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CM6114

Onsemi

CM6114 by Onsemi

CM6114 by Onsemi is a Transient Suppression Device with 10V Breakdown Voltage and 13.5V Max Clamping Voltage. It features TRANS VOLTAGE SUPPRESSOR DIODE technology, suitable for protecting electronic circuits from voltage spikes. This surface mount diode, made of silicon, is unidirectional and ideal for applications requiring avalanche protection.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

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1k+

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Digiode

USA . 1,779 parts In-Stock

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Vyrian

USA . 1,583 parts In-Stock

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Problanco Electronics

Mexico . 7,355 parts In-Stock

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TANS Electronics

Latvia . 6,985 parts In-Stock

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SupplyDigital Components

Austria . 6,786 parts In-Stock

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Kulean Microsystems

USA . 6,722 parts In-Stock

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Northwest PG Solutions

USA . 1,388 parts In-Stock

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UHIMA Technologies

Türkiye . 745 parts In-Stock

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Corphita

USA . 371 parts In-Stock

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Corohmni

South Africa . 353 parts In-Stock

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Native Components

USA . 58 parts In-Stock

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Overview

Experience the ultimate surge protection with the CM6114 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers superior quality and reliability in transient suppression devices. Designed for various applications, this surface mount diode offers unmatched protection with a nominal breakdown voltage of 10V and a maximum clamping voltage of 13.5V. Trust Onsemi to safeguard your electronics with cutting-edge technology and unparalleled performance. Choose the CM6114 for peace of mind and uninterrupted operation.

Feature Benefit Bullets

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on PCBs, saving space and simplifying manufacturing processes.

Nominal Breakdown Voltage: 10 V

The low nominal breakdown voltage of 10V makes this device suitable for applications where protection at relatively lower voltage levels is required.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diodes are specifically designed to handle transient voltage spikes effectively, providing robust protection for sensitive electronic components.

Technology: AVALANCHE

Avalanche diodes are known for their ability to handle high surge currents and dissipate large amounts of energy, making them reliable for transient suppression.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that the device only conducts in one direction, offering protection against overvoltage events from a specific direction.

Maximum Clamping Voltage: 13.5 V

The low maximum clamping voltage of 13.5V indicates that the device can effectively limit transient voltage spikes to safe levels, thus protecting downstream components.

Diode Element Material: SILICON

Silicon diodes are commonly used in transient suppression devices due to their high conductivity and efficiency in clamping transient voltages, ensuring reliable protection for electronic circuits.

Technical Specifications

Transient Suppression Devices CM6114 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Nominal Breakdown Voltage:

10 V

Maximum Clamping Voltage:

13.5 V

Diode Element Material:

SILICON

Polarity:

UNIDIRECTIONAL

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Trade Compliance

CM6114 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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