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CM6110

Onsemi

CM6110 by Onsemi

The Onsemi CM6110 is a single TRANS VOLTAGE SUPPRESSOR DIODE with 10V breakdown voltage, ideal for transient suppression. With a max clamping voltage of 13V and operating temperature range from -30 °C to 85°C, it offers reliable protection in various applications. Its SILICON diode element material and AVALANCHE technology make it suitable for surface mount installations in electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Chip Stock

USA . 19,000 parts In-Stock

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Vyrian

USA . 1,320 parts In-Stock

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Digiode

USA . 1,132 parts In-Stock

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Native Components

USA . 971 parts In-Stock

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$6.322

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Component Stockers USA

USA . 362 parts In-Stock

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$99.990

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SupplyDigital Components

Austria . 7,918 parts In-Stock

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Problanco Electronics

Mexico . 7,181 parts In-Stock

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TANS Electronics

Latvia . 4,368 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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Kulean Microsystems

USA . 3,327 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Northwest PG Solutions

USA . 1,340 parts In-Stock

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Corphita

USA . 1,114 parts In-Stock

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Corohmni

South Africa . 412 parts In-Stock

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UHIMA Technologies

Türkiye . 2 parts In-Stock

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Overview

Experience superior protection and reliability with the CM6110 by Onsemi. As a leading manufacturer in transient suppression devices, Onsemi has created a product that offers unparalleled quality and performance. This single-configured device is perfect for a variety of applications, providing customers with peace of mind knowing their electronics are safeguarded against voltage spikes. With its high clamping voltage and avalanche technology, the CM6110 ensures maximum protection while maintaining a compact design. Trust Onsemi to deliver cutting-edge solutions that prioritize your equipment's longevity and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used in the package body provides durability and protection against external factors, ensuring a long lifespan for the product.

Config: SINGLE

Single configuration makes it easy to install and use, simplifying the setup process.

Surface Mount: YES

Surface mount capability allows for easy integration into electronic circuits, making it suitable for a wide range of applications.

Package Shape: SQUARE

The square package shape helps in efficient utilization of space on a circuit board, making it ideal for compact designs.

No. of Terminals: 4

Having 4 terminals provides flexibility in connecting the device to the circuit, allowing for various configurations.

Package Style (Meter): GRID ARRAY

The grid array package style offers a stable and secure mounting option, ensuring reliability in operation.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions, making it suitable for industrial applications.

Minimum Breakdown Voltage: 10 V

The minimum breakdown voltage of 10V ensures effective protection against voltage spikes, safeguarding sensitive electronic components.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The Trans Voltage Suppressor diode type is specifically designed for transient voltage suppression, providing reliable protection for electronic circuits.

Maximum Clamping Voltage: 13 V

The maximum clamping voltage of 13V ensures that the voltage spike is limited to a safe level, preventing damage to connected devices.

Technical Specifications

Transient Suppression Devices CM6110 attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Minimum Breakdown Voltage:

10 V

Maximum Clamping Voltage:

13 V

Config:

SINGLE

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

S-PBGA-B4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-30 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

GRID ARRAY

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

8 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

CM6110 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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