Loading...

USBULC6-2F7

STMicroelectronics

USBULC6-2F7 by STMicroelectronics

USBULC6-2F7 by STMicroelectronics is a single transient suppression device with a max power dissipation of 50W. It has a breakdown voltage of 7.25V and operates in temperatures ranging from -40 to 150 °C. This diode type trans voltage suppressor diode is ideal for protecting electronic circuits from voltage spikes in various applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,921 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,921

-

-

-

-

Digiode

USA . 4,341 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,341

-

-

-

-

Anansix

USA . 896 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

896

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,118 parts In-Stock

1+ parts

$0.047

100+ parts

-

1k+ parts

$0.042

10k+ parts

-

1,118

$0.047

-

$0.042

-

MKK Technologies

India . 630 parts In-Stock

1+ parts

$0.088

100+ parts

-

1k+ parts

-

10k+ parts

-

630

$0.088

-

-

-

DigiPath Technology Company

USA . 630 parts In-Stock

1+ parts

$0.088

100+ parts

-

1k+ parts

-

10k+ parts

-

630

$0.088

-

-

-

Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$0.151

100+ parts

$0.150

1k+ parts

$0.144

10k+ parts

-

500

$0.151

$0.150

$0.144

-

AZTECH Wire

Italy . 737 parts In-Stock

1+ parts

$11.730

100+ parts

-

1k+ parts

-

10k+ parts

-

737

$11.730

-

-

-

Authorized Procurement Solutions

USA . 2,700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,700

-

-

-

-

Parana Technologies

USA . 2,260 parts In-Stock

1+ parts

-

100+ parts

$0.056

1k+ parts

-

10k+ parts

-

2,260

-

$0.056

-

-

Corphita

USA . 897 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

897

-

-

-

-

Overview

Looking for reliable transient suppression devices that offer top-notch quality and unparalleled performance? Look no further than the USBULC6-2F7 by STMicroelectronics. With a reputation for excellence in manufacturing, STMicroelectronics delivers cutting-edge solutions for various applications. The USBULC6-2F7 provides customers with unmatched value, benefits, and advantages, ensuring protection and peace of mind. Upgrade your system with this innovative product and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and reliable housing for the device, ensuring long-term performance.

Config: SINGLE

Simplifies installation and reduces complexity in system design.

Surface Mount: YES

Allows for easy integration onto circuit boards, saving space and improving efficiency.

Maximum Non Repetitive Peak Reverse Power Dissipation: 50 W

Capable of handling high power surges, providing robust protection for sensitive electronics.

Nominal Breakdown Voltage: 7.25 V

Provides effective protection against voltage spikes and transients.

Maximum Reverse Current: 0.07 uA

Ensures low leakage current for efficient operation.

Package Shape: SQUARE

Facilitates easy placement and mounting in various applications.

Reverse Test Voltage: 3 V

Allows for testing and verification of the device's performance under specified conditions.

No. of Terminals: 4

Provides multiple connection points for secure and stable installation.

Package Style (Meter): GRID ARRAY

Enhances thermal performance and mechanical strength of the device.

Maximum Operating Temperature: 150 °C

Suitable for operation in a wide range of temperature environments.

Minimum Operating Temperature: -40 °C

Ensures reliable performance even in extreme cold conditions.

Terminal Position: BOTTOM

Facilitates easy connection and ensures proper orientation during installation.

Minimum Breakdown Voltage: 5.5 V

Provides protection at lower threshold voltages, enhancing overall system reliability.

Maximum Breakdown Voltage: 9 V

Offers protection against higher voltage transients, safeguarding sensitive components.

Reference Standard: IEC61000-4-2

Compliance with industry standards ensures reliable performance and compatibility.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed for transient voltage suppression, offering superior protection.

Technology: AVALANCHE

Utilizes avalanche breakdown for efficient suppression of voltage transients.

Terminal Form: BALL

Ensures secure and reliable connections in various applications.

Polarity: UNIDIRECTIONAL

Provides protection in one direction, ensuring targeted suppression of transients.

Diode Element Material: SILICON

Utilizes high-quality silicon material for efficient transient suppression.

Technical Specifications

Transient Suppression Devices USBULC6-2F7 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Breakdown Voltage:

9 V

Minimum Breakdown Voltage:

5.5 V

Nominal Breakdown Voltage:

7.25 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

S-PBGA-B4

Maximum Non Repetitive Peak Reverse Power Dissipation:

50 W

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC61000-4-2

Maximum Reverse Current:

.07 uA

Reverse Test Voltage:

3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

USBULC6-2F7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 7