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ESD245B1W0201E6327XTSA1

Infineon Technologies

ESD245B1W0201E6327XTSA1 by Infineon Technologies

ESD245B1W0201E6327XTSA1 by Infineon is a SINGLE TRANS VOLTAGE SUPPRESSOR DIODE with 44W power dissipation, 0.03uA reverse current, and 5.5V reverse voltage. It is used for transient suppression in applications requiring protection against ESD events according to IEC-61000-4 standards.

Median Price

$0.025

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 6 parts In-Stock

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$0.012

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6

$0.012

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Mouser Electronics

USA . 130,615 parts In-Stock

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$0.140

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$0.036

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$0.029

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$0.023

130,615

$0.140

$0.036

$0.029

$0.023

Rochester

USA . 1,531,978 parts In-Stock

1+ parts

-

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$0.021

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$0.018

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$0.016

1,531,978

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$0.021

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$0.016

Verical

USA . 1,531,978 parts In-Stock

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RS (Exports)

UK . 30,000 parts In-Stock

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Farnell

UK . 8,980 parts In-Stock

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$0.020

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8,980

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$0.020

$0.020

Element14

Singapore . 8,980 parts In-Stock

1+ parts

-

100+ parts

$0.074

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$0.041

10k+ parts

$0.040

8,980

-

$0.074

$0.041

$0.040

Chip1Stop

Japan . 8,750 parts In-Stock

1+ parts

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$0.029

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$0.018

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8,750

-

$0.029

$0.018

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Distributors (In-Stock)

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Digiode

USA . 405 parts In-Stock

1+ parts

$0.011

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405

$0.011

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Nova Conductors

Japan . 100 parts In-Stock

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$0.043

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100

$0.043

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Vyrian

USA . 614,065 parts In-Stock

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Chip Stock

USA . 3,710 parts In-Stock

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SPM Sales

USA . 580 parts In-Stock

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580

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Prism Electronics

USA . 48 parts In-Stock

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Ampacity Inc.

Singapore . 998,143 parts In-Stock

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$0.010

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Semicontronic

India . 997,944 parts In-Stock

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$0.010

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$0.010

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$0.010

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Corphita

USA . 237 parts In-Stock

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Argo Parts USA

USA . 944 parts In-Stock

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$0.043

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$0.042

944

$0.043

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$0.042

Advanced Electronics

New Zealand . 64 parts In-Stock

1+ parts

$0.044

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$0.044

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$0.044

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64

$0.044

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Aztec Data Supply Inc.

USA . 2,796 parts In-Stock

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$0.084

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Corohmni

South Africa . 452 parts In-Stock

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$0.086

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452

$0.086

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Modulus Dynamics

Lithuania . 23,449 parts In-Stock

1+ parts

$0.090

100+ parts

$0.086

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$0.083

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23,449

$0.090

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$0.083

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iodParts Technologies Inc.

India . 30,000 parts In-Stock

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Continental Prestige Electronics

USA . 12,770 parts In-Stock

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$0.049

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$0.026

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12,770

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$0.026

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A-Z Elektronik GmbH

Germany . 2,250 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

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$0.042

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$0.041

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$0.040

2,000

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$0.040

Overview

Enhance your electronic devices with the ESD245B1W0201E6327XTSA1 from Infineon Technologies. As leaders in the industry, Infineon ensures top-quality transient suppression devices that provide reliable protection against voltage spikes. This single-configured, surface-mount chip carrier offers a maximum clamping voltage of 9V and a bidirectional polarity, making it ideal for a wide range of applications. Trust Infineon to deliver exceptional performance and peace of mind, knowing your equipment is safeguarded from electrical hazards. Elevate your products with the superior technology and advanced design of the ESD245B1W0201E6327XTSA1.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes it easy to integrate into a circuit without the need for complex wiring or setup.

Surface Mount: YES

Surface mount capability allows for easy installation on PCBs, saving space and enabling efficient design layouts.

Maximum Non Repetitive Peak Reverse Power Dissipation: 44 W

High power dissipation capacity ensures reliable protection against transient voltage spikes.

Maximum Reverse Current: 0.03 uA

Low reverse current ensures minimal power loss and efficient operation of the device.

Package Shape: RECTANGULAR

Rectangular shape facilitates easy handling and soldering during assembly.

Reverse Test Voltage: 5.5 V

Capable of withstanding reverse voltages up to 5.5 V, providing robust protection for sensitive components.

No. of Terminals: 2

Simple two-terminal design simplifies circuit integration and reduces chances of wiring errors.

Package Style (Meter): CHIP CARRIER

Chip carrier package style offers compact size and efficient heat dissipation, ideal for space-constrained applications.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliable performance in a wide range of environmental conditions.

Minimum Operating Temperature: -55 °C

Wide operating temperature range allows for usage in extreme temperature environments without compromising functionality.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy PCB mounting and ensures stable connections.

Reference Standard: IEC-61000-4-2, 4-4, 4-5

Compliance with international standards ensures reliability and effectiveness of transient suppression capabilities.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Transistor voltage suppressor diode type provides efficient protection against voltage surges and transients.

Technology: AVALANCHE

Avalanche technology offers high surge handling capability and fast response times for effective transient suppression.

Terminal Form: NO LEAD

No-lead terminal form simplifies installation and reduces the risk of solder joint failures.

Maximum Repetitive Peak Reverse Voltage: 5.5 V

Capable of withstanding repetitive peak reverse voltages of 5.5 V, ensuring long-term reliability and protection.

Polarity: BIDIRECTIONAL

Bidirectional polarity allows for protection against voltage spikes in both directions, enhancing overall system reliability.

Maximum Clamping Voltage: 9 V

Low maximum clamping voltage ensures effective suppression of transient voltage spikes to protect sensitive components.

Diode Element Material: SILICON

Silicon diode element material offers high performance and durability for long-term protection against transient events.

Technical Specifications

Transient Suppression Devices ESD245B1W0201E6327XTSA1 attributes and parameters. Explore more Transient Suppression Devices devices from Infineon Technologies

Specs

Maximum Clamping Voltage:

9 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-XBCC-N2

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

44 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

CHIP CARRIER

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-4, 4-5

Maximum Repetitive Peak Reverse Voltage:

5.5 V

Maximum Reverse Current:

.03 uA

Reverse Test Voltage:

5.5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

ESD245B1W0201E6327XTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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