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USBULC6-2F3

STMicroelectronics

USBULC6-2F3 by STMicroelectronics

USBULC6-2F3 by STMicroelectronics is a unidirectional transient voltage suppressor diode designed for robust protection in electronic circuits. It features a breakdown voltage of 7.5 V, max power dissipation of 60 W, and operates up to 125 °C. Ideal for safeguarding sensitive components from voltage spikes.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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ComSIT Distribution GmbH

Germany . 15,000 parts In-Stock

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Vyrian

USA . 4,437 parts In-Stock

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Digiode

USA . 4,037 parts In-Stock

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Semi Source

USA . 2,196 parts In-Stock

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Anansix

USA . 1,181 parts In-Stock

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Connector Distribution Corp

USA . 639 parts In-Stock

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Right Parts Inc.

USA . 639 parts In-Stock

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SPM Sales

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Prism Electronics

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290

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 764 parts In-Stock

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$0.099

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$0.089

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764

$0.099

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$0.089

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MKK Technologies

India . 1,026 parts In-Stock

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$0.187

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$0.187

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DigiPath Technology Company

USA . 1,026 parts In-Stock

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$0.187

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AZTECH Wire

Italy . 103 parts In-Stock

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$10.090

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Kepictronics

USA . 360,000 parts In-Stock

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Perfect Parts

USA . 32,108 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,500 parts In-Stock

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Assy Fe

Spain . 7,100 parts In-Stock

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Corphita

USA . 4,893 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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ChipstoGo Electronic ltd

UK . 1,600 parts In-Stock

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Parana Technologies

USA . 1,515 parts In-Stock

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$0.119

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Overview

Elevate your electronic designs with the USBULC6-2F3 from STMicroelectronics, a leader in innovative technology. This high-performance transient suppression device ensures optimal protection against voltage spikes, safeguarding your circuits while enhancing reliability. Its compact, surface-mount design seamlessly integrates into various applications, making it ideal for automotive, telecom, and consumer electronics. Choose STMicroelectronics for unparalleled quality and peace of mind in every project!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable and lightweight material ensures reliable performance in various environments.

Config: SINGLE

A single configuration allows for straightforward integration into circuit designs.

Surface Mount: YES

Surface mount capability enables efficient use of board space and simplifies assembly processes.

Maximum Non Repetitive Peak Reverse Power Dissipation: 60 W

A high power dissipation rating ensures the device can handle significant transients without failure.

Nominal Breakdown Voltage: 7.5 V

The specified breakdown voltage optimally protects sensitive components from voltage spikes.

Package Shape: RECTANGULAR

The rectangular shape contributes to efficient placement on PCB layouts for better thermal management.

No. of Terminals: 4

Four terminals enable versatile connections, providing flexibility in circuit design.

Package Style (Meter): GRID ARRAY

The grid array package style allows for dense packing on boards, enhancing performance in compact designs.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, this device is suitable for high-performance applications.

Terminal Finish: MATTE TIN

The matte tin finish improves solderability and protects against corrosion, ensuring long-lasting connections.

Terminal Position: BOTTOM

Bottom terminal positioning simplifies mounting and promotes better thermal conduction.

Minimum Breakdown Voltage: 6 V

The minimum breakdown voltage of 6 V provides a reliable threshold for effective transient suppression.

Maximum Breakdown Voltage: 9 V

Support for a maximum breakdown voltage of 9 V safeguards circuits from higher-than-expected voltage levels.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

As a transient voltage suppressor diode, it is specifically designed to protect against spikes and surges.

Technology: AVALANCHE

Employing avalanche technology enhances the diode's effectiveness in dissipating transient energy quickly.

Terminal Form: BALL

Ball terminals offer excellent electrical connection and mechanical support, ensuring reliability in use.

Polarity: UNIDIRECTIONAL

Unidirectional polarity simplifies the circuit design while providing effective surge protection in one direction.

Diode Element Material: SILICON

Silicon construction provides robustness and stability, making it suitable for a range of applications.

Technical Specifications

Transient Suppression Devices USBULC6-2F3 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Breakdown Voltage:

9 V

Minimum Breakdown Voltage:

6 V

Nominal Breakdown Voltage:

7.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PBGA-B4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

60 W

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

GRID ARRAY

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

USBULC6-2F3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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