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ESD5V5S1B02LRHE6327XTSA1

Infineon Technologies

ESD5V5S1B02LRHE6327XTSA1 by Infineon Technologies

Infineon's ESD5V5S1B02LRHE6327XTSA1 is a bidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 6-10V breakdown voltage, ideal for transient suppression. With 150W power dissipation and -55 to 125 °C operating range, it's suitable for protecting sensitive electronics in various applications.

Median Price

$0.085

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 943 parts In-Stock

1+ parts

-

100+ parts

$0.085

1k+ parts

$0.070

10k+ parts

$0.063

943

-

$0.085

$0.070

$0.063

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 935 parts In-Stock

1+ parts

$0.066

100+ parts

-

1k+ parts

-

10k+ parts

-

935

$0.066

-

-

-

Vyrian

USA . 4,649 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,649

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 30,017 parts In-Stock

1+ parts

$0.062

100+ parts

$0.060

1k+ parts

$0.057

10k+ parts

-

30,017

$0.062

$0.060

$0.057

-

Corphita

USA . 803 parts In-Stock

1+ parts

$0.062

100+ parts

-

1k+ parts

-

10k+ parts

-

803

$0.062

-

-

-

Northwest PG Solutions

USA . 1,229 parts In-Stock

1+ parts

$2.580

100+ parts

-

1k+ parts

-

10k+ parts

-

1,229

$2.580

-

-

-

AZTECH Wire

Italy . 144 parts In-Stock

1+ parts

$11.260

100+ parts

-

1k+ parts

-

10k+ parts

-

144

$11.260

-

-

-

Perfect Parts

USA . 1,165 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,165

-

-

-

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Native Components

USA . 120 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.275

10k+ parts

-

120

-

-

$2.275

-

Overview

Enhance your electronic devices with the ESD5V5S1B02LRHE6327XTSA1 by Infineon Technologies. Designed with top-quality materials and advanced technology, this transient suppression device offers reliable protection against voltage spikes and surges. Whether you're in the automotive, industrial, or consumer electronics industry, this product ensures optimal performance and longevity for your equipment. Say goodbye to unexpected downtime and costly repairs - invest in the ESD5V5S1B02LRHE6327XTSA1 today and experience peace of mind knowing your devices are safeguarded.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes it easy to use and install without any complexity.

Surface Mount: YES

Surface mount capability allows for easy and convenient attachment to circuit boards, saving time and effort in assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 150 W

High power dissipation capability ensures protection against sudden voltage spikes or surges, making it reliable in demanding environments.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient use of space on the circuit board, ideal for compact designs.

No. of Terminals: 2

Having only two terminals simplifies the connection process, leading to a more straightforward installation.

Package Style (Meter): CHIP CARRIER

Chip carrier package style provides durability and protection for the components, ensuring a longer lifespan.

Maximum Operating Temperature: 125 °C

High maximum operating temperature tolerance ensures reliable performance even in elevated temperature conditions.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows for usage in a wide range of environments, including extreme cold conditions.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy connection and soldering onto the circuit board.

Minimum Breakdown Voltage: 6 V

With a minimum breakdown voltage of 6 V, it provides effective protection against overvoltage situations below this threshold.

Maximum Breakdown Voltage: 10 V

Having a maximum breakdown voltage of 10 V ensures protection against higher voltage spikes or surges, enhancing overall circuit safety.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type offers efficient voltage clamping and transient suppression capabilities, safeguarding the circuit components.

Technology: AVALANCHE

Avalanche technology enhances the performance and reliability of the device by providing rapid response to voltage transients.

Terminal Form: NO LEAD

No lead terminal form simplifies the installation process and reduces the risk of damage during handling.

Maximum Repetitive Peak Reverse Voltage: 5.5 V

Having a maximum repetitive peak reverse voltage of 5.5 V ensures consistent protection against reversed voltage polarity.

Polarity: BIDIRECTIONAL

Bidirectional polarity allows for protection in both directions, making it versatile and suitable for various circuit configurations.

Diode Element Material: SILICON

Utilizing silicon as the diode element material provides durability and reliability, ensuring long-term performance under various operating conditions.

Technical Specifications

Transient Suppression Devices ESD5V5S1B02LRHE6327XTSA1 attributes and parameters. Explore more Transient Suppression Devices devices from Infineon Technologies

Specs

Maximum Breakdown Voltage:

10 V

Minimum Breakdown Voltage:

6 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-XBCC-N2

Maximum Non Repetitive Peak Reverse Power Dissipation:

150 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

BIDIRECTIONAL

Maximum Repetitive Peak Reverse Voltage:

5.5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

ESD5V5S1B02LRHE6327XTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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