Loading...

ESDALC6V1F2

STMicroelectronics

ESDALC6V1F2 by STMicroelectronics

ESDALC6V1F2 by STMicroelectronics is a unidirectional transient voltage suppressor diode ideal for protecting sensitive electronics. It features a breakdown voltage of 6.65 V, max power dissipation of 25 W, and operates up to 125 °C. Its compact design suits surface mount applications effectively.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 9,024 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,024

-

-

-

-

Digiode

USA . 4,291 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,291

-

-

-

-

Sensible Micro Corp

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

-

Anansix

USA . 2,018 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,018

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,310 parts In-Stock

1+ parts

$0.111

100+ parts

-

1k+ parts

$0.100

10k+ parts

-

1,310

$0.111

-

$0.100

-

MKK Technologies

India . 55 parts In-Stock

1+ parts

$0.209

100+ parts

-

1k+ parts

-

10k+ parts

-

55

$0.209

-

-

-

DigiPath Technology Company

USA . 55 parts In-Stock

1+ parts

$0.209

100+ parts

-

1k+ parts

-

10k+ parts

-

55

$0.209

-

-

-

Native Components

USA . 5 parts In-Stock

1+ parts

$0.289

100+ parts

-

1k+ parts

-

10k+ parts

$0.278

5

$0.289

-

-

$0.278

Northwest PG Solutions

USA . 438 parts In-Stock

1+ parts

$0.318

100+ parts

-

1k+ parts

-

10k+ parts

$0.281

438

$0.318

-

-

$0.281

AZTECH Wire

Italy . 580 parts In-Stock

1+ parts

$21.390

100+ parts

-

1k+ parts

-

10k+ parts

-

580

$21.390

-

-

-

Parana Technologies

USA . 2,096 parts In-Stock

1+ parts

-

100+ parts

$0.133

1k+ parts

-

10k+ parts

-

2,096

-

$0.133

-

-

Corphita

USA . 1,331 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,331

-

-

-

-

Metaverse IC Inc.

Canada . 460 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

460

-

-

-

-

Kepictronics

USA . 360 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

360

-

-

-

-

Overview

Elevate your designs with the ESDALC6V1F2 from STMicroelectronics, a top-tier transient suppression device known for its exceptional reliability and performance. Crafted with precision, this unidirectional silicon diode ensures robust protection against voltage spikes, making it ideal for sensitive electronics in automotive, industrial, and consumer applications. Trust in STMicroelectronics' industry expertise to enhance your product's lifespan and safeguard your innovations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy in the package body ensures durability and protection against environmental factors, making this device suitable for various applications.

Config: COMMON ANODE, 4 ELEMENTS

With a common anode configuration and four elements, this device offers versatility in circuit design, accommodating various suppression needs effectively.

Surface Mount: YES

Surface mounting technology allows for reduced PCB space and easier integration into modern electronic designs, enhancing assembly efficiency.

Maximum Non Repetitive Peak Reverse Power Dissipation: 25 W

A rated power dissipation of 25 W means this device can handle significant transients, providing robust protection for sensitive electronics.

Nominal Breakdown Voltage: 6.65 V

With a nominal breakdown voltage of 6.65 V, this device effectively clamps voltage spikes, safeguarding components from overvoltage damage.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space on PCBs, facilitating easier layout and integration in complex circuits.

No. of Terminals: 5

Having five terminals increases connectivity options, allowing for flexible circuit designs and easier implementation in various configurations.

Package Style (Meter): GRID ARRAY

The grid array style provides a stable mounting platform and simplifies assembly processes, making it easier to manage during production.

Maximum Operating Temperature: 125 °C

A high maximum operating temperature of 125 °C allows this device to function reliably in harsh environments, increasing its suitability for demanding applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish enhances solderability and reduces oxidation, ensuring reliable electrical connections and longer device life.

Terminal Position: BOTTOM

Bottom terminal positioning enhances stability on the PCB, allowing for improved mechanical performance and ease of mounting.

Minimum Breakdown Voltage: 6.1 V

A minimum breakdown voltage of 6.1 V provides added flexibility in clamping capabilities, ensuring effective protection across a range of voltage conditions.

Maximum Breakdown Voltage: 7.2 V

The maximum breakdown voltage of 7.2 V provides a safety margin for transient events, making this device dependable for protecting sensitive components.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Being a Transient Voltage Suppressor diode, it is specifically designed to protect circuits from voltage spikes, ensuring the longevity of connected components.

Technology: AVALANCHE

Utilizing avalanche technology, this diode efficiently clamps overshoots, maintaining circuit stability and protecting against unexpected transients.

Terminal Form: BALL

The ball terminal form improves connection reliability and allows for compact placement in tightly packed circuits.

No. of Elements: 4

With four elements, this device provides multiple pathways for transient suppression, optimizing performance during voltage spikes.

Polarity: UNIDIRECTIONAL

Being unidirectional, this device is ideal for protecting circuits that aren't oriented for reverse voltage protection, enhancing design simplicity.

Diode Element Material: SILICON

Silicon as the diode element material ensures excellent electronic properties, contributing to reliable operation over a wide range of temperatures.

Technical Specifications

Transient Suppression Devices ESDALC6V1F2 attributes and parameters. Explore more Transient Suppression Devices devices from STMicroelectronics

Specs

Maximum Breakdown Voltage:

7.2 V

Minimum Breakdown Voltage:

6.1 V

Nominal Breakdown Voltage:

6.65 V

Config:

COMMON ANODE, 4 ELEMENTS

Diode Element Material:

SILICON

JESD-30 Code:

R-PBGA-B5

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

25 W

No. of Elements:

4

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

GRID ARRAY

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

ESDALC6V1F2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20