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BB639CE7904HTSA1

Infineon Technologies

BB639CE7904HTSA1 by Infineon Technologies

Infineon's BB639CE7904HTSA1 is a single varactor diode with 39pF capacitance, 35V breakdown voltage, and 9.5 capacitance ratio. Ideal for very high frequency applications in small outline packages, operating b/w -55°C to 150°C.

Median Price

$0.055

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 22 parts In-Stock

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$0.055

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Chip Stock

USA . 112,300 parts In-Stock

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Vyrian

USA . 7,756 parts In-Stock

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VNN

France . 2,048 parts In-Stock

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Digiode

USA . 921 parts In-Stock

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921

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,082 parts In-Stock

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$0.010

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1,082

$0.010

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Modulus Dynamics

Lithuania . 27,427 parts In-Stock

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$0.035

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$0.034

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$0.032

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27,427

$0.035

$0.034

$0.032

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Netroflash

USA . 500 parts In-Stock

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$0.055

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$0.052

10k+ parts

$0.051

500

$0.055

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$0.052

$0.051

AZTECH Wire

Italy . 737 parts In-Stock

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$19.767

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737

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Perfect Parts

USA . 91,504 parts In-Stock

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Microchip USA

USA . 412 parts In-Stock

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Corphita

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Overview

Unlock the potential of your electronic devices with the BB639CE7904HTSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-quality varactor diodes that offer exceptional performance in very high-frequency applications. With a nominal capacitance of 39pF and a minimum breakdown voltage of 35V, this variable capacitance diode provides precise tuning for optimal signal processing. Whether you're designing cutting-edge communication systems or advanced radar technology, the BB639CE7904HTSA1 ensures reliability and efficiency, making it the perfect choice for your next project. Elevate your designs with the unmatched value and benefits of Infineon's varactor diodes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the diode, ensuring a longer lifespan and reliable performance.

Frequency Band: VERY HIGH FREQUENCY

Ideal for applications requiring high frequency performance, making it suitable for advanced electronic devices.

Surface Mount: YES

Easy to install and replace, perfect for compact designs and automated assembly processes.

Maximum Operating Temperature: 150 °C

Capable of withstanding high temperatures, making it versatile for various operating conditions.

Nominal Diode Capacitance: 39 pF

Provides a precise and stable capacitance value, ensuring consistent performance in tuning applications.

Technical Specifications

Varactor Diodes BB639CE7904HTSA1 attributes and parameters. Explore more Varactor Diodes devices from Infineon Technologies

Specs

Minimum Breakdown Voltage:

35 V

Config:

SINGLE

Diode Cap Tolerance:

7.01 %

Minimum Diode Capacitance Ratio:

9.5

Nominal Diode Capacitance:

39 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

BB639CE7904HTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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