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TPD2E007YFMTG4

Texas Instruments

TPD2E007YFMTG4 by Texas Instruments

TPD2E007YFMTG4 by Texas Instruments is a bidirectional avalanche diode with a 14V clamping voltage and 0.05uA reverse current. It is used for transient suppression in applications requiring protection against voltage spikes, with an operating temperature range of -40 to 85°C. The device comes in a square package shape and features bottom terminal position with tin silver copper finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,684 parts In-Stock

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Digiode

USA . 3,423 parts In-Stock

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Nova Conductors

Japan . 900 parts In-Stock

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900

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ComSIT Distribution GmbH

Germany . 250 parts In-Stock

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250

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One Stop Electronics

USA . 1,132 parts In-Stock

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$0.010

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1,132

$0.010

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Parana Technologies

USA . 1 parts In-Stock

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$0.078

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$1.446

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1

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DigiPath Technology Company

USA . 1,718 parts In-Stock

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$0.086

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$0.079

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1,718

$0.086

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ChromeModa Solutions

Germany . 6,550 parts In-Stock

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$0.088

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$0.072

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$0.088

$0.072

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IDEA Electronic Components Group

UK . 2,014 parts In-Stock

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$0.088

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$0.079

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$0.088

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Ampacity Inc.

Singapore . 1,234 parts In-Stock

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$3.010

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AZTECH Wire

Italy . 556 parts In-Stock

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$9.754

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Corphita

USA . 1,605 parts In-Stock

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Bastille Electronics

Australia . 43 parts In-Stock

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Overview

Enhance the reliability of your electronic devices with the TPD2E007YFMTG4 by Texas Instruments. As a leader in the industry, Texas Instruments delivers top-quality transient suppression devices like this one that offer superior protection against voltage spikes and surges. Ideal for a wide range of applications, from consumer electronics to industrial equipment, this square-shaped device provides peace of mind by ensuring your valuable equipment stays safe and operational. Invest in the TPD2E007YFMTG4 and safeguard your electronics with the best in the business.

Feature Benefit Bullets

Surface Mount: YES

Surface mount feature makes it easy to install and saves space on the PCB.

Nominal Breakdown Voltage: 14 V

With a nominal breakdown voltage of 14 V, this device provides effective protection against voltage spikes.

Maximum Reverse Current: 0.05 uA

Low maximum reverse current ensures minimal leakage when the device is not conducting, improving overall efficiency.

Package Shape: SQUARE

Square package shape allows for easy placement and alignment on the PCB.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this device can withstand high temperatures, making it suitable for a wide range of applications.

Minimum Operating Temperature: -40 °C

Operating at temperatures as low as -40°C ensures reliability in harsh environmental conditions.

Terminal Finish: TIN SILVER COPPER

Terminal finish of tin, silver, and copper provides excellent conductivity and corrosion resistance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type ensures efficient suppression of voltage spikes and surges.

Technology: AVALANCHE

Avalanche technology offers fast response time and high energy handling capabilities for superior transient suppression.

Maximum Repetitive Peak Reverse Voltage: 13 V

With a maximum repetitive peak reverse voltage of 13 V, this device can effectively protect against repeated voltage spikes.

Polarity: BIDIRECTIONAL

Bidirectional polarity allows the device to protect against voltage surges in both directions, increasing versatility.

Maximum Clamping Voltage: 14 V

Maximum clamping voltage of 14 V ensures that the protected circuit is not exposed to excessive voltage levels.

Diode Element Material: SILICON

Silicon diode element material offers high reliability and performance for long-term use.

Technical Specifications

Transient Suppression Devices TPD2E007YFMTG4 attributes and parameters. Explore more Transient Suppression Devices devices from Texas Instruments

Specs

Nominal Breakdown Voltage:

14 V

Maximum Clamping Voltage:

14 V

Diode Element Material:

SILICON

JESD-30 Code:

S-XBGA-N4

JESD-609 Code:

e1

Moisture Sensitivity Level (MSL):

1

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Repetitive Peak Reverse Voltage:

13 V

Maximum Reverse Current:

.05 uA

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

TPD2E007YFMTG4 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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