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ESD5382MUT5G

Onsemi

ESD5382MUT5G by Onsemi

ESD5382MUT5G by Onsemi is a unidirectional Trans Voltage Suppressor Diode with 14.2V breakdown voltage, ideal for transient suppression applications. It features avalanche technology, 22V clamping voltage, and operates b/w -55 to 150 °C. Suitable for protecting sensitive electronics from ESD events per IEC-61000-4-2, 4-4 standards.

Median Price

$0.106

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 379,358 parts In-Stock

1+ parts

-

100+ parts

$0.093

1k+ parts

$0.077

10k+ parts

$0.069

379,358

-

$0.093

$0.077

$0.069

DigiKey

USA . 379,358 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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$0.120

379,358

-

-

-

$0.120

Farnell

UK . 379,358 parts In-Stock

1+ parts

-

100+ parts

-

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$0.207

379,358

-

-

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$0.207

Verical

USA . 379,358 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.086

379,358

-

-

-

$0.086

Distributors (In-Stock)

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Digiode

USA . 406 parts In-Stock

1+ parts

$0.076

100+ parts

-

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406

$0.076

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Chip Stock

USA . 55,000 parts In-Stock

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55,000

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Vyrian

USA . 9,848 parts In-Stock

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9,848

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Prism Electronics

USA . 4,000 parts In-Stock

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4,000

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Distributors (Availability)

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Corphita

USA . 2,089 parts In-Stock

1+ parts

$0.072

100+ parts

-

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-

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2,089

$0.072

-

-

-

Corohmni

South Africa . 295 parts In-Stock

1+ parts

$0.080

100+ parts

-

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295

$0.080

-

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Northwest PG Solutions

USA . 213 parts In-Stock

1+ parts

$2.827

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213

$2.827

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AZTECH Wire

Italy . 71 parts In-Stock

1+ parts

$14.480

100+ parts

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71

$14.480

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Continental Prestige Electronics

USA . 379,358 parts In-Stock

1+ parts

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$0.115

379,358

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$0.115

TANS Electronics

Latvia . 5,795 parts In-Stock

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5,795

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Problanco Electronics

Mexico . 3,654 parts In-Stock

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Kulean Microsystems

USA . 1,851 parts In-Stock

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SupplyDigital Components

Austria . 1,767 parts In-Stock

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1,767

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Futuretech Components

Singapore . 300 parts In-Stock

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300

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Kepictronics

USA . 300 parts In-Stock

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300

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Native Components

USA . 275 parts In-Stock

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$2.493

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275

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$2.493

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UHIMA Technologies

Türkiye . 23 parts In-Stock

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Overview

Enhance the protection of your electronic devices with the ESD5382MUT5G by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability. This Transient Suppression Device offers unparalleled performance in safeguarding against voltage spikes and surges, making it an essential component for various applications. With its superior design and advanced technology, customers can rest assured that their electronics are well-protected. Upgrade to the ESD5382MUT5G today and experience peace of mind knowing your devices are safe from potential damage.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the device.

Nominal Breakdown Voltage: 14.2 V

Offers effective protection against transient voltage spikes up to 14.2 volts, safeguarding connected devices.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for use in various environments.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

Ensures good electrical conductivity and corrosion resistance for reliable performance.

Maximum Power Dissipation: 0.3 W

Efficiently dissipates excess power during transient events, preventing damage to the device.

Minimum Breakdown Voltage: 14.2 V

Consistent breakdown voltage ensures reliable protection against overvoltage conditions.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient suppression, offering high-performance protection.

Technology: AVALANCHE

Utilizes avalanche breakdown for rapid response to transient events, enhancing protection capabilities.

Maximum Clamping Voltage: 22 V

Limits the peak voltage during transient events to 22 volts, reducing the risk of damage to connected devices.

Diode Element Material: SILICON

Silicon diode ensures high reliability and efficiency in transient suppression applications.

Technical Specifications

Transient Suppression Devices ESD5382MUT5G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

Minimum Breakdown Voltage:

14.2 V

Nominal Breakdown Voltage:

14.2 V

Maximum Clamping Voltage:

22 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.3 W

Reference Standard:

IEC-61000-4-2, 4-4

Maximum Repetitive Peak Reverse Voltage:

3 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

ESD5382MUT5G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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