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CM6136

Onsemi

CM6136 by Onsemi

The Onsemi CM6136 is a single avalanche diode with a min breakdown voltage of 15.5V, ideal for transient suppression applications. Its square plastic/epoxy package features a grid array style with 4 terminals in ball form, suitable for surface mount configurations. This unidirectional diode element made of silicon offers efficient protection against voltage spikes.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Chip Stock

USA . 50,000 parts In-Stock

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Vyrian

USA . 1,771 parts In-Stock

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Digiode

USA . 400 parts In-Stock

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400

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Distributors (Availability)

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Native Components

USA . 900 parts In-Stock

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$1.276

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900

$1.276

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Northwest PG Solutions

USA . 1,702 parts In-Stock

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$1.403

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,783 parts In-Stock

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6,783

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TANS Electronics

Latvia . 5,806 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,522 parts In-Stock

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Kulean Microsystems

USA . 3,614 parts In-Stock

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Problanco Electronics

Mexico . 2,331 parts In-Stock

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SupplyDigital Components

Austria . 1,755 parts In-Stock

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Corphita

USA . 1,288 parts In-Stock

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Corohmni

South Africa . 270 parts In-Stock

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UHIMA Technologies

Türkiye . 245 parts In-Stock

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Overview

Discover the high-quality CM6136 by Onsemi, a top-of-the-line transient suppression device designed to protect your electronics from voltage spikes. Onsemi is known for its superior manufacturing standards, ensuring reliability and performance. This versatile product is perfect for a wide range of applications, offering peace of mind and safeguarding your valuable equipment. Trust in the value and benefits of the CM6136 to keep your devices safe and secure.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the device lightweight and durable, which is ideal for portable and long-lasting applications.

Config: SINGLE

The single configuration simplifies the installation and use of the transient suppression device, making it convenient for users.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB integration, saving space and facilitating automated assembly processes.

Package Shape: SQUARE

The square shape of the package provides a compact footprint, making it suitable for applications where space is limited.

No. of Terminals: 4

Having four terminals allows for versatile connection options, providing flexibility in circuit design and implementation.

Package Style (Meter): GRID ARRAY

The grid array package style enhances the device's thermal performance and reliability by facilitating effective heat dissipation.

Terminal Position: BOTTOM

The bottom terminal position simplifies the PCB layout and ensures secure connections, contributing to overall system integrity.

Minimum Breakdown Voltage: 15.5 V

The high minimum breakdown voltage ensures effective transient suppression, safeguarding sensitive components against voltage spikes and surges.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of Trans Voltage Suppressor diodes ensures efficient and reliable transient voltage suppression, protecting electronic circuits from damage.

Technology: AVALANCHE

The avalanche technology offers fast response times and high energy handling capabilities, making the device suitable for demanding transient suppression requirements.

Terminal Form: BALL

The ball terminal form provides reliable electrical connections and facilitates automated assembly processes, ensuring consistent performance.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that voltage spikes are effectively clamped in one direction, providing targeted protection for sensitive components.

Diode Element Material: SILICON

The use of silicon as the diode element material offers superior thermal stability and low leakage currents, ensuring long-term reliability and performance.

Technical Specifications

Transient Suppression Devices CM6136 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Minimum Breakdown Voltage:

15.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

S-PBGA-B4

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

GRID ARRAY

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

CM6136 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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