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ESD300B102LRHE6327XTSA1

Infineon Technologies

ESD300B102LRHE6327XTSA1 by Infineon Technologies

ESD300B102LRHE6327XTSA1 by Infineon is a single bidirectional avalanche diode with 3.3V max repetitive peak reverse voltage and 260W max non-repetitive peak reverse power dissipation. It is used for transient suppression in applications requiring protection against voltage spikes, with an operating temperature range of -55 to 125°C.

Median Price

$0.087

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 59 parts In-Stock

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$0.087

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Vyrian

USA . 2,074 parts In-Stock

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Digiode

USA . 334 parts In-Stock

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 18,258 parts In-Stock

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$0.052

100+ parts

$0.050

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$0.048

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Aranea Global

USA . 2,000 parts In-Stock

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$0.085

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$0.082

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Argo Parts USA

USA . 3,004 parts In-Stock

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$0.087

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$0.084

3,004

$0.087

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Continental Prestige Electronics

USA . 2,996 parts In-Stock

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$0.087

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$0.085

2,996

$0.087

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$0.085

Ampacity Inc.

Singapore . 1,206 parts In-Stock

1+ parts

$3.010

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AZTECH Wire

Italy . 492 parts In-Stock

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$18.294

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Authorized Procurement Solutions

USA . 20,000 parts In-Stock

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Perfect Parts

USA . 2,240 parts In-Stock

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Corphita

USA . 303 parts In-Stock

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Overview

Looking for top-quality transient suppression devices? Look no further than the ESD300B102LRHE6327XTSA1 by Infineon Technologies. With a maximum non-repetitive peak reverse power dissipation of 260W and a bidirectional polarity, this device offers superior protection against voltage spikes. Ideal for a wide range of applications, this product is reliable, efficient, and easy to install due to its surface mount design. Trust Infineon Technologies for all your transient suppression needs and keep your equipment safe and secure.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes installation and use simple and straightforward.

Surface Mount: YES

Surface mount capability allows for easy and convenient placement on circuit boards.

Maximum Non Repetitive Peak Reverse Power Dissipation: 260 W

High power dissipation capability ensures protection against transient voltage events.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to integrate into existing circuits and designs.

No. of Terminals: 2

Simple two-terminal design simplifies installation and connection.

Package Style (Meter): CHIP CARRIER

Chip carrier package style provides compact and efficient use of space.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliable performance in various conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for use in extreme environmental conditions.

Terminal Finish: GOLD

Gold terminal finish ensures good conductivity and long-term reliability.

Terminal Position: BOTTOM

Bottom terminal position makes it easy to mount and connect in circuits.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type provides efficient transient voltage suppression.

Technology: AVALANCHE

Avalanche technology allows for rapid response to transient voltage events.

Terminal Form: NO LEAD

No lead terminal form simplifies installation and reduces risk of damage.

Maximum Repetitive Peak Reverse Voltage: 3.3 V

High maximum repetitive peak reverse voltage offers robust protection against voltage spikes.

Polarity: BIDIRECTIONAL

Bidirectional polarity ensures protection in both directions of voltage flow.

Diode Element Material: SILICON

Silicon diode element material provides reliable and consistent performance.

Technical Specifications

Transient Suppression Devices ESD300B102LRHE6327XTSA1 attributes and parameters. Explore more Transient Suppression Devices devices from Infineon Technologies

Specs

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-XBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

260 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

CHIP CARRIER

Polarity:

BIDIRECTIONAL

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

GOLD

Terminal Form:

Terminal Position:

Trade Compliance

ESD300B102LRHE6327XTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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