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LXES1UBAB1-007

Murata Manufacturing

LXES1UBAB1-007 by Murata Manufacturing

Murata's LXES1UBAB1-007 is a single avalanche diode with 18V breakdown voltage, suitable for transient suppression in electronics. With a unidirectional polarity and silicon diode element, it operates b/w -40 to 85 °C, meeting IEC-61000-4-2 standard. This chip carrier package has 2 terminals and is surface mountable.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 13,061 parts In-Stock

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13,061

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Component Sense

UK . 3,293 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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100

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Distributors (Availability)

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AZTECH Wire

Italy . 838 parts In-Stock

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$6.818

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838

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Perfect Parts

USA . 22,412 parts In-Stock

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22,412

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Kepictronics

USA . 10,000 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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8,000

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Aranea Global

USA . 1,000 parts In-Stock

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Overview

Looking for reliable transient suppression devices? Look no further than the LXES1UBAB1-007 by Murata Manufacturing. With a reputation for quality and excellence, Murata delivers superior products that offer unmatched protection against voltage surges. Whether you're in the automotive, industrial, or consumer electronics industry, this single-configured chip carrier is the perfect solution for safeguarding your equipment. Trust Murata to provide you with the value, benefits, and advantages you need to keep your devices safe and running smoothly.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the device, making it suitable for various environments.

Config: SINGLE

This single configuration simplifies installation and maintenance, reducing complexity for users.

Surface Mount: YES

The surface mount capability allows for easy and secure mounting on PCBs, saving space and simplifying manufacturing processes.

Nominal Breakdown Voltage: 18 V

With a high nominal breakdown voltage, this device offers reliable protection against voltage spikes and surges.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into existing circuit designs and layouts.

No. of Terminals: 2

The two terminals provide a simple and straightforward connection interface for users.

Package Style (Meter): CHIP CARRIER

The chip carrier package style offers compact size and efficient heat dissipation for improved performance.

Maximum Operating Temperature: 85 °C

This high operating temperature range ensures the device can withstand harsh conditions without compromising functionality.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the device to function effectively in cold environments.

Terminal Position: BOTTOM

The bottom terminal position simplifies installation and ensures a secure connection in various applications.

Minimum Breakdown Voltage: 18 V

The minimum breakdown voltage matches the nominal voltage, providing consistent and reliable protection.

Reference Standard: IEC-61000-4-2

This adherence to international standards ensures the device meets quality and safety requirements.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

This diode type effectively suppresses voltage spikes, protecting connected components.

Technology: AVALANCHE

The avalanche technology enhances the device's performance and efficiency in handling transient voltage events.

Terminal Form: NO LEAD

The no lead terminal form simplifies installation and reduces the risk of connection issues.

Maximum Repetitive Peak Reverse Voltage: 17.5 V

The maximum repetitive peak reverse voltage rating ensures long-term reliability and protection against reverse voltage conditions.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that voltage spikes are effectively suppressed in one direction.

Diode Element Material: SILICON

The silicon diode element material offers high performance and durability for effective transient suppression.

Technical Specifications

Transient Suppression Devices LXES1UBAB1-007 attributes and parameters. Explore more Transient Suppression Devices devices from Murata Manufacturing

Specs

Minimum Breakdown Voltage:

18 V

Nominal Breakdown Voltage:

18 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

17.5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

LXES1UBAB1-007 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Murata Manufacturing

Murata Manufacturing Co., Ltd. is a Japanese electronics manufacturer founded in 1944 by Akira Murata. Through its expansive supply chain network and innovative product portfolio, Murata designs and manufactures a wide variety of electronic components including capacitors, inductor coils, buzzers, sensors and more for applications in the automotive, medical, industrial and consumer sectors. Based in Nagaokakyo City in Kyoto Prefecture of Japan, Murata operates factories around the world with other facilities located throughout Asia Pacific region such as China and Thailand; North America; Europe; Latin America; Middle East & Africa; as well as Oceania.

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Management team

Chairman of the Board

Tsuneo Murata

President

Norio Nakajima

Senior Executive VP, Board Member

Hiroshi Iwatsubo

Manufacturer fab locations 8

Fab name Location Fab Initiation Wafer Capacity

Murata Integrated Passive Solution

Fabrication

Fab Initiation

1989

France

Caen

Wafer Capacity

12,500

1989

12,500

Sendai Fab

Fabrication

Fab Initiation

2008

Japan

Sendai

Wafer Capacity

20,000

2008

20,000

Kanazawa - Fab 2

Fabrication

Fab Initiation

2016

Japan

Hakusan

Wafer Capacity

10,000

2016

10,000

Komoro

Fabrication

Fab Initiation

1980

Japan

Komoro

Wafer Capacity

1980

Yasu Plant

Fabrication

Fab Initiation

1987

Japan

Yasu

Wafer Capacity

14,500

1987

14,500

Kanazawa Plant

Fabrication

Fab Initiation

1985

Japan

Hakusan

Wafer Capacity

5,000

1985

5,000

Vantaa - Fab 1

Fabrication

Fab Initiation

1998

Finland

Vantaa

Wafer Capacity

5,000

1998

5,000

Vantaa - Fab 2

Fabrication

Fab Initiation

2006

Finland

Vantaa

Wafer Capacity

12,000

2006

12,000

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