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YES Diodes & Rectifiers 2,400+

Diodes & Rectifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Application Minimum Breakdown Voltage Case Connection Config Diode Element Material Diode Type Maximum Forward Voltage (VF) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Non Repetitive Peak Forward Current No. of Elements No. of Phases No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Maximum Reverse Recovery Time Reverse Test Voltage Sub-Category Surface Mount Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s)
SKL13BR5G by Taiwan Semiconductor

SKL13BR5G

Taiwan Semiconductor

SKL13BR5G by Taiwan Semiconductor is a Schottky rectifier diode with a max forward voltage of 0.39V and output current of 1A. It operates b/w -55°C to 125°C, making it suitable for various applications requiring high-speed switching and low power loss in compact electronic devices. The diode's small outline package with matte tin finish enables easy surface mount installation in space-constrained designs.

LOW POWER LOSS

SINGLE

SILICON

RECTIFIER DIODE

.39 V

DO-214AA

R-PDSO-C2

e3

1

50 A

1

1

2

125 Cel

-55 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

30 V

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

C BEND

DUAL

IDC51D120T6MX1SA3 by Infineon Technologies

IDC51D120T6MX1SA3

Infineon Technologies

IDC51D120T6MX1SA3 by Infineon Technologies is a single rectifier diode with a max output current of 100A and max repetitive peak reverse voltage of 1200V. It operates in temperatures ranging from -40°C to 175°C, making it suitable for fast soft recovery applications. This surface-mount diode has a low max forward voltage of 2.05V and low reverse current of 18uA, ideal for high-power electronic systems.

FAST SOFT RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

2.05 V

R-XUUC-N1

1

1

1

175 Cel

-40 Cel

100 A

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

1200 V

18 uA

YES

NO LEAD

UPPER

NOT SPECIFIED

IDC73D120T6MX1SA2 by Infineon Technologies

IDC73D120T6MX1SA2

Infineon Technologies

RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: RECTANGULAR;

FAST SOFT RECOVERY MEDIUM POWER

SINGLE

SILICON

RECTIFIER DIODE

2.05 V

R-XUUC-N1

1

1

1

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

1200 V

26 uA

YES

NO LEAD

UPPER

NOT SPECIFIED

SIDC06D65C8X1SA1 by Infineon Technologies

SIDC06D65C8X1SA1

Infineon Technologies

RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: RECTANGULAR;

FAST SOFT RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

1.87 V

R-XUUC-N1

1

1

1

175 Cel

-40 Cel

20 A

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

650 V

.24 uA

YES

NO LEAD

UPPER

NOT SPECIFIED

SIDC08D120H8X1SA1 by Infineon Technologies

SIDC08D120H8X1SA1

Infineon Technologies

RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;

FAST SOFT RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

2 V

S-XUUC-N1

1

1

1

150 Cel

-40 Cel

150 A

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

1200 V

27 uA

YES

NO LEAD

UPPER

NOT SPECIFIED

SIDC08D60C8X1SA3 by Infineon Technologies

SIDC08D60C8X1SA3

Infineon Technologies

RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: RECTANGULAR;

FAST SOFT RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

1.95 V

R-XUUC-N1

1

1

1

175 Cel

-40 Cel

30 A

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

600 V

27 uA

YES

NO LEAD

UPPER

NOT SPECIFIED

SIDC14D60C8X1SA2 by Infineon Technologies

SIDC14D60C8X1SA2

Infineon Technologies

RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: RECTANGULAR;

FAST SOFT RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

1.9 V

R-XUUC-N1

1

1

1

175 Cel

-40 Cel

50 A

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

600 V

27 uA

YES

NO LEAD

UPPER

NOT SPECIFIED

SIDC30D120H8X1SA4 by Infineon Technologies

SIDC30D120H8X1SA4

Infineon Technologies

RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;

FAST SOFT RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

S-XUUC-N1

1

1

1

175 Cel

-40 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

1200 V

27 uA

YES

NO LEAD

UPPER

NOT SPECIFIED

SIDC53D120H8X1SA1 by Infineon Technologies

SIDC53D120H8X1SA1

Infineon Technologies

RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;

FAST SOFT RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

S-XUUC-N1

1

1

1

175 Cel

-40 Cel

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

1200 V

27 uA

YES

NO LEAD

UPPER

NOT SPECIFIED

SIDC81D120H8X1SA3 by Infineon Technologies

SIDC81D120H8X1SA3

Infineon Technologies

RECTIFIER DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: SQUARE;

FAST SOFT RECOVERY

SINGLE

SILICON

RECTIFIER DIODE

2 V

S-XUUC-N1

1

1

1

150 Cel

-40 Cel

150 A

UNSPECIFIED

SQUARE

UNCASED CHIP

NOT SPECIFIED

1200 V

27 uA

YES

NO LEAD

UPPER

NOT SPECIFIED

BAS1602WH6327XTSA1 by Infineon Technologies

BAS1602WH6327XTSA1

Infineon Technologies

BAS1602WH6327XTSA1 by Infineon Technologies is a single rectifier diode with a max output current of 0.2A and a max repetitive peak reverse voltage of 85V. It is designed for applications requiring fast switching speeds, such as automotive electronics, with a small outline package style suitable for surface mount assembly.

SINGLE

SILICON

RECTIFIER DIODE

R-PDSO-F2

1

1

2

150 Cel

.2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

.25 W

AEC-Q101

85 V

.004 us

YES

FLAT

DUAL

NOT SPECIFIED

BAS16UE6327HTSA1 by Infineon Technologies

BAS16UE6327HTSA1

Infineon Technologies

BAS16UE6327HTSA1 by Infineon Technologies is a rectifier diode with 3 separate elements, max output current of 0.2A, and max repetitive peak reverse voltage of 85V. It is designed for applications requiring fast switching speeds and high efficiency in small outline packages. Ideal for automotive electronics due to AEC-Q101 reference standard compliance.

SEPARATE, 3 ELEMENTS

SILICON

RECTIFIER DIODE

R-PDSO-G6

e3

1

3

6

150 Cel

.2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

AEC-Q101

85 V

.004 us

YES

TIN

GULL WING

DUAL

BAS7002WH6327XTSA1 by Infineon Technologies

BAS7002WH6327XTSA1

Infineon Technologies

BAS7002WH6327XTSA1 by Infineon is a Schottky rectifier diode with max forward voltage of 0.41V and max output current of 0.07A. It operates b/w -55 to 125°C, ideal for automotive applications due to AEC-Q101 standard compliance and small outline package style.

SINGLE

SILICON

RECTIFIER DIODE

.41 V

R-PDSO-F2

e3

1

.1 A

1

1

2

125 Cel

-55 Cel

.07 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

AEC-Q101

70 V

Rectifier Diodes

YES

SCHOTTKY

TIN

FLAT

DUAL

BAV70UE6327HTSA1 by Infineon Technologies

BAV70UE6327HTSA1

Infineon Technologies

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

2 BANKS, COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

R-PDSO-G6

e3

1

4

6

150 Cel

.2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.25 W

AEC-Q101

85 V

.004 us

YES

TIN

GULL WING

DUAL

BAW56UE6327HTSA1 by Infineon Technologies

BAW56UE6327HTSA1

Infineon Technologies

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

2 BANKS, COMMON ANODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

R-PDSO-G6

e3

1

4

6

150 Cel

.2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.25 W

AEC-Q101

85 V

.004 us

YES

TIN

GULL WING

DUAL

BAS3020BH6327XTSA1 by Infineon Technologies

BAS3020BH6327XTSA1

Infineon Technologies

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;

LOW LEAKAGE CURRENT

EFFICIENCY

SINGLE

SILICON

RECTIFIER DIODE

.6 V

R-PDSO-G6

1

10 A

1

1

6

125 Cel

-55 Cel

2 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

30 V

200 uA

YES

SCHOTTKY

GULL WING

DUAL

STPS60L30CKY-TR by STMicroelectronics

STPS60L30CKY-TR

STMicroelectronics

STPS60L30CKY-TR by STMicroelectronics is a Schottky rectifier diode with 30V max repetitive peak reverse voltage and 0.49V max forward voltage. It has common cathode config, 2 elements, and is suitable for fast recovery power applications. Operating temp ranges from -40 to 150 °C with Ni/Pd/Au terminal finish.

FAST RECOVERY POWER

CATHODE

COMMON CATHODE, 2 ELEMENTS

SILICON

RECTIFIER DIODE

.49 V

R-PDSO-G20

e4

3

250 A

2

1

20

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

AEC-Q101

30 V

2000 uA

YES

SCHOTTKY

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

DUAL

30

MBR10100MFST3G by Onsemi

MBR10100MFST3G

Onsemi

MBR10100MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 10A and max repetitive peak reverse voltage of 100V. It operates efficiently in temperatures ranging from -55 °C to 175°C, making it suitable for various applications requiring high-speed switching and low forward voltage drop. The diode's small outline package with surface mount capability enhances its versatility in electronic circuit designs.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.95 V

R-PDSO-F5

e3

1

150 A

1

1

5

175 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

100 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

MBR1045MFST1G by Onsemi

MBR1045MFST1G

Onsemi

MBR1045MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 10A and a max repetitive peak reverse voltage of 45V. It is designed for applications requiring high efficiency, operates b/w -55 to 150 °C, and features a matte tin terminal finish.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.75 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

45 V

500 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR1045MFST3G by Onsemi

MBR1045MFST3G

Onsemi

MBR1045MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 10A and max repetitive peak reverse voltage of 45V. It is designed for applications requiring high efficiency, operates b/w -55 to 150 °C, and features a surface-mount package style for easy installation.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.75 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

45 V

500 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

MBR1240MFST1G by Onsemi

MBR1240MFST1G

Onsemi

MBR1240MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 12A and max repetitive peak reverse voltage of 40V. It operates efficiently at temperatures ranging from -55 °C to 150°C, making it suitable for various applications requiring high power efficiency. This diode is designed for surface mount installation in electronic devices.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.68 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-55 Cel

12 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

40 V

500 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR1240MFST3G by Onsemi

MBR1240MFST3G

Onsemi

MBR1240MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 12A and a max forward voltage of 0.68V. It operates efficiently in temperatures ranging from -55 to 150 °C, making it suitable for various applications requiring high power efficiency. This diode has a package style of small outline and features surface mount technology for easy installation.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.68 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-55 Cel

12 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

40 V

500 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR2045EMFST1G by Onsemi

MBR2045EMFST1G

Onsemi

MBR2045EMFST1G by Onsemi is a Schottky rectifier diode with 45V max repetitive peak reverse voltage, 20A max output current, and 0.64V max forward voltage. It is used for efficiency applications in temperatures ranging from -55 °C to 150°C.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.64 V

R-PDSO-F5

e3

1

400 A

1

1

5

150 Cel

-55 Cel

20 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

45 V

400 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR30H100MFST1G by Onsemi

MBR30H100MFST1G

Onsemi

MBR30H100MFST1G by Onsemi is a Schottky rectifier diode with 100V reverse voltage, 30A output current, and 0.9V forward voltage. It is used for efficiency applications in temperatures ranging from -55°C to 175°C. The diode has a plastic/epoxy package, matte tin finish, and dual terminals for surface mount assembly.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.9 V

R-PDSO-F5

e3

1

300 A

1

1

5

175 Cel

-55 Cel

30 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

100 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR830MFST1G by Onsemi

MBR830MFST1G

Onsemi

MBR830MFST1G by Onsemi is a Schottky rectifier diode with 30V max reverse voltage and 8A max output current. It operates b/w -40 to 150 °C, ideal for efficiency applications. This single-configured diode has a matte tin finish, flat terminal form, and small outline package style.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.7 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-40 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

30 V

200 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR830MFST3G by Onsemi

MBR830MFST3G

Onsemi

MBR830MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 8A and forward voltage of 0.7V. It operates efficiently in temperatures ranging from -40 to 150 °C, making it suitable for various applications requiring high-speed switching and low power loss. With a max repetitive peak reverse voltage of 30V, this diode is ideal for use in electronics where reliability and performance are crucial.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.7 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-40 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

30 V

200 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

MBR860MFST1G by Onsemi

MBR860MFST1G

Onsemi

MBR860MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 8A and max repetitive peak reverse voltage of 60V. It operates efficiently in temperatures ranging from -55 °C to 175°C, making it suitable for various applications requiring high efficiency and low forward voltage drop. This diode is designed for surface mount installation in electronic circuits.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.8 V

R-PDSO-F5

e3

1

150 A

1

1

5

175 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

60 V

150 uA

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

MBR860MFST3G by Onsemi

MBR860MFST3G

Onsemi

MBR860MFST3G by Onsemi is a Schottky rectifier diode with 60V reverse voltage, 8A output current, and 0.8V forward voltage. It is used for efficiency applications in temperatures ranging from -55 to 175 °C. This single-config diode has a small outline package with dual terminals and surface mount capability.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.8 V

R-PDSO-F5

e3

1

150 A

1

1

5

175 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

60 V

150 uA

YES

SCHOTTKY

TIN

FLAT

DUAL

30

MBR8H100MFST3G by Onsemi

MBR8H100MFST3G

Onsemi

MBR8H100MFST3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.9V and max output current of 8A. It is used for efficiency applications, has a max operating temperature of 175°C, and comes in a small outline package with dual terminals.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.9 V

R-PDSO-F5

e3

1

75 A

1

1

5

175 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

2 uA

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

30

NRVB10100MFST3G by Onsemi

NRVB10100MFST3G

Onsemi

NRVB10100MFST3G by Onsemi is a Schottky rectifier diode with 100V reverse voltage and 10A output current. It operates b/w -55 to 175 °C, making it ideal for high-efficiency applications. This single-configured diode comes in a small outline package with matte tin terminals for surface mount assembly.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.95 V

R-PDSO-F5

e3

1

150 A

1

1

5

175 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

100 V

100 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVB1045MFST3G by Onsemi

NRVB1045MFST3G

Onsemi

NRVB1045MFST3G by Onsemi is a Schottky rectifier diode with 45V max repetitive peak reverse voltage and 10A max output current. It operates b/w -55 to 150 °C, ideal for efficiency applications. This single-config diode has a small outline package style and matte tin terminal finish for surface mount assembly.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.75 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

45 V

500 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVB1240MFST3G by Onsemi

NRVB1240MFST3G

Onsemi

NRVB1240MFST3G by Onsemi is a Schottky rectifier diode with 40V reverse voltage, 12A output current, and 0.68V forward voltage. It operates b/w -55 to 150 °C and has a max reverse current of 500 uA. Ideal for efficiency applications in automotive electronics due to AEC-Q101 compliance.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.68 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-55 Cel

12 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

40 V

500 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVB830MFST1G by Onsemi

NRVB830MFST1G

Onsemi

NRVB830MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 8A and max reverse current of 200uA. It operates b/w -40 to 150°C, ideal for efficiency applications. This single-configured diode has a package style of small outline, suitable for surface mount assembly.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.7 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-40 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

30 V

200 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVB830MFST3G by Onsemi

NRVB830MFST3G

Onsemi

NRVB830MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 8A and max reverse voltage of 30V. It is designed for efficiency applications, operates b/w -40 to 150 °C, and features a surface-mount package style.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.7 V

R-PDSO-F5

e3

1

150 A

1

1

5

150 Cel

-40 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

30 V

200 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVB860MFST1G by Onsemi

NRVB860MFST1G

Onsemi

NRVB860MFST1G by Onsemi is a Schottky rectifier diode with 60V reverse voltage, 8A output current, and 0.8V forward voltage. It is designed for efficiency applications, operates b/w -55 to 175 °C, and has a max reverse current of 150 uA.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.8 V

R-PDSO-F5

e3

1

150 A

1

1

5

175 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

60 V

150 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVB860MFST3G by Onsemi

NRVB860MFST3G

Onsemi

NRVB860MFST3G by Onsemi is a Schottky rectifier diode with 60V reverse voltage, 8A output current, and 0.8V forward voltage. It is ideal for efficiency applications, operates b/w -55 to 175 °C, and has a max reverse current of 150 uA.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.8 V

R-PDSO-F5

e3

1

150 A

1

1

5

175 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

60 V

150 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVB8H100MFST3G by Onsemi

NRVB8H100MFST3G

Onsemi

NRVB8H100MFST3G by Onsemi is a Schottky rectifier diode with a max reverse current of 2uA and forward voltage of 0.9V. It operates b/w -55 to 175 °C, making it suitable for high-efficiency applications. With a max output current of 8A and peak reverse voltage of 100V, it is ideal for various electronic circuits.

LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.9 V

R-PDSO-F5

e3

1

75 A

1

1

5

175 Cel

-55 Cel

8 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

100 V

2 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

VS-10ETF12S-M3 by Vishay Intertechnology

VS-10ETF12S-M3

Vishay Intertechnology

VS-10ETF12S-M3 by Vishay Intertechnology is a single rectifier diode with a max output current of 10A and max repetitive peak reverse voltage of 1200V. It has a fast soft recovery application, operating b/w -40 to 150°C. Ideal for surface mount applications requiring high efficiency and low reverse current.

FREE WHEELING DIODE

FAST SOFT RECOVERY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

1.33 V

TO-263AB

R-PSSO-G2

1

155 A

1

1

2

150 Cel

-40 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

1200 V

100 uA

.31 us

YES

GULL WING

SINGLE

NRVTS12120MFST1G by Onsemi

NRVTS12120MFST1G

Onsemi

NRVTS12120MFST1G by Onsemi is a Schottky rectifier diode with 120V reverse voltage, 12A output current, and 0.83V forward voltage. It is used for efficiency applications in temperatures ranging from -55 to 150 °C. The diode has a max reverse current of 75uA and comes in a small outline package with matte tin terminals.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.83 V

R-PDSO-F5

e3

1

200 A

1

1

5

150 Cel

-55 Cel

12 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

120 V

75 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NRVTS12120MFST3G by Onsemi

NRVTS12120MFST3G

Onsemi

NRVTS12120MFST3G by Onsemi is a Schottky rectifier diode with 120V reverse voltage, 12A output current, and 0.83V forward voltage. It is used for efficiency applications in temperatures ranging from -55 to 150 °C. The diode has a max reverse current of 75uA and is AEC-Q101 compliant for automotive use.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.83 V

R-PDSO-F5

e3

1

200 A

1

1

5

150 Cel

-55 Cel

12 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

120 V

75 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NTS12120MFST1G by Onsemi

NTS12120MFST1G

Onsemi

NTS12120MFST1G by Onsemi is a Schottky rectifier diode with a max output current of 12A and max repetitive peak reverse voltage of 120V. It operates b/w -55 to 150 °C, ideal for efficiency applications. This single-configured diode has a package style of small outline and matte tin terminal finish.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.83 V

R-PDSO-F5

e3

1

200 A

1

1

5

150 Cel

-55 Cel

12 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

120 V

75 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NTS12120MFST3G by Onsemi

NTS12120MFST3G

Onsemi

NTS12120MFST3G by Onsemi is a Schottky rectifier diode with a max output current of 12A and max reverse voltage of 120V. It operates b/w -55 to 150 °C, suitable for efficiency applications. This single-configured diode has a surface-mount package style with tin terminal finish.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.83 V

R-PDSO-F5

e3

1

200 A

1

1

5

150 Cel

-55 Cel

12 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

120 V

75 uA

YES

SCHOTTKY

Tin (Sn)

FLAT

DUAL

30

SBRT25M60SLP-13 by Diodes Incorporated

SBRT25M60SLP-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 5; Surface Mount: YES; Package Shape: RECTANGULAR;

FREE WHEELING DIODE, HIGH RELIABILITY

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.6 V

R-PDSO-N5

e3

1

220 A

1

1

5

150 Cel

-55 Cel

25 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

60 V

150 uA

YES

MATTE TIN

NO LEAD

DUAL

30

SBRT25U50SLP-13 by Diodes Incorporated

SBRT25U50SLP-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 5; Surface Mount: YES; Package Shape: RECTANGULAR;

FREE WHEELING DIODE, HIGH RELIABILITY

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.52 V

R-PDSO-N5

e3

1

200 A

1

1

5

150 Cel

-55 Cel

25 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

50 V

500 uA

YES

MATTE TIN

NO LEAD

DUAL

30

SBRT25U80SLP-13 by Diodes Incorporated

SBRT25U80SLP-13

Diodes Incorporated

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 8; Surface Mount: YES; Package Shape: RECTANGULAR;

FREE WHEELING DIODE

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.61 V

R-PDSO-F8

e3

1

200 A

1

1

8

150 Cel

-55 Cel

25 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

80 V

500 uA

80 V

YES

MATTE TIN

FLAT

DUAL

30

NRVTS12120EMFST3G by Onsemi

NRVTS12120EMFST3G

Onsemi

NRVTS12120EMFST3G by Onsemi is a Schottky rectifier diode with a max output current of 12A and a max reverse current of 55uA. It operates b/w -55 °C to 175°C, making it suitable for high-efficiency applications. The diode has a max repetitive peak reverse voltage of 120V and is designed for surface mount installation in small outline packages.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.83 V

R-PDSO-F5

e3

1

200 A

1

1

5

175 Cel

-55 Cel

12 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

AEC-Q101

120 V

55 uA

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NTS10100EMFST1G by Onsemi

NTS10100EMFST1G

Onsemi

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 5; Surface Mount: YES; Package Shape: RECTANGULAR;

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.72 V

R-PDSO-F5

e3

1

200 A

1

1

5

175 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

50 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30

NTS10100EMFST3G by Onsemi

NTS10100EMFST3G

Onsemi

NTS10100EMFST3G by Onsemi is a Schottky rectifier diode with a max output current of 10A and max repetitive peak reverse voltage of 100V. It operates b/w -55 °C to 175°C, making it suitable for high-efficiency applications. This single-configured diode comes in a small outline package with matte tin terminals.

FREE WHEELING DIODE, LOW POWER LOSS

EFFICIENCY

CATHODE

SINGLE

SILICON

RECTIFIER DIODE

.72 V

R-PDSO-F5

e3

1

200 A

1

1

5

175 Cel

-55 Cel

10 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

100 V

50 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

FLAT

DUAL

30