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ESD218B102ELSE6327XTSA1

Infineon Technologies

ESD218B102ELSE6327XTSA1 by Infineon Technologies

ESD218B102ELSE6327XTSA1 by Infineon Tech is a unidirectional Trans Voltage Suppressor Diode with 24-30V breakdown voltage. It has a 67W peak reverse power dissipation, suitable for transient suppression in electronics. Compliant with IEC standards, it operates b/w -55 to 150°C, making it ideal for protecting sensitive components from voltage spikes.

Median Price

$0.066

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 10,699 parts In-Stock

1+ parts

$0.347

100+ parts

$0.133

1k+ parts

$0.086

10k+ parts

-

10,699

$0.347

$0.133

$0.086

-

DigiKey

USA . 1,874 parts In-Stock

1+ parts

$0.360

100+ parts

$0.140

1k+ parts

$0.092

10k+ parts

-

1,874

$0.360

$0.140

$0.092

-

Rochester

USA . 5,490,000 parts In-Stock

1+ parts

-

100+ parts

$0.066

1k+ parts

$0.055

10k+ parts

$0.049

5,490,000

-

$0.066

$0.055

$0.049

Verical

USA . 5,490,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.061

5,490,000

-

-

-

$0.061

Chip1Stop

Japan . 21,699 parts In-Stock

1+ parts

-

100+ parts

$0.064

1k+ parts

$0.048

10k+ parts

-

21,699

-

$0.064

$0.048

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 871 parts In-Stock

1+ parts

$0.051

100+ parts

-

1k+ parts

-

10k+ parts

-

871

$0.051

-

-

-

Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.090

100+ parts

-

1k+ parts

-

10k+ parts

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500

$0.090

-

-

-

Vyrian

USA . 1,125,069 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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1,125,069

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-

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Chip Stock

USA . 21,430 parts In-Stock

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21,430

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-

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SPM Sales

USA . 801 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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801

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,565,164 parts In-Stock

1+ parts

$0.046

100+ parts

-

1k+ parts

-

10k+ parts

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1,565,164

$0.046

-

-

-

Semicontronic

India . 1,565,012 parts In-Stock

1+ parts

$0.046

100+ parts

$0.045

1k+ parts

$0.045

10k+ parts

-

1,565,012

$0.046

$0.045

$0.045

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Corphita

USA . 735 parts In-Stock

1+ parts

$0.049

100+ parts

-

1k+ parts

-

10k+ parts

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735

$0.049

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Component Stockers USA

USA . 3,270,735 parts In-Stock

1+ parts

$0.060

100+ parts

$0.050

1k+ parts

$0.050

10k+ parts

$0.050

3,270,735

$0.060

$0.050

$0.050

$0.050

Corohmni

South Africa . 27 parts In-Stock

1+ parts

$0.065

100+ parts

-

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-

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27

$0.065

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Aranea Global

USA . 500 parts In-Stock

1+ parts

$0.088

100+ parts

-

1k+ parts

$0.085

10k+ parts

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500

$0.088

-

$0.085

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Continental Prestige Electronics

USA . 5,616 parts In-Stock

1+ parts

$0.090

100+ parts

-

1k+ parts

-

10k+ parts

$0.088

5,616

$0.090

-

-

$0.088

Argo Parts USA

USA . 3,316 parts In-Stock

1+ parts

$0.090

100+ parts

-

1k+ parts

-

10k+ parts

$0.087

3,316

$0.090

-

-

$0.087

Aztec Data Supply Inc.

USA . 4,450 parts In-Stock

1+ parts

$0.100

100+ parts

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10k+ parts

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4,450

$0.100

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Modulus Dynamics

Lithuania . 6,427 parts In-Stock

1+ parts

$0.147

100+ parts

$0.141

1k+ parts

$0.135

10k+ parts

-

6,427

$0.147

$0.141

$0.135

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Perfect Parts

USA . 33,600 parts In-Stock

1+ parts

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33,600

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Overview

Enhance the reliability of your electronic devices with the ESD218B102ELSE6327XTSA1 from Infineon Technologies. As a leading manufacturer in the industry, Infineon delivers top-quality Transient Suppression Devices that provide unmatched protection against voltage spikes and surges. Ideal for a wide range of applications, this single-configured device is designed for surface mount installations and offers a maximum non-repetitive peak reverse power dissipation of 67 W. With a wide operating temperature range and adherence to strict industry standards, this chip carrier package ensures optimal performance and peace of mind for customers seeking durable and efficient transient suppression solutions. Upgrade your electronics today with the ESD218B102ELSE6327XTSA1 and experience the superior quality and value that only Infineon can deliver.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes it easy to install and use in different applications without the complexity of multiple components.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and simplifying assembly.

Maximum Non Repetitive Peak Reverse Power Dissipation: 67 W

High maximum non repetitive peak reverse power dissipation ensures durability and reliable protection against transient voltage spikes.

Package Shape: RECTANGULAR

Rectangular package shape helps in efficient placement and positioning within electronic devices.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process and reduces the chances of errors during installation.

Package Style (Meter): CHIP CARRIER

Chip carrier package style provides a compact and secure housing for the transient suppression device.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures the device can withstand harsh environmental conditions without failing.

Minimum Operating Temperature: -55 °C

Low minimum operating temperature allows the device to function effectively even in extreme cold environments.

Terminal Finish: GOLD

Gold terminal finish ensures high conductivity and corrosion resistance for reliable performance over time.

Terminal Position: BOTTOM

Bottom terminal position makes it easier to mount onto circuit boards and facilitates efficient routing of connections.

Minimum Breakdown Voltage: 24.3 V

Having a higher minimum breakdown voltage provides better protection against voltage spikes and surges.

Maximum Breakdown Voltage: 30 V

Appropriate maximum breakdown voltage ensures protection of connected components while allowing efficient current flow under normal conditions.

Reference Standard: IEC-61000-4-2, 4-4, 4-5

Compliance with industry standards ensures the device meets quality and safety requirements for reliable operation.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode type is specifically designed for transient voltage suppression, offering effective protection for sensitive electronics.

Technology: AVALANCHE

Avalanche technology provides quick response to transient voltage spikes, diverting excess energy to protect connected devices.

Terminal Form: NO LEAD

No lead terminal form simplifies the installation process and reduces the risk of lead-related issues in electronic applications.

Maximum Repetitive Peak Reverse Voltage: 24 V

Maximum repetitive peak reverse voltage ensures consistent protection against reverse polarity and voltage spikes.

Polarity: BIDIRECTIONAL

Bidirectional polarity allows the device to protect against voltage spikes in both directions, enhancing overall protection capability.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and reliability in transient suppression, ensuring long-lasting performance.

Technical Specifications

Transient Suppression Devices ESD218B102ELSE6327XTSA1 attributes and parameters. Explore more Transient Suppression Devices devices from Infineon Technologies

Specs

Additional Features:

LOW CAPACITANCE

Maximum Breakdown Voltage:

30 V

Minimum Breakdown Voltage:

24.3 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-XBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

67 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

CHIP CARRIER

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-4, 4-5

Maximum Repetitive Peak Reverse Voltage:

24 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

GOLD

Terminal Form:

Terminal Position:

Trade Compliance

ESD218B102ELSE6327XTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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