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ESD205B102ELSE6327XTSA1

Infineon Technologies

ESD205B102ELSE6327XTSA1 by Infineon Technologies

Infineon's ESD205B102ELSE6327XTSA1 is a single TRANS VOLTAGE SUPPRESSOR DIODE with 8V breakdown voltage and 30W peak power dissipation. Ideal for transient suppression in applications requiring bidirectional protection, such as consumer electronics and industrial equipment.

Median Price

$0.114

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,882,759 parts In-Stock

1+ parts

-

100+ parts

$0.118

1k+ parts

$0.098

10k+ parts

$0.088

1,882,759

-

$0.118

$0.098

$0.088

Verical

USA . 1,759,745 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.110

1,759,745

-

-

-

$0.110

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.088

100+ parts

-

1k+ parts

-

10k+ parts

-

50

$0.088

-

-

-

Digiode

USA . 773 parts In-Stock

1+ parts

$0.092

100+ parts

-

1k+ parts

-

10k+ parts

-

773

$0.092

-

-

-

Vyrian

USA . 6,246 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,246

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Aztec Data Supply Inc.

USA . 1,305 parts In-Stock

1+ parts

$0.025

100+ parts

-

1k+ parts

-

10k+ parts

-

1,305

$0.025

-

-

-

Corohmni

South Africa . 930 parts In-Stock

1+ parts

$0.056

100+ parts

-

1k+ parts

-

10k+ parts

-

930

$0.056

-

-

-

Semicontronic

India . 1,821,223 parts In-Stock

1+ parts

$0.082

100+ parts

$0.080

1k+ parts

$0.080

10k+ parts

-

1,821,223

$0.082

$0.080

$0.080

-

Corphita

USA . 775 parts In-Stock

1+ parts

$0.087

100+ parts

-

1k+ parts

-

10k+ parts

-

775

$0.087

-

-

-

Argo Parts USA

USA . 4,304 parts In-Stock

1+ parts

$0.088

100+ parts

-

1k+ parts

-

10k+ parts

$0.085

4,304

$0.088

-

-

$0.085

Continental Prestige Electronics

USA . 1,965 parts In-Stock

1+ parts

$0.088

100+ parts

-

1k+ parts

-

10k+ parts

$0.086

1,965

$0.088

-

-

$0.086

Modulus Dynamics

Lithuania . 25,499 parts In-Stock

1+ parts

$0.177

100+ parts

$0.170

1k+ parts

$0.163

10k+ parts

-

25,499

$0.177

$0.170

$0.163

-

Ampacity Inc.

Singapore . 1,821,055 parts In-Stock

1+ parts

$0.179

100+ parts

-

1k+ parts

-

10k+ parts

-

1,821,055

$0.179

-

-

-

AZTECH Wire

Italy . 913 parts In-Stock

1+ parts

$16.240

100+ parts

-

1k+ parts

-

10k+ parts

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913

$16.240

-

-

-

Perfect Parts

USA . 17,640 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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17,640

-

-

-

-

Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.086

1k+ parts

$0.083

10k+ parts

$0.082

2,000

-

$0.086

$0.083

$0.082

Overview

Enhance the protection of your electronic devices with the ESD205B102ELSE6327XTSA1 from Infineon Technologies. As a leading manufacturer in the industry, Infineon ensures top-quality transient suppression devices that guarantee maximum reliability and durability. Ideal for various applications, this single-configured, surface-mount device offers superior performance with its bidirectional polarity, avalanche technology, and gold terminal finish. With a nominal breakdown voltage of 8V and maximum clamping voltage of 8.5V, this product provides unparalleled protection against voltage surges, making it an essential component for safeguarding your valuable electronics. Trust Infineon to deliver unmatched value and peace of mind with the ESD205B102ELSE6327XTSA1.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes it easy to install and use in various applications.

Surface Mount: YES

Surface mount capability allows for easy installation on circuit boards without the need for additional mounting hardware.

Maximum Non Repetitive Peak Reverse Power Dissipation: 30 W

High power dissipation capability ensures protection against sudden spikes in voltage.

Nominal Breakdown Voltage: 8 V

Ideal breakdown voltage for protecting sensitive electronic components from voltage surges.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on circuit boards to optimize space usage.

No. of Terminals: 2

Simple design with only 2 terminals simplifies installation and connections.

Package Style (Meter): CHIP CARRIER

Chip carrier package style is compact and suitable for surface mount applications.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows for use in a wide range of environments.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature ensures reliable performance even in extreme cold conditions.

Terminal Finish: GOLD

Gold terminal finish provides excellent conductivity and corrosion resistance.

Terminal Position: BOTTOM

Bottom terminal position allows for easy soldering and connection on circuit boards.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type is specifically designed for transient suppression, offering reliable protection.

Technology: AVALANCHE

Avalanche technology ensures efficient and rapid response to voltage spikes for effective protection.

Terminal Form: NO LEAD

No lead terminal form is environmentally friendly and easy to handle during installation.

Maximum Repetitive Peak Reverse Voltage: 5.5 V

Low repetitive peak reverse voltage rating provides effective protection for sensitive components.

Polarity: BIDIRECTIONAL

Bidirectional polarity allows for protection from voltage spikes in both directions.

Maximum Clamping Voltage: 8.5 V

Low clamping voltage ensures that connected components are not subjected to excessive voltage levels.

Diode Element Material: SILICON

Silicon diode element material offers high performance and reliability for transient suppression applications.

Technical Specifications

Transient Suppression Devices ESD205B102ELSE6327XTSA1 attributes and parameters. Explore more Transient Suppression Devices devices from Infineon Technologies

Specs

Additional Features:

LOW CAPACITANCE

Nominal Breakdown Voltage:

8 V

Maximum Clamping Voltage:

8.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-XBCC-N2

JESD-609 Code:

e4

Maximum Non Repetitive Peak Reverse Power Dissipation:

30 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

CHIP CARRIER

Polarity:

BIDIRECTIONAL

Maximum Repetitive Peak Reverse Voltage:

5.5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

GOLD

Terminal Form:

Terminal Position:

Trade Compliance

ESD205B102ELSE6327XTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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