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BB639C

Infineon Technologies

BB639C by Infineon Technologies

Infineon's BB639C is a single varactor diode with 39pF capacitance, 35V breakdown voltage, and 9.5 min capacitance ratio. Ideal for very high frequency applications, it comes in a small outline package suitable for surface mount technology.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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VNN

France . 4,755 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,550 parts In-Stock

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Vyrian

USA . 822 parts In-Stock

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Digiode

USA . 62 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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Modulus Dynamics

Lithuania . 23,864 parts In-Stock

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$0.129

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$0.124

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$0.119

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Ampacity Inc.

Singapore . 187 parts In-Stock

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$2.010

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AZTECH Wire

Italy . 366 parts In-Stock

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$17.413

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Andel Nordic

Denmark . 4,398 parts In-Stock

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$34.900

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$24.433

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A-Z Elektronik GmbH

Germany . 5,039 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,359 parts In-Stock

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Corphita

USA . 275 parts In-Stock

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Bastille Electronics

Australia . 10 parts In-Stock

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Overview

Unlock the potential of your next project with the BB639C Varactor Diode by Infineon Technologies. Known for their high-quality components, Infineon Technologies delivers reliable products that cater to very high-frequency applications. The BB639C offers a nominal diode capacitance of 39 pF and a minimum breakdown voltage of 35 V, making it an ideal choice for projects requiring variable capacitance diodes. With its small outline package style and gull wing terminal form, this diode is easy to integrate into your designs. Experience the value and benefits that the BB639C brings to your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers durability and heat resistance, making it a reliable choice for various applications.

Config: SINGLE

The single configuration simplifies installation and integration, enhancing ease of use for users.

Frequency Band: VERY HIGH FREQUENCY

With a very high frequency band, this varactor diode is suitable for high-performance electronic systems.

Surface Mount: YES

This surface mount option allows for efficient PCB assembly and space-saving design.

Package Shape: RECTANGULAR

The rectangular shape enables easy placement and soldering on the circuit board.

No. of Terminals: 2

Having two terminals simplifies the connection process, making it user-friendly.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space, making it ideal for compact electronic devices.

Terminal Position: DUAL

Dual terminal positions provide flexibility in circuit configuration, offering versatile usage options.

Nominal Diode Capacitance: 39 pF

The 39 pF capacitance ensures precise signal control and stability in high-frequency applications.

Minimum Breakdown Voltage: 35 V

With a minimum breakdown voltage of 35 V, this diode offers reliable protection against voltage surges.

Diode Type: VARIABLE CAPACITANCE DIODE

The variable capacitance diode allows for adjustable capacitance, providing tuning flexibility in electronic circuits.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy and secure soldering onto the PCB.

Maximum Repetitive Peak Reverse Voltage: 30 V

This diode can handle a maximum repetitive peak reverse voltage of 30 V, ensuring robust performance in challenging conditions.

Diode Cap Tolerance: 7.01 %

The 7.01% capacitance tolerance ensures accuracy in signal processing and consistency in performance.

Diode Element Material: SILICON

Silicon material offers high temperature tolerance and reliability, ensuring longevity and performance stability.

Minimum Diode Capacitance Ratio: 9.5

The minimum capacitance ratio of 9.5 provides precise control over signal modulation, making it suitable for demanding applications.

Technical Specifications

Varactor Diodes BB639C attributes and parameters. Explore more Varactor Diodes devices from Infineon Technologies

Specs

Minimum Breakdown Voltage:

35 V

Config:

SINGLE

Diode Cap Tolerance:

7.01 %

Minimum Diode Capacitance Ratio:

9.5

Nominal Diode Capacitance:

39 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

BB639C Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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