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TPD2E001DZDR

Texas Instruments

TPD2E001DZDR by Texas Instruments

TPD2E001DZDR by Texas Instruments is a single transient suppression device with a max clamping voltage of 25V. It features a unidirectional diode element made of silicon, suitable for applications requiring protection against voltage transients. With a small outline package style and dual terminal position, it operates b/w -40°C to 85°C according to IEC-61000-4-2 standards.

Median Price

$0.278

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

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Texas Instruments

USA . 1,337,358 parts In-Stock

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$0.189

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$0.097

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Chip1Stop

Japan . 10,679 parts In-Stock

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Mouser Electronics

USA . 4,374 parts In-Stock

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$0.329

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$0.251

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RS (Exports)

UK . 6,575 parts In-Stock

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$0.368

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Verical

USA . 1,544 parts In-Stock

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Nova Conductors

Japan . 10 parts In-Stock

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Digiode

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Maritex

Poland . 47 parts In-Stock

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Component Electronics Inc.

Canada . 2,982 parts In-Stock

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Vyrian

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Chip Stock

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Component Sense

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Kruse Electronics AG

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Cyclops Electronics Ltd

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Zilex Electronics Inc.

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LWI Electronics Inc

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Mentor Electronics Marketing, LLC

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Sensible Micro Corp

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EMSNET

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Holdelec - ElecDif-Pro

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Prism Electronics

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ComSIT Distribution GmbH

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LittleDiode

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Corohmni

South Africa . 112 parts In-Stock

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Advanced Electronics

New Zealand . 40 parts In-Stock

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Parana Technologies

USA . 1,808 parts In-Stock

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DigiPath Technology Company

USA . 2,247 parts In-Stock

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$0.101

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ChromeModa Solutions

Germany . 5,864 parts In-Stock

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IDEA Electronic Components Group

UK . 1,186 parts In-Stock

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Ampacity Inc.

Singapore . 235,035 parts In-Stock

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Decca Corp

Germany . 231,995 parts In-Stock

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Argo Parts USA

USA . 267 parts In-Stock

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$0.228

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Netroflash

USA . 2,000 parts In-Stock

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Corphita

USA . 2,323 parts In-Stock

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Continental Prestige Electronics

USA . 3 parts In-Stock

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Perfect Parts

USA . 433,932 parts In-Stock

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Epart123

USA . 63,000 parts In-Stock

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iodParts Technologies Inc.

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Lixinc

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Futuretech Components

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A-Z Elektronik GmbH

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Assy Fe

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Robosynatics

Brazil . 950 parts In-Stock

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Lucentia Tech

USA . 950 parts In-Stock

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Formix International (Excess)

India . 500 parts In-Stock

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Overview

Enhance the reliability of your electronic systems with the TPD2E001DZDR by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality transient suppression devices that provide unparalleled protection against voltage spikes and surges. Ideal for a wide range of applications, this diode offers peace of mind by safeguarding your valuable equipment from potential damage. Trust in Texas Instruments to provide you with the best-in-class solutions for all your transient suppression needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties and protection against environmental factors, making the device durable and reliable.

Config: SINGLE

Single configuration simplifies installation and reduces complexity in circuit design.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly.

Maximum Reverse Current: 0.001 uA

Low reverse current ensures minimal power loss and efficient operation of the device.

Package Shape: RECTANGULAR

Rectangular shape helps in space-saving integration on the PCB.

No. of Terminals: 4

Having 4 terminals provides flexibility in connection and secure mounting on the PCB.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves PCB space and allows for dense mounting of components.

Maximum Operating Temperature: 85 °C

High operating temperature range ensures performance in a variety of environmental conditions.

Minimum Operating Temperature: -40 °C

Wide temperature range allows for operation in extreme cold conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

This finish provides corrosion resistance and ensures stable connections for long-term reliability.

Terminal Position: DUAL

Dual terminal position allows for versatile mounting options and efficient connection to the circuit.

Minimum Breakdown Voltage: 11 V

High breakdown voltage provides effective protection against voltage spikes and surges.

Maximum Repetitive Peak Reverse Voltage: 5.5 V

This voltage rating ensures reliable protection against reverse voltage during operation.

Polarity: UNIDIRECTIONAL

Unidirectional polarity ensures that the device operates efficiently in a specific direction, protecting the circuit from voltage transients.

Maximum Clamping Voltage: 25 V

The maximum clamping voltage limits the voltage spike to a safe level, protecting downstream components from damage.

Diode Element Material: SILICON

The use of silicon diode element material ensures high efficiency and reliability in suppressing voltage transients.

Technical Specifications

Transient Suppression Devices TPD2E001DZDR attributes and parameters. Explore more Transient Suppression Devices devices from Texas Instruments

Specs

Minimum Breakdown Voltage:

11 V

Maximum Clamping Voltage:

25 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Reference Standard:

IEC-61000-4-2

Maximum Repetitive Peak Reverse Voltage:

5.5 V

Maximum Reverse Current:

.001 uA

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

TPD2E001DZDR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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