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USBULC6-2P6

STMicroelectronics

USBULC6-2P6 by STMicroelectronics

USBULC6-2P6 by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for surface mount applications. It features a max operating temp of 125 °C, a min breakdown voltage of 6V, and complies with IEC-61000-4-2 standards. Ideal for protecting sensitive electronics from voltage spikes.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,646 parts In-Stock

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4,646

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Digiode

USA . 4,014 parts In-Stock

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4,014

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Anansix

USA . 1,638 parts In-Stock

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1,638

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 483 parts In-Stock

1+ parts

$0.166

100+ parts

-

1k+ parts

$0.149

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483

$0.166

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$0.149

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MKK Technologies

India . 479 parts In-Stock

1+ parts

$0.311

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-

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479

$0.311

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DigiPath Technology Company

USA . 479 parts In-Stock

1+ parts

$0.311

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479

$0.311

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AZTECH Wire

Italy . 939 parts In-Stock

1+ parts

$19.650

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939

$19.650

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Component Stockers USA

USA . 685 parts In-Stock

1+ parts

$99.990

100+ parts

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685

$99.990

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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25,000

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Metaverse IC Inc.

Canada . 24,000 parts In-Stock

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24,000

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Kepictronics

USA . 21,000 parts In-Stock

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21,000

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A-Z Elektronik GmbH

Germany . 7,263 parts In-Stock

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7,263

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Corphita

USA . 1,198 parts In-Stock

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1,198

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Parana Technologies

USA . 596 parts In-Stock

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$0.198

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596

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$0.198

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Overview

Shield your devices with the USBULC6-2P6 from STMicroelectronics, a leader in high-quality transient suppression solutions. Designed for superior performance, this compact device expertly protects sensitive electronics from voltage spikes and surges, ensuring reliability in demanding environments. Benefit from its robust construction and industry-leading standards, making it the ideal choice for automotive, industrial, and consumer applications. Experience peace of mind knowing your investments are safeguarded!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making the device suitable for various applications.

Config: SINGLE

A single configuration simplifies the design and integration process in circuits, enhancing reliability.

Surface Mount: YES

Surface mount technology allows for compact designs and efficient automated assembly, saving space and reducing manufacturing costs.

Package Shape: RECTANGULAR

The rectangular shape is ideal for compact layouts and facilitates effective integration into diverse PCB designs.

No. of Terminals: 6

With six terminals, this device provides flexible connection options for optimal integration in various circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package maximizes space efficiency in circuit designs, allowing for higher component density.

Maximum Operating Temperature: 125 °C

A high operating temperature tolerance ensures reliable performance in demanding environments, adding to the device's versatility.

Terminal Position: DUAL

Dual terminal positioning provides ease of mounting and improves the stability of connections within the circuit.

Minimum Breakdown Voltage: 6 V

A minimum breakdown voltage of 6V ensures adequate protection for sensitive components against voltage spikes.

Reference Standard: IEC-61000-4-2

Compliance with IEC-61000-4-2 ensures that the device meets stringent standards for electromagnetic compatibility, enhancing reliability.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a Transient Voltage Suppressor diode, the product efficiently protects against voltage transients, safeguarding electronics.

Technology: AVALANCHE

Avalanche technology enables rapid response to overvoltage conditions, enhancing circuit protection and performance.

Terminal Form: FLAT

Flat terminals facilitate effective soldering and contact with PCB traces, ensuring a strong and reliable connection.

Maximum Repetitive Peak Reverse Voltage: 5 V

A low peak reverse voltage rating makes this device suitable for low-voltage circuits, providing optimal protection without impacting performance.

Polarity: UNIDIRECTIONAL

Unidirectional design simplifies connections and helps control the flow of current, providing effective suppression of reverse voltage spikes.

Diode Element Material: SILICON

Silicon diode elements ensure efficient performance and reliable operation under varying environmental conditions.

Technical Specifications

Transient Suppression Devices USBULC6-2P6 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY, ULTRA LOW CAPACITANCE

Minimum Breakdown Voltage:

6 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-F6

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

USBULC6-2P6 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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