminal form is surface mountable and has a power dissipation of 0.225W.

HIGH Q, HIGH RELIABILITY

30 V

SINGLE

11.1 %

4.5

22 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.225 W

Not Qualified

200

30 V

Varactors

YES

TIN

GULL WING

DUAL

30

HYPERABRUPT

MMBV809LT1G by Onsemi

MMBV809LT1G

Onsemi

MMBV809LT1G by Onsemi is a single hyperabrupt varactor diode with a min quality factor of 75 and nominal capacitance of 5.3 pF. It operates in the ultra high frequency band, suitable for applications requiring variable capacitance such as RF tuning circuits.

HIGH RELIABILITY

20 V

SINGLE

15.09 %

1.8

5.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.225 W

Not Qualified

75

20 V

Varactors

YES

TIN

GULL WING

DUAL

30

HYPERABRUPT

MMBV609LT1G by Onsemi

MMBV609LT1G

Onsemi

MMBV609LT1G by Onsemi is a Varactor Diode with 29pF nominal capacitance, 20V breakdown voltage, and 250 min quality factor. It is ideal for Very High Frequency applications due to its Hyperabrupt diode classification and common cathode configuration. The diode's small outline package and gull wing terminal form make it suitable for surface mount designs requiring high-frequency performance.

HIGH Q

20 V

COMMON CATHODE, 2 ELEMENTS

10.34 %

1.8

29 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

2

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.225 W

Not Qualified

250

20 V

Varactors

YES

TIN

GULL WING

DUAL

30

HYPERABRUPT

MMBV109LT3G by Onsemi

MMBV109LT3G

Onsemi

MMBV109LT3G by Onsemi is a Varactor Diode with a Min Quality Factor of 200, Nominal Capacitance of 29 pF, and Breakdown Voltage of 30 V. Ideal for Very High Frequency applications due to its Variable Capacitance nature and small outline package style.

HIGH RELIABILITY

30 V

SINGLE

10.34 %

5

29 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.2 W

Not Qualified

200

30 V

Varactors

YES

TIN

GULL WING

DUAL

MMBV2101LT1G by Onsemi

MMBV2101LT1G

Onsemi

MMBV2101LT1G by Onsemi is a Varactor Diode with 6.8pF capacitance, 30V breakdown voltage, and 450 min quality factor. Ideal for high frequency to ultra-high frequency applications due to its abrupt variable capacitance diode classification. It comes in a small outline package with gull wing terminals for surface mount assembly.

HIGH Q, HIGH RELIABILITY

30 V

SINGLE

10 %

2.5

6.8 pF

SILICON

VARIABLE CAPACITANCE DIODE

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.225 W

Not Qualified

450

30 V

Varactors

YES

TIN

GULL WING

DUAL

30

ABRUPT

MMBV2107LT1G by Onsemi

MMBV2107LT1G

Onsemi

MMBV2107LT1G by Onsemi is a varactor diode with a min quality factor of 350, ideal for high frequency to ultra high frequency applications. It has a nominal capacitance of 22 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations.

HIGH Q, HIGH RELIABILITY

30 V

SINGLE

10 %

2.5

22 pF

SILICON

VARIABLE CAPACITANCE DIODE

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.225 W

Not Qualified

350

30 V

Varactors

YES

TIN

GULL WING

DUAL

30

ABRUPT

MMBV2108LT1G by Onsemi

MMBV2108LT1G

Onsemi

MMBV2108LT1G by Onsemi is a varactor diode with a min quality factor of 300, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 27 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations.

HIGH Q, HIGH RELIABILITY

30 V

SINGLE

10 %

2.5

27 pF

SILICON

VARIABLE CAPACITANCE DIODE

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.225 W

Not Qualified

300

30 V

Varactors

YES

TIN

GULL WING

DUAL

30

ABRUPT

MMBV432LT1G by Onsemi

MMBV432LT1G

Onsemi

MMBV432LT1G by Onsemi is a varactor diode with common cathode, 2 elements configuration. It has a min quality factor of 100 and nominal capacitance of 45.55 pF, suitable for very high frequency applications like RF tuning circuits.

HIGH Q, 1% MATCHING GUARANTEED

14 V

COMMON CATHODE, 2 ELEMENTS

5.6 %

1.5

45.55 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

2

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.225 W

Not Qualified

100

14 V

Varactors

YES

TIN

GULL WING

DUAL

30

ABRUPT

MMBV809LT3G by Onsemi

MMBV809LT3G

Onsemi

MMBV809LT3G by Onsemi is a varactor diode with a min quality factor of 75, ideal for ultra high frequency applications. It features a nominal capacitance of 5.3 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations. The diode's hyperabrupt variable capacitance classification and gull wing terminal form enhance its performance in high-frequency circuits.

HIGH RELIABILITY

20 V

SINGLE

15.09 %

1.8

5.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

TO-236AB

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.225 W

Not Qualified

75

20 V

Varactors

YES

TIN

GULL WING

DUAL

HYPERABRUPT

MMVL109T1G by Onsemi

MMVL109T1G

Onsemi

MMVL109T1G by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 29 pF, and breakdown voltage of 30 V. It is designed for very high frequency applications in small outline packages, suitable for surface mount assembly.

HIGH RELIABILITY

30 V

SINGLE

10.34 %

5

29 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.2 W

Not Qualified

200

30 V

Varactors

YES

TIN

GULL WING

DUAL

30

MMVL3102T1G by Onsemi

MMVL3102T1G

Onsemi

MMVL3102T1G by Onsemi is a varactor diode with a min quality factor of 200, suitable for very high frequency applications. It has a nominal capacitance of 22 pF and a breakdown voltage of 30 V, making it ideal for small outline packages in surface mount configurations.

HIGH RELIABILITY

30 V

SINGLE

11.11 %

4.5

22 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.2 W

Not Qualified

200

30 V

Varactors

YES

TIN

GULL WING

DUAL

30

MMVL809T1G by Onsemi

MMVL809T1G

Onsemi

MMVL809T1G by Onsemi is a varactor diode with 5.3pF capacitance, 20V breakdown voltage, and 0.2W power dissipation. Ideal for ultra high frequency applications, it features a small outline package and gull wing terminals for surface mount assembly.

HIGH RELIABILITY

20 V

SINGLE

15.09 %

1.8

5.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.2 W

Not Qualified

20 V

Varactors

YES

TIN

GULL WING

DUAL

30

MMBV2105LT1G by Onsemi

MMBV2105LT1G

Onsemi

MMBV2105LT1G by Onsemi is a varactor diode with a min quality factor of 400, nominal capacitance of 15 pF, and max operating temperature of 150 °C. It is used in applications requiring variable capacitance such as RF tuning circuits.

HIGH Q, HIGH RELIABILITY

30 V

SINGLE

10 %

2.5

15 pF

SILICON

VARIABLE CAPACITANCE DIODE

TO-236AB

R-PDSO-G3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.225 W

Not Qualified

400

30 V

Varactors

YES

TIN

GULL WING

DUAL

30

SMV2023-011LF by Skyworks Solutions

SMV2023-011LF

Skyworks Solutions

SMV2023-011LF by Skyworks Solutions is a single hyperabrupt varactor diode with 4.9 pF capacitance, 22 V breakdown voltage, and 500 min quality factor. It's used in RF applications for frequency tuning due to its small outline package and high capacitance ratio.

LOW NOISE

22 V

SINGLE

10.2 %

4.2

4.9 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

Not Qualified

500

22 V

Varactors

YES

Matte Tin (Sn)

GULL WING

DUAL

40

HYPERABRUPT

1SV228(TPH3,F) by Toshiba

1SV228(TPH3,F)

Toshiba

The Toshiba 1SV228(TPH3,F) Varactor Diode features a common cathode configuration with 2 elements, suitable for very high frequency applications. With a max operating temperature of 125°C, it offers a nominal capacitance of 30.5 pF and a min breakdown voltage of 15V, making it ideal for small outline surface mount designs.

15 V

COMMON CATHODE, 2 ELEMENTS

6.56 %

2.1

30.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

VERY HIGH FREQUENCY

R-PDSO-G3

2

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

YES

GULL WING

DUAL

NOT SPECIFIED

ABRUPT

BBY5305WE6327HTSA1 by Infineon Technologies

BBY5305WE6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

6 V

COMMON CATHODE, 2 ELEMENTS

9.43 %

1.8

5.3 pF

SILICON

VARIABLE CAPACITANCE DIODE

ULTRA HIGH FREQUENCY

R-PDSO-G3

2

3

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

GULL WING

DUAL

HYPERABRUPT

BBY6605WE6327HTSA1 by Infineon Technologies

BBY6605WE6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH Q

12 V

COMMON CATHODE, 2 ELEMENTS

4 %

5

68.7 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

GULL WING

DUAL

HYPERABRUPT

BBY5705WE6327HTSA1 by Infineon Technologies

BBY5705WE6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

HIGH Q, LOW INDUCTANCE

10 V

COMMON CATHODE, 2 ELEMENTS

5.98 %

3

17.5 pF

SILICON

VARIABLE CAPACITANCE DIODE

R-PDSO-G3

2

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

YES

GULL WING

DUAL

NOT SPECIFIED

HYPERABRUPT