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ESD230B1W0201E6327XTSA1

Infineon Technologies

ESD230B1W0201E6327XTSA1 by Infineon Technologies

ESD230B1W0201E6327XTSA1 by Infineon is a single transient suppression device with 56W peak power dissipation, 8V breakdown voltage, and 0.1uA reverse current. It is a bidirectional trans voltage suppressor diode for surge protection in applications compliant with IEC-61000-4 standards. Operating temperature ranges from -55 to 125 °C.

Median Price

$0.081

Lifecycle Status

Suppliers In-Stock

17

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1k+

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Chip1Stop

Japan . 28 parts In-Stock

1+ parts

$0.024

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28

$0.024

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Arrow

USA . 27,021 parts In-Stock

1+ parts

$0.033

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$0.030

1k+ parts

$0.027

10k+ parts

$0.025

27,021

$0.033

$0.030

$0.027

$0.025

Mouser Electronics

USA . 15,154 parts In-Stock

1+ parts

$0.160

100+ parts

$0.064

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$0.046

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15,154

$0.160

$0.064

$0.046

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DigiKey

USA . 12,812 parts In-Stock

1+ parts

$0.160

100+ parts

$0.064

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$0.046

10k+ parts

$0.045

12,812

$0.160

$0.064

$0.046

$0.045

Newark

USA . 5,827 parts In-Stock

1+ parts

$0.165

100+ parts

$0.066

1k+ parts

$0.048

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5,827

$0.165

$0.066

$0.048

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Rochester

USA . 31,357,859 parts In-Stock

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-

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$0.025

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$0.020

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$0.018

31,357,859

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$0.025

$0.020

$0.018

Verical

USA . 14,495,959 parts In-Stock

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14,495,959

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Future Electronics

Canada . 60,000 parts In-Stock

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RS (Exports)

UK . 15,000 parts In-Stock

1+ parts

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100+ parts

$0.171

1k+ parts

$0.104

10k+ parts

$0.078

15,000

-

$0.171

$0.104

$0.078

EBV Elektronik

Germany . 15,000 parts In-Stock

1+ parts

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15,000

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Element14

Singapore . 7,910 parts In-Stock

1+ parts

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100+ parts

$0.081

1k+ parts

$0.043

10k+ parts

$0.042

7,910

-

$0.081

$0.043

$0.042

Farnell

UK . 6,265 parts In-Stock

1+ parts

-

100+ parts

$0.052

1k+ parts

$0.039

10k+ parts

$0.039

6,265

-

$0.052

$0.039

$0.039

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Digiode

USA . 950 parts In-Stock

1+ parts

$0.021

100+ parts

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950

$0.021

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.037

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100

$0.037

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Vyrian

USA . 2,172,431 parts In-Stock

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NAC Semi

USA . 15,000 parts In-Stock

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Greenchips

USA . 14,950 parts In-Stock

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Ampacity Inc.

Singapore . 2,170,384 parts In-Stock

1+ parts

$0.019

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$0.019

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Corphita

USA . 285 parts In-Stock

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$0.020

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Modulus Dynamics

Lithuania . 16,015 parts In-Stock

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$0.020

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$0.019

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$0.018

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16,015

$0.020

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Argo Parts USA

USA . 252 parts In-Stock

1+ parts

$0.037

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$0.036

252

$0.037

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-

$0.036

Advanced Electronics

New Zealand . 768 parts In-Stock

1+ parts

$0.038

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$0.038

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$0.038

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768

$0.038

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Aztec Data Supply Inc.

USA . 1,651 parts In-Stock

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$0.050

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Corohmni

South Africa . 424 parts In-Stock

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$0.169

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424

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Continental Prestige Electronics

USA . 8,485 parts In-Stock

1+ parts

$0.195

100+ parts

$0.085

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$0.032

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$0.022

8,485

$0.195

$0.085

$0.032

$0.022

Epart123

USA . 210,000 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Perfect Parts

USA . 168 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$0.036

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$0.035

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$0.034

100

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$0.036

$0.035

$0.034

Overview

Looking for reliable transient suppression devices? Look no further than the ESD230B1W0201E6327XTSA1 by Infineon Technologies. With a reputation for high-quality products, Infineon brings you a single-configured surface mount device that offers maximum protection against voltage spikes. Perfect for a wide range of applications, this chip carrier package boasts a bidirectional diode element material and avalanche technology for superior performance. Trust in the ESD230B1W0201E6327XTSA1 to safeguard your electronics and keep them running smoothly.

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies installation and reduces complexity.

Surface Mount: YES

Surface mount design saves space and allows for easy integration onto circuit boards.

Maximum Non Repetitive Peak Reverse Power Dissipation: 56 W

High power dissipation capability ensures protection against sudden power surges or spikes.

Nominal Breakdown Voltage: 8 V

Suitable for applications requiring precise breakdown voltage protection.

Maximum Reverse Current: 0.1 uA

Low reverse current provides efficient protection without causing leakage.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and secure mounting.

Reverse Test Voltage: 5.5 V

Effective reverse test voltage for ensuring product reliability and performance.

No. of Terminals: 2

Simple two-terminal design for easy connection and installation.

Package Style (Meter): CHIP CARRIER

Chip carrier package style provides durability and protection for the product.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures product reliability in various environments.

Minimum Operating Temperature: -55 °C

Wide operating temperature range allows for usage in extreme conditions.

Terminal Position: BOTTOM

Bottom terminal position for ease of connection in circuit layouts.

Minimum Breakdown Voltage: 6.05 V

Close to nominal breakdown voltage for added protection against voltage spikes.

Reference Standard: IEC-61000-4-2, 4-4, 4-5

Compliance with international standards ensures product quality and performance.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specific diode type designed for transient suppression, offering reliable protection.

Technology: AVALANCHE

Avalanche technology ensures rapid response to transient events, safeguarding connected devices.

Terminal Form: NO LEAD

No lead terminal form for solder-free connection and enhanced durability.

Maximum Repetitive Peak Reverse Voltage: 5.5 V

Suitable for applications requiring protection within the specified voltage range.

Polarity: BIDIRECTIONAL

Bidirectional polarity for protection against both positive and negative voltage transients.

Maximum Clamping Voltage: 15 V

High clamping voltage capability prevents voltage spikes from reaching connected devices.

Diode Element Material: SILICON

Silicon diode element material for reliable performance and durability.

Technical Specifications

Transient Suppression Devices ESD230B1W0201E6327XTSA1 attributes and parameters. Explore more Transient Suppression Devices devices from Infineon Technologies

Specs

Minimum Breakdown Voltage:

6.05 V

Nominal Breakdown Voltage:

8 V

Maximum Clamping Voltage:

15 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-XBCC-N2

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

56 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

CHIP CARRIER

Polarity:

BIDIRECTIONAL

Reference Standard:

IEC-61000-4-2, 4-4, 4-5

Maximum Repetitive Peak Reverse Voltage:

5.5 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

5.5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

ESD230B1W0201E6327XTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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