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ESD341DPLR

Texas Instruments

ESD341DPLR by Texas Instruments

ESD341DPLR by Texas Instruments is a single bidirectional avalanche diode with 6.2V breakdown voltage and 54W peak reverse power dissipation. Ideal for transient suppression in electronics, it operates b/w -40 to 125 °C and complies with IEC-61000-4-2,4-5 standards.

Median Price

$0.120

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 15,363,091 parts In-Stock

1+ parts

$0.057

100+ parts

$0.039

1k+ parts

$0.020

10k+ parts

-

15,363,091

$0.057

$0.039

$0.020

-

DigiKey

USA . 25,993 parts In-Stock

1+ parts

$0.120

100+ parts

$0.060

1k+ parts

$0.049

10k+ parts

$0.044

25,993

$0.120

$0.060

$0.049

$0.044

Mouser Electronics

USA . 42,902 parts In-Stock

1+ parts

$0.380

100+ parts

$0.129

1k+ parts

$0.075

10k+ parts

$0.050

42,902

$0.380

$0.129

$0.075

$0.050

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,044 parts In-Stock

1+ parts

$0.054

100+ parts

-

1k+ parts

-

10k+ parts

-

4,044

$0.054

-

-

-

Vyrian

USA . 962 parts In-Stock

1+ parts

$0.057

100+ parts

-

1k+ parts

-

10k+ parts

-

962

$0.057

-

-

-

Chip Stock

USA . 17,625 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

17,625

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 5,131,991 parts In-Stock

1+ parts

$0.048

100+ parts

-

1k+ parts

-

10k+ parts

-

5,131,991

$0.048

-

-

-

Semicontronic

India . 5,131,868 parts In-Stock

1+ parts

$0.048

100+ parts

$0.047

1k+ parts

$0.047

10k+ parts

-

5,131,868

$0.048

$0.047

$0.047

-

Corphita

USA . 4,393 parts In-Stock

1+ parts

$0.051

100+ parts

-

1k+ parts

-

10k+ parts

-

4,393

$0.051

-

-

-

Corohmni

South Africa . 125 parts In-Stock

1+ parts

$0.057

100+ parts

-

1k+ parts

-

10k+ parts

-

125

$0.057

-

-

-

Parana Technologies

USA . 1,948 parts In-Stock

1+ parts

$0.134

100+ parts

-

1k+ parts

$1.482

10k+ parts

-

1,948

$0.134

-

$1.482

-

DigiPath Technology Company

USA . 1,489 parts In-Stock

1+ parts

$0.147

100+ parts

$0.135

1k+ parts

-

10k+ parts

-

1,489

$0.147

$0.135

-

-

ChromeModa Solutions

Germany . 6,712 parts In-Stock

1+ parts

$0.150

100+ parts

$0.123

1k+ parts

-

10k+ parts

-

6,712

$0.150

$0.123

-

-

IDEA Electronic Components Group

UK . 1,794 parts In-Stock

1+ parts

$0.150

100+ parts

-

1k+ parts

$0.135

10k+ parts

-

1,794

$0.150

-

$0.135

-

Native Components

USA . 524 parts In-Stock

1+ parts

$33.750

100+ parts

-

1k+ parts

-

10k+ parts

$32.400

524

$33.750

-

-

$32.400

Northwest PG Solutions

USA . 2,004 parts In-Stock

1+ parts

$37.125

100+ parts

-

1k+ parts

-

10k+ parts

-

2,004

$37.125

-

-

-

Overview

Experience superior quality and reliability with the ESD341DPLR by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-notch transient suppression devices that offer unparalleled protection against voltage spikes and surges. Ideal for a wide range of applications, this product ensures peace of mind and secure operation for your electronic devices. Trust in the value, benefits, and advantages that the ESD341DPLR brings to the table, providing unbeatable performance and protection for all your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection for the internal components of the device, making it reliable for long-term use.

Config: SINGLE

The single configuration simplifies installation and reduces complexity, making the device easy to use in various applications.

Surface Mount: YES

The surface mount capability allows for easy integration onto circuit boards, saving space and providing efficient protection against transient voltage spikes.

Maximum Non Repetitive Peak Reverse Power Dissipation: 54 W

With a high maximum power dissipation rating, this device can effectively handle transient power surges, ensuring reliable protection for connected electrical components.

Nominal Breakdown Voltage: 6.2 V

The nominal breakdown voltage of 6.2V ensures that the device triggers at the appropriate voltage level, providing effective protection against overvoltage conditions.

Maximum Reverse Current: 0.1 uA

The low maximum reverse current minimizes power losses and ensures efficient operation of the device during normal conditions.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy handling and placement of the device on circuit boards, facilitating installation and maintenance processes.

Reverse Test Voltage: 3.6 V

The reverse test voltage of 3.6V indicates the level at which the device provides protection against reverse polarity, ensuring proper functionality in voltage-sensitive applications.

No. of Terminals: 2

Having two terminals simplifies the connection process, making it easier to integrate the device into existing circuit designs.

Package Style (Meter): CHIP CARRIER

The chip carrier package style provides compactness and reliability, making the device suitable for applications where space is limited.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature allows the device to withstand elevated temperatures, ensuring reliable performance in harsh environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the device to function effectively in cold environments, providing versatility for a wide range of applications.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold terminal finish enhances the device's conductivity and corrosion resistance, ensuring reliable electrical connections and longevity.

Terminal Position: BOTTOM

The terminal position at the bottom of the device simplifies the installation process and facilitates secure connections, ensuring stable performance in various installations.

Minimum Breakdown Voltage: 5 V

The minimum breakdown voltage of 5V ensures that the device triggers at an appropriate level, providing efficient protection against voltage spikes and surges.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C allows for secure soldering during manufacturing processes, ensuring the device's reliability and durability.

Maximum Breakdown Voltage: 7.2 V

The high maximum breakdown voltage of 7.2V ensures that the device can handle higher voltage levels, providing robust protection against overvoltage conditions.

Reference Standard: IEC-61000-4-2,4-5

Compliance with the IEC standards ensures that the device meets industry requirements for transient suppression, guaranteeing reliable performance and safety.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The diode type of trans voltage suppressor diode indicates the device's ability to suppress transient voltage spikes efficiently, protecting sensitive electronic components from damage.

Technology: AVALANCHE

The avalanche technology used in the device allows for rapid response to transient overvoltage events, ensuring effective protection and minimizing the risk of electrical failures.

Terminal Form: NO LEAD

The no-lead terminal form simplifies the manufacturing process and promotes environmental sustainability, making the device a more eco-friendly choice for electronic applications.

Maximum Repetitive Peak Reverse Voltage: 3.6 V

The maximum repetitive peak reverse voltage of 3.6V indicates the device's ability to withstand repeated overvoltage events, ensuring long-term reliability and continuous protection.

Polarity: BIDIRECTIONAL

The bidirectional polarity allows the device to provide protection against transient voltage spikes in both directions, making it versatile for applications where voltage fluctuations can occur in multiple orientations.

Maximum Clamping Voltage: 10 V

The maximum clamping voltage of 10V limits the peak voltage level during transients, preventing damage to connected devices and ensuring reliable operation under high-voltage conditions.

Diode Element Material: SILICON

The silicon diode element material offers high reliability and efficiency in suppressing transient voltage spikes, making the device suitable for demanding applications where performance is crucial.

Technical Specifications

Transient Suppression Devices ESD341DPLR attributes and parameters. Explore more Transient Suppression Devices devices from Texas Instruments

Specs

Maximum Breakdown Voltage:

7.2 V

Minimum Breakdown Voltage:

5 V

Nominal Breakdown Voltage:

6.2 V

Maximum Clamping Voltage:

10 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

54 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2,4-5

Maximum Repetitive Peak Reverse Voltage:

3.6 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

3.6 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Trade Compliance

ESD341DPLR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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