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ESD3V3U1U02LRHE6327XTSA1

Infineon Technologies

ESD3V3U1U02LRHE6327XTSA1 by Infineon Technologies

ESD3V3U1U02LRHE6327XTSA1 by Infineon is a unidirectional Trans Voltage Suppressor Diode with 3.3V peak reverse voltage and 12V clamping voltage. It operates b/w -55°C to 125°C, making it suitable for transient suppression in various electronic applications. This chip carrier package has gold terminal finish and avalanche technology for efficient protection against voltage spikes.

Median Price

$1.000

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 72 parts In-Stock

1+ parts

$1.000

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72

$1.000

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Vyrian

USA . 1,597 parts In-Stock

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1,597

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Digiode

USA . 565 parts In-Stock

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565

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 2,737 parts In-Stock

1+ parts

$0.020

100+ parts

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2,737

$0.020

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Modulus Dynamics

Lithuania . 31,592 parts In-Stock

1+ parts

$0.174

100+ parts

$0.167

1k+ parts

$0.160

10k+ parts

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31,592

$0.174

$0.167

$0.160

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Netroflash

USA . 100 parts In-Stock

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$1.000

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100

$1.000

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Ampacity Inc.

Singapore . 530 parts In-Stock

1+ parts

$1.010

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530

$1.010

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AZTECH Wire

Italy . 237 parts In-Stock

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$9.256

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237

$9.256

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Perfect Parts

USA . 76,727 parts In-Stock

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76,727

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Metaverse IC Inc.

Canada . 60,000 parts In-Stock

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60,000

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Continental Prestige Electronics

USA . 6,709 parts In-Stock

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6,709

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Argo Parts USA

USA . 4,767 parts In-Stock

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4,767

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Corphita

USA . 688 parts In-Stock

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688

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Overview

Enhance the reliability of your electronic devices with the ESD3V3U1U02LRHE6327XTSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon brings you top-notch Transient Suppression Devices that provide superior protection against voltage spikes and surges. Ideal for a range of applications, this product offers unmatched quality and performance, ensuring the longevity of your equipment. Invest in peace of mind and safeguard your electronics with the ESD3V3U1U02LRHE6327XTSA1 today.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes it easy to install and use in various applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient placement on circuit boards.

Package Shape: RECTANGULAR

Rectangular package shape enables space-efficient integration into circuits.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and reduces complexity.

Package Style (Meter): CHIP CARRIER

Chip carrier package style provides protection and durability for the device.

Maximum Operating Temperature: 125 °C

Higher maximum operating temperature ensures reliability in various environmental conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for usage in extreme cold environments.

Terminal Finish: GOLD

Gold terminal finish offers excellent conductivity and long-term reliability.

Terminal Position: BOTTOM

Bottom terminal position helps in easy soldering and mounting on the circuit board.

Minimum Breakdown Voltage: 5 V

Minimum breakdown voltage of 5V provides protection against voltage spikes and surges.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type ensures efficient suppression of transient overvoltages.

Technology: AVALANCHE

Avalanche technology offers fast response time and high energy handling capability.

Terminal Form: NO LEAD

No lead terminal form is environmentally friendly and reduces soldering requirements.

Maximum Repetitive Peak Reverse Voltage: 3.3 V

Maximum repetitive peak reverse voltage of 3.3V protects sensitive components from reverse voltage damage.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures protection in one direction, making it suitable for specific applications.

Maximum Clamping Voltage: 12 V

Maximum clamping voltage of 12V limits excessive voltage spikes and protects connected devices.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and reliability in transient suppression applications.

Technical Specifications

Transient Suppression Devices ESD3V3U1U02LRHE6327XTSA1 attributes and parameters. Explore more Transient Suppression Devices devices from Infineon Technologies

Specs

Minimum Breakdown Voltage:

5 V

Maximum Clamping Voltage:

12 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-XBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

CHIP CARRIER

Polarity:

UNIDIRECTIONAL

Maximum Repetitive Peak Reverse Voltage:

3.3 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

GOLD

Terminal Form:

Terminal Position:

Trade Compliance

ESD3V3U1U02LRHE6327XTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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