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USBULC6-2N4

STMicroelectronics

USBULC6-2N4 by STMicroelectronics

USBULC6-2N4 by STMicroelectronics is a single transient suppression device with 50W peak power dissipation. It operates b/w -40 to 150 °C, has a breakdown voltage of 6V, and complies with IEC-61000-4-2 standard. Ideal for protecting electronic circuits from voltage spikes in various applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,937 parts In-Stock

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6,937

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Digiode

USA . 4,982 parts In-Stock

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4,982

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Anansix

USA . 2,603 parts In-Stock

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2,603

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,170 parts In-Stock

1+ parts

$0.016

100+ parts

-

1k+ parts

$0.014

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2,170

$0.016

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$0.014

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MKK Technologies

India . 1,873 parts In-Stock

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$0.029

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1,873

$0.029

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DigiPath Technology Company

USA . 1,873 parts In-Stock

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$0.029

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1,873

$0.029

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AZTECH Wire

Italy . 582 parts In-Stock

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$22.070

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582

$22.070

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Component Stockers USA

USA . 529 parts In-Stock

1+ parts

$99.990

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529

$99.990

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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3,000

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Corphita

USA . 2,836 parts In-Stock

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2,836

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Parana Technologies

USA . 518 parts In-Stock

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$0.019

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518

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$0.019

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Overview

Protect your devices with the USBULC6-2N4 from STMicroelectronics, a leading manufacturer known for quality and reliability. As a transient suppression device, this product offers valuable protection against voltage spikes and surges, ensuring the longevity of your electronics. Ideal for a wide range of applications, this compact and efficient device is designed to safeguard your equipment from potential damage. Trust STMicroelectronics to provide you with the peace of mind you need in today's fast-paced world of technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the device, making it long-lasting and reliable.

Config: SINGLE

The single configuration simplifies installation and maintenance, making it convenient for users.

Surface Mount: YES

The surface mount capability allows for easy integration into circuit boards, saving space and reducing assembly time.

Maximum Non Repetitive Peak Reverse Power Dissipation: 50 W

With a high power dissipation capability, this device can effectively handle transient surges and protect connected equipment.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy placement and secure mounting of the device in electronic devices or systems.

No. of Terminals: 4

Having 4 terminals provides multiple connection options, enhancing flexibility in system design and layout.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves valuable space in compact electronic devices, allowing for efficient use of limited board space.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures reliable performance under varying environmental conditions, increasing the device's versatility.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature allows the device to function effectively even in cold environments, making it suitable for a wide range of applications.

Terminal Position: DUAL

The dual terminal position offers increased stability and improved electrical connections, enhancing the device's overall performance.

Minimum Breakdown Voltage: 6 V

The minimum breakdown voltage of 6V ensures efficient protection against voltage spikes, safeguarding connected equipment from damage.

Reference Standard: IEC-61000-4-2

Compliance with the IEC-61000-4-2 standard ensures that the device meets industry requirements for transient suppression, guaranteeing its reliability and effectiveness.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The trans voltage suppressor diode type provides superior voltage clamping performance, effectively suppressing transient surges and protecting sensitive components.

Technology: AVALANCHE

The avalanche technology allows for quick and effective response to transient surges, ensuring rapid protection for connected equipment.

Terminal Form: NO LEAD

The no-lead terminal form offers enhanced reliability and durability, reducing the risk of connection failures and ensuring long-term performance.

Maximum Repetitive Peak Reverse Voltage: 3 V

With a maximum repetitive peak reverse voltage of 3V, the device provides reliable protection against voltage spikes, minimizing the risk of damage to connected devices.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures that transient surges are effectively clamped in one direction, providing focused protection for sensitive components.

Diode Element Material: SILICON

The silicon diode element material offers high efficiency and reliability in transient suppression, ensuring optimal performance and long-term protection.

Technical Specifications

Transient Suppression Devices USBULC6-2N4 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Minimum Breakdown Voltage:

6 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-N4

Maximum Non Repetitive Peak Reverse Power Dissipation:

50 W

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

USBULC6-2N4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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