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CM6116

Onsemi

CM6116 by Onsemi

The Onsemi CM6116 is a single TRANS VOLTAGE SUPPRESSOR DIODE with 16V breakdown voltage, ideal for transient suppression. With a max clamping voltage of 20V and avalanche technology, it offers protection in various applications. Operating b/w -30 °C to 85°C, this device meets IEC-61000-4-2 standards and comes in a square grid array package.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 48,000 parts In-Stock

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Flip Electronics

USA . 12,500 parts In-Stock

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12,500

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Vyrian

USA . 12,087 parts In-Stock

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Digiode

USA . 1,949 parts In-Stock

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Native Components

USA . 182 parts In-Stock

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$5.372

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AZTECH Wire

Italy . 780 parts In-Stock

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$8.570

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Perfect Parts

USA . 45,920 parts In-Stock

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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Kulean Microsystems

USA . 7,899 parts In-Stock

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SupplyDigital Components

Austria . 7,814 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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TANS Electronics

Latvia . 4,074 parts In-Stock

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Northwest PG Solutions

USA . 1,810 parts In-Stock

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Problanco Electronics

Mexico . 1,585 parts In-Stock

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Corphita

USA . 776 parts In-Stock

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UHIMA Technologies

Türkiye . 640 parts In-Stock

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Corohmni

South Africa . 379 parts In-Stock

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Overview

Protect your electronics with the CM6116 by Onsemi, a top-of-the-line Transient Suppression Device designed to safeguard against voltage spikes and surges. Manufactured by Onsemi, a trusted name in semiconductor technology, this product guarantees reliability and performance. Ideal for a wide range of applications, this single-config package offers superior protection with its avalanche technology and unidirectional polarity. Ensure the longevity of your devices with the CM6116, providing peace of mind and security for your valuable electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and protection to the internal components of the device.

Config: SINGLE

Single configuration simplifies the installation process and reduces complexity in system design.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on PCBs, saving space and reducing assembly time.

Package Shape: SQUARE

Square package shape facilitates efficient placement on PCBs and ensures a compact design.

No. of Terminals: 4

Having 4 terminals allows for secure and stable connection within the circuit.

Package Style (Meter): GRID ARRAY

Grid array package style enables high component density and uniform spacing for improved performance.

Maximum Operating Temperature: 85 °C

High maximum operating temperature ensures reliable operation in various environmental conditions.

Minimum Operating Temperature: -30 °C

Low minimum operating temperature allows for the device to function effectively in cold environments.

Minimum Breakdown Voltage: 16 V

With a minimum breakdown voltage of 16 V, the device offers reliable protection against voltage spikes and transients.

Reference Standard: IEC-61000-4-2

Compliance with IEC-61000-4-2 standard ensures high-quality performance and reliability in transient suppression.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type provides efficient voltage clamping and transient suppression capabilities.

Maximum Forward Voltage (VF): 1.3 V

Low maximum forward voltage ensures minimal power dissipation and efficient operation of the device.

Technology: AVALANCHE

Avalanche technology offers high surge handling capacity and robust protection against transient events.

Terminal Form: BALL

Ball terminal form provides secure and reliable connections for optimal performance and durability.

Maximum Repetitive Peak Reverse Voltage: 10 V

Maximum repetitive peak reverse voltage of 10 V offers effective protection against reverse voltage transients.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures efficient clamping and suppression of transient voltages in one direction.

Maximum Clamping Voltage: 20 V

Maximum clamping voltage of 20 V provides effective protection against voltage spikes and transients.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency, low leakage current, and reliable performance in transient suppression applications.

Technical Specifications

Transient Suppression Devices CM6116 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Maximum Clamping Voltage:

20 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.3 V

JESD-30 Code:

S-PBGA-B4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

10 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

CM6116 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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