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BOTTOM Transient Suppression Devices 134

Transient Suppression Devices
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Maximum Breakdown Voltage Minimum Breakdown Voltage Nominal Breakdown Voltage Case Connection Maximum Clamping Voltage Config Minimum Diode Capacitance Diode Element Material Diode Type Maximum Dynamic Impedance Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Reverse Power Dissipation No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity Maximum Power Dissipation Qualification Reference Standard Nominal Reference Voltage Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Maximum Voltage Tolerance Working Test Current
DESD6V8DLP-7B by Diodes Incorporated

DESD6V8DLP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW CAPACITANCE

7.2 V

6.4 V

6.8 V

ANODE

COMMON ANODE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N3

e4

1

70 W

2

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

UNIDIRECTIONAL

.385 W

Not Qualified

5.25 V

Transient Suppressors

YES

AVALANCHE

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

DESD6V8DLP-7 by Diodes Incorporated

DESD6V8DLP-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW CAPACITANCE

7.2 V

6.4 V

6.8 V

ANODE

COMMON ANODE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N3

e4

1

70 W

2

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

UNIDIRECTIONAL

.385 W

Not Qualified

5.25 V

Transient Suppressors

YES

AVALANCHE

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

ESDAXLC4-1BF3 by STMicroelectronics

ESDAXLC4-1BF3

STMicroelectronics

ESDAXLC4-1BF3 by STMicroelectronics is a single bidirectional avalanche diode with 5.5V breakdown voltage, 55W peak power dissipation, and 10V clamping voltage. It is used for transient suppression in electronic circuits, offering protection against voltage spikes during operation.

14.2 V

5.5 V

10 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBGA-B2

e1

55 W

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

GRID ARRAY

260

BIDIRECTIONAL

3 V

Transient Suppressors

YES

AVALANCHE

TIN SILVER COPPER

BALL

BOTTOM

30

ESD5V0H1U-02LS-E6327 by Infineon Technologies

ESD5V0H1U-02LS-E6327

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

200 V

40 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

e3

1

1

2

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

UNIDIRECTIONAL

AEC-Q101

5 V

Transient Suppressors

YES

AVALANCHE

MATTE TIN

NO LEAD

BOTTOM

LXES1UBAB1-007 by Murata Manufacturing

LXES1UBAB1-007

Murata Manufacturing

Murata's LXES1UBAB1-007 is a single avalanche diode with 18V breakdown voltage, suitable for transient suppression in electronics. With a unidirectional polarity and silicon diode element, it operates b/w -40 to 85 °C, meeting IEC-61000-4-2 standard. This chip carrier package has 2 terminals and is surface mountable.

18 V

18 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

1

2

85 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

UNIDIRECTIONAL

IEC-61000-4-2

17.5 V

Transient Suppressors

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD6116 by Onsemi

ESD6116

Onsemi

ESD6116 by Onsemi is a single TRANS VOLTAGE SUPPRESSOR DIODE with 16V breakdown voltage. It operates b/w -30 to 85 °C, complies with IEC-61000-4-2 standard, and has a max clamping voltage of 20V. Ideal for transient suppression in electronic circuits.

16 V

20 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

1.3 V

S-PBGA-B4

e1

1

1

4

85 Cel

-30 Cel

PLASTIC/EPOXY

SQUARE

GRID ARRAY

260

UNIDIRECTIONAL

IEC-61000-4-2

10 V

YES

AVALANCHE

TIN SILVER COPPER

BALL

BOTTOM

TPD6V8LP-7B by Diodes Incorporated

TPD6V8LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

7.2 V

6.4 V

6.8 V

19 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

e4

1

85 W

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

UNIDIRECTIONAL

.25 W

5 V

Transient Suppressors

YES

AVALANCHE

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

ESD3V3U1U-02LS-E6327 by Infineon Technologies

ESD3V3U1U-02LS-E6327

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

6 V

12 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

1

1

2

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

UNIDIRECTIONAL

5.3 V

Transient Suppressors

YES

AVALANCHE

NO LEAD

BOTTOM

ESD5V3U1U-02LRH-E6327 by Infineon Technologies

ESD5V3U1U-02LRH-E6327

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

6 V

6 V

15 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

1

1

2

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

UNIDIRECTIONAL

5.3 V

Transient Suppressors

YES

AVALANCHE

NO LEAD

BOTTOM

ESD5V3U1U-02LS-E6327 by Infineon Technologies

ESD5V3U1U-02LS-E6327

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

6 V

6 V

15 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

1

1

2

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

UNIDIRECTIONAL

5.3 V

Transient Suppressors

YES

AVALANCHE

NO LEAD

BOTTOM

ESD8V0L1B-02LRH-E6327 by Infineon Technologies

ESD8V0L1B-02LRH-E6327

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

8.5 V

26 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

1

1

2

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

BIDIRECTIONAL

14 V

Transient Suppressors

YES

AVALANCHE

NO LEAD

BOTTOM

ESD8V0L1B-02LRH-E6433 by Infineon Technologies

ESD8V0L1B-02LRH-E6433

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

8.5 V

26 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

1

1

2

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

BIDIRECTIONAL

14 V

Transient Suppressors

YES

AVALANCHE

NO LEAD

BOTTOM

ESD5V3U4UHDMIE6327XTSA1 by Infineon Technologies

ESD5V3U4UHDMIE6327XTSA1

Infineon Technologies

ESD5V3U4UHDMIE6327XTSA1 by Infineon is a transient suppression device with 4 common anode elements. It operates b/w -40°C to 125°C, has a breakdown voltage of 6V, and uses avalanche technology. Ideal for protecting sensitive electronics from voltage spikes in various applications.

6 V

ANODE

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N9

e4

1

4

9

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

UNIDIRECTIONAL

5.3 V

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

TPD2E007YFMTG4 by Texas Instruments

TPD2E007YFMTG4

Texas Instruments

TPD2E007YFMTG4 by Texas Instruments is a bidirectional avalanche diode with a 14V clamping voltage and 0.05uA reverse current. It is used for transient suppression in applications requiring protection against voltage spikes, with an operating temperature range of -40 to 85°C. The device comes in a square package shape and features bottom terminal position with tin silver copper finish.

14 V

14 V

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

S-XBGA-N4

e1

1

85 Cel

-40 Cel

UNSPECIFIED

SQUARE

260

BIDIRECTIONAL

13 V

.05 uA

Transient Suppressors

YES

AVALANCHE

TIN SILVER COPPER

NO LEAD

BOTTOM

30

CM6116 by Onsemi

CM6116

Onsemi

The Onsemi CM6116 is a single TRANS VOLTAGE SUPPRESSOR DIODE with 16V breakdown voltage, ideal for transient suppression. With a max clamping voltage of 20V and avalanche technology, it offers protection in various applications. Operating b/w -30 °C to 85°C, this device meets IEC-61000-4-2 standards and comes in a square grid array package.

16 V

20 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

1.3 V

S-PBGA-B4

1

4

85 Cel

-30 Cel

PLASTIC/EPOXY

SQUARE

GRID ARRAY

NOT SPECIFIED

UNIDIRECTIONAL

IEC-61000-4-2

10 V

YES

AVALANCHE

BALL

BOTTOM

NOT SPECIFIED

ESD5382MUT5G by Onsemi

ESD5382MUT5G

Onsemi

ESD5382MUT5G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 14.2V breakdown voltage, ideal for transient suppression applications. It features avalanche technology, 22V clamping voltage, and operates b/w -55 to 150 °C. Suitable for protecting sensitive electronics from ESD events per IEC-61000-4-2, 4-4 standards.

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

14.2 V

14.2 V

22 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

e4

1

1

2

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

UNIDIRECTIONAL

.3 W

IEC-61000-4-2, 4-4

3 V

Transient Suppressors

YES

AVALANCHE

Nickel/Palladium/Gold (Ni/Pd/Au)

NO LEAD

BOTTOM

NOT SPECIFIED

ESD207B102ELSE6327XTSA1 by Infineon Technologies

ESD207B102ELSE6327XTSA1

Infineon Technologies

Infineon's ESD207B102ELSE6327XTSA1 is a single bidirectional transient voltage suppressor diode with 3.3V max repetitive peak reverse voltage and avalanche technology. It operates b/w -40°C to 125°C, ideal for protecting electronic components in various applications requiring robust ESD protection.

3.65 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

e4

1

1

2

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

3.3 V

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD0P8RFLE6327XTSA1 by Infineon Technologies

ESD0P8RFLE6327XTSA1

Infineon Technologies

Infineon Technologies' ESD0P8RFLE6327XTSA1 is a Transient Suppression Device with separate configuration and 2 elements. It is surface mountable and has a rectangular package shape. With a max breakdown voltage of 15V, it is commonly used as a trans voltage suppressor diode in various applications.

15 V

12 V

SEPARATE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N4

e4

1

2

4

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

UNIDIRECTIONAL

50 V

Transient Suppressors

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD5V3L1U02LRHE6327XTSA1 by Infineon Technologies

ESD5V3L1U02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

6 V

6 V

10 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

1

2

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

UNIDIRECTIONAL

5.3 V

Transient Suppressors

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD5V3S1B02LRHE6327XTSA1 by Infineon Technologies

ESD5V3S1B02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

6 V

11 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

80 W

1

2

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

BIDIRECTIONAL

5.3 V

Transient Suppressors

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD8V0R1B02LRHE6327XTSA1 by Infineon Technologies

ESD8V0R1B02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

14 V

8.5 V

17 V

23 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

1

2

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

BIDIRECTIONAL

AEC-Q101

14 V

Transient Suppressors

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD8V0R1B02LSE6327XTSA1 by Infineon Technologies

ESD8V0R1B02LSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

14 V

8.5 V

17 V

23 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

1

2

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

BIDIRECTIONAL

AEC-Q101

14 V

Transient Suppressors

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD0P2RF02LRHE6327XTSA1 by Infineon Technologies

ESD0P2RF02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

7 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

BIDIRECTIONAL

5.3 V

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD0P2RF02LSE6327XTSA1 by Infineon Technologies

ESD0P2RF02LSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

7 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

BIDIRECTIONAL

5.3 V

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD0P4RFLE6327XTSA1 by Infineon Technologies

ESD0P4RFLE6327XTSA1

Infineon Technologies

ESD0P4RFLE6327XTSA1 by Infineon Tech: 2-element TRANS VOLTAGE SUPPRESSOR DIODE with 50V max reverse voltage, 6V clamping voltage. AVALANCHE tech for transient suppression in electronics, temp range -55 to 150 °C. Ideal for surface mount applications needing reliable ESD protection.

9 V

6 V

SEPARATE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N4

e4

1

2

4

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

UNIDIRECTIONAL

50 V

Transient Suppressors

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD102U2099ELE6327XTSA1 by Infineon Technologies

ESD102U2099ELE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: SQUARE;

SEPARATE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

S-PBCC-N4

2

4

125 Cel

-40 Cel

PLASTIC/EPOXY

SQUARE

CHIP CARRIER

NOT SPECIFIED

UNIDIRECTIONAL

3.3 V

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD102U405LE6327XTSA1 by Infineon Technologies

ESD102U405LE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 5; Surface Mount: YES; Package Shape: RECTANGULAR;

7.4 V

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N5

e4

1

750 W

4

5

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

UNIDIRECTIONAL

3.3 V

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD110B102ELSE6327XTSA1 by Infineon Technologies

ESD110B102ELSE6327XTSA1

Infineon Technologies

Infineon's ESD110B102ELSE6327XTSA1 is a single TRANS VOLTAGE SUPPRESSOR DIODE with 18.5V max repetitive peak reverse voltage and 44V clamping voltage. It operates b/w -40 to 125 °C, making it ideal for transient suppression in electronic devices. The chip carrier package with gold finish and bidirectional polarity enhances its performance in protecting against voltage spikes.

ULTRA LOW CAPACITANCE

29 V

44 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

e4

1

58 W

1

2

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

18.5 V

Transient Suppressors

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD18VU1B02LSE6327XTSA1 by Infineon Technologies

ESD18VU1B02LSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

ULTRA LOW CAPACITANCE

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

1

2

85 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

18.5 V

YES

AVALANCHE

NO LEAD

BOTTOM

ESD205B102ELSE6327XTSA1 by Infineon Technologies

ESD205B102ELSE6327XTSA1

Infineon Technologies

Infineon's ESD205B102ELSE6327XTSA1 is a single TRANS VOLTAGE SUPPRESSOR DIODE with 8V breakdown voltage and 30W peak power dissipation. Ideal for transient suppression in applications requiring bidirectional protection, such as consumer electronics and industrial equipment.

LOW CAPACITANCE

8 V

8.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

e4

30 W

1

2

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

5.5 V

Transient Suppressors

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD206B102ELSE6327XTSA1 by Infineon Technologies

ESD206B102ELSE6327XTSA1

Infineon Technologies

ESD206B102ELSE6327XTSA1 by Infineon is a SINGLE TRANS VOLTAGE SUPPRESSOR DIODE with 6-10V breakdown voltage, AVALANCHE technology, and bidirectional polarity. It is used for transient suppression in applications requiring protection against voltage spikes in the range of -55 to 125°C.

10 V

6 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

e4

1

1

2

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

5.5 V

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD3V3S1B02LRHE6327XTSA1 by Infineon Technologies

ESD3V3S1B02LRHE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

1

2

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

3.3 V

YES

AVALANCHE

NO LEAD

BOTTOM

ESD3V3U4ULCE6327XTSA1 by Infineon Technologies

ESD3V3U4ULCE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 9; Surface Mount: YES; Package Shape: RECTANGULAR;

11 V

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N9

e4

1

4

9

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

UNIDIRECTIONAL

3.3 V

Transient Suppressors

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD3V3XU1USE6327XTSA1 by Infineon Technologies

ESD3V3XU1USE6327XTSA1

Infineon Technologies

ESD3V3XU1USE6327XTSA1 by Infineon is a unidirectional Trans Voltage Suppressor Diode with 3.3V peak reverse voltage, operating from -40 to 125°C. It uses avalanche technology in a chip carrier package for surface mount applications, providing transient suppression in electronic circuits.

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

1

2

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

UNIDIRECTIONAL

3.3 V

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD5V3S1B02LSE6327XTSA1 by Infineon Technologies

ESD5V3S1B02LSE6327XTSA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

6 V

6 V

26 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

1

2

125 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

BIDIRECTIONAL

5.3 V

Transient Suppressors

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD5V5S1B02LRHE6327XTSA1 by Infineon Technologies

ESD5V5S1B02LRHE6327XTSA1

Infineon Technologies

Infineon's ESD5V5S1B02LRHE6327XTSA1 is a bidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 6-10V breakdown voltage, ideal for transient suppression. With 150W power dissipation and -55 to 125 °C operating range, it's suitable for protecting sensitive electronics in various applications.

10 V

6 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

150 W

1

2

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

BIDIRECTIONAL

5.5 V

YES

AVALANCHE

NO LEAD

BOTTOM

NOT SPECIFIED

ESD8V0L2B03LE6327XTMA1 by Infineon Technologies

ESD8V0L2B03LE6327XTMA1

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

8.5 V

8.5 V

26 V

SEPARATE, 2 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N3

e4

1

2

3

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

AEC-Q101

14 V

Transient Suppressors

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD112B102ELSE6327XTSA1 by Infineon Technologies

ESD112B102ELSE6327XTSA1

Infineon Technologies

Infineon's ESD112B102ELSE6327XTSA1 is a single bidirectional Trans Voltage Suppressor Diode with 7V breakdown voltage, ideal for transient suppression. With avalanche technology and silicon diode element, it operates b/w -55°C to 125°C. This chip carrier package has gold terminal finish and is surface mountable.

7 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

e4

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

5.3 V

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

ESD105B102ELSE6327XTSA1 by Infineon Technologies

ESD105B102ELSE6327XTSA1

Infineon Technologies

ESD105B102ELSE6327XTSA1 by Infineon Technologies is a single transient suppression device with a max breakdown voltage of 14V. It operates in temperatures ranging from -55°C to 125°C and has a bidirectional polarity with a max clamping voltage of 22V. This chip carrier package diode is ideal for protecting electronic circuits from voltage spikes in various applications.

14 V

22 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

5.5 V

Transient Suppressors

YES

AVALANCHE

NO LEAD

BOTTOM

ESD300B102LRHE6327XTSA1 by Infineon Technologies

ESD300B102LRHE6327XTSA1

Infineon Technologies

ESD300B102LRHE6327XTSA1 by Infineon is a single bidirectional avalanche diode with 3.3V max repetitive peak reverse voltage and 260W max non-repetitive peak reverse power dissipation. It is used for transient suppression in applications requiring protection against voltage spikes, with an operating temperature range of -55 to 125°C.

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-XBCC-N2

e4

1

260 W

1

2

125 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

BIDIRECTIONAL

3.3 V

YES

AVALANCHE

GOLD

NO LEAD

BOTTOM

USBULC6-2F7 by STMicroelectronics

USBULC6-2F7

STMicroelectronics

USBULC6-2F7 by STMicroelectronics is a single transient suppression device with a max power dissipation of 50W. It has a breakdown voltage of 7.25V and operates in temperatures ranging from -40 to 150 °C. This diode type trans voltage suppressor diode is ideal for protecting electronic circuits from voltage spikes in various applications.

HIGH RELIABILITY

9 V

5.5 V

7.25 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

S-PBGA-B4

50 W

1

4

150 Cel

-40 Cel

PLASTIC/EPOXY

SQUARE

GRID ARRAY

NOT SPECIFIED

UNIDIRECTIONAL

IEC61000-4-2

.07 uA

3 V

YES

AVALANCHE

BALL

BOTTOM

NOT SPECIFIED

TPD2E007YFMRG4 by Texas Instruments

TPD2E007YFMRG4

Texas Instruments

TPD2E007YFMRG4 by Texas Instruments is a single transient suppression device with a breakdown voltage of 14V. It features a max reverse current of 0.05uA and operates in temperatures ranging from -40°C to 85°C. Ideal for applications requiring protection against voltage transients, it complies with IEC-61000-4-2 and 4-5 standards.

14 V

14 V

14 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

S-XBCC-N4

e1

1

4

4

85 Cel

-40 Cel

UNSPECIFIED

SQUARE

CHIP CARRIER

260

BIDIRECTIONAL

.27 W

Not Qualified

IEC-61000-4-2, 4-5

13 V

.05 uA

Transient Suppressors

YES

AVALANCHE

Tin/Silver/Copper (Sn/Ag/Cu)

NO LEAD

BOTTOM

NOT SPECIFIED

ESDALC6V1F2 by STMicroelectronics

ESDALC6V1F2

STMicroelectronics

ESDALC6V1F2 by STMicroelectronics is a unidirectional transient voltage suppressor diode ideal for protecting sensitive electronics. It features a breakdown voltage of 6.65 V, max power dissipation of 25 W, and operates up to 125 °C. Its compact design suits surface mount applications effectively.

7.2 V

6.1 V

6.65 V

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBGA-B5

e3

1

25 W

4

5

125 Cel

PLASTIC/EPOXY

RECTANGULAR

GRID ARRAY

UNIDIRECTIONAL

Not Qualified

Transient Suppressors

YES

AVALANCHE

MATTE TIN

BALL

BOTTOM

ESDALC6V1C2 by STMicroelectronics

ESDALC6V1C2

STMicroelectronics

ESDALC6V1C2 by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for robust protection. It features a breakdown voltage of 6.65 V, max reverse power dissipation of 25 W, and comes in a compact rectangular package. Ideal for safeguarding sensitive electronics from voltage spikes.

7.2 V

6.1 V

6.65 V

COMMON ANODE, 4 ELEMENTS

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBGA-B5

25 W

4

5

PLASTIC/EPOXY

RECTANGULAR

GRID ARRAY

NOT SPECIFIED

UNIDIRECTIONAL

Not Qualified

Transient Suppressors

YES

AVALANCHE

BALL

BOTTOM

NOT SPECIFIED

USBULC6-2F3 by STMicroelectronics

USBULC6-2F3

STMicroelectronics

USBULC6-2F3 by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for robust protection in electronic circuits. It features a breakdown voltage of 7.5 V, max power dissipation of 60 W, and operates up to 125 °C. Ideal for safeguarding sensitive components from voltage spikes.

HIGH RELIABILITY

9 V

6 V

7.5 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBGA-B4

e3

1

60 W

1

4

125 Cel

PLASTIC/EPOXY

RECTANGULAR

GRID ARRAY

UNIDIRECTIONAL

Not Qualified

Transient Suppressors

YES

AVALANCHE

MATTE TIN

BALL

BOTTOM

DSILC6-4F2 by STMicroelectronics

DSILC6-4F2

STMicroelectronics

DSILC6-4F2 by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for surface mount applications. It features a max reverse power dissipation of 120 W, breakdown voltage of 6 V, and operates up to 125 °C. Ideal for protecting sensitive electronics from voltage spikes.

HIGH RELIABILITY

6 V

6 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

S-PBGA-B6

3

120 W

1

6

125 Cel

PLASTIC/EPOXY

SQUARE

GRID ARRAY

UNIDIRECTIONAL

Not Qualified

5 V

Transient Suppressors

YES

AVALANCHE

BALL

BOTTOM

IP4085CX4/LF,135 by NXP Semiconductors

IP4085CX4/LF,135

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: BOTTOM; Terminal Form: BALL; No. of Terminals: 4; Surface Mount: YES; Package Shape: SQUARE;

16 V

16 V

20 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

S-PBGA-B4

1

4

PLASTIC/EPOXY

SQUARE

GRID ARRAY

UNIDIRECTIONAL

1 W

Not Qualified

Transient Suppressors

YES

AVALANCHE

BALL

BOTTOM

ESDALC6V1-1BM2 by STMicroelectronics

ESDALC6V1-1BM2

STMicroelectronics

ESDALC6V1-1BM2 by STMicroelectronics is a bidirectional transient voltage suppressor diode designed for robust protection. It features a max reverse power dissipation of 140 W, breakdown voltage of 8 V, and operates up to 125 °C. Ideal for safeguarding sensitive electronics in compact applications.

HIGH RELIABILITY

8 V

6.1 V

8 V

SINGLE

SILICON

TRANS VOLTAGE SUPPRESSOR DIODE

R-PBCC-N2

e4

3

140 W

1

2

125 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

BIDIRECTIONAL

Not Qualified

Transient Suppressors

YES

AVALANCHE

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30