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BAS1602WH6327XTSA1

Infineon Technologies

BAS1602WH6327XTSA1 by Infineon Technologies

BAS1602WH6327XTSA1 by Infineon Technologies is a single rectifier diode with a max output current of 0.2A and a max repetitive peak reverse voltage of 85V. It is designed for applications requiring fast switching speeds, such as automotive electronics, with a small outline package style suitable for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,090 parts In-Stock

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6,090

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VNN

France . 1,580 parts In-Stock

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1,580

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Digiode

USA . 555 parts In-Stock

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555

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Nova Conductors

Japan . 32 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 1,074 parts In-Stock

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$0.010

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1,074

$0.010

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Aztec Data Supply Inc.

USA . 2,956 parts In-Stock

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$0.036

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$0.036

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Modulus Dynamics

Lithuania . 13,747 parts In-Stock

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$0.186

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$0.179

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$0.171

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13,747

$0.186

$0.179

$0.171

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Corohmni

South Africa . 656 parts In-Stock

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$0.197

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656

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AZTECH Wire

Italy . 825 parts In-Stock

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$18.142

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Perfect Parts

USA . 71,501 parts In-Stock

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Continental Prestige Electronics

USA . 5,472 parts In-Stock

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Argo Parts USA

USA . 1,434 parts In-Stock

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Corphita

USA . 646 parts In-Stock

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Microchip USA

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Discover the unbeatable quality and reliability of the BAS1602WH6327XTSA1 by Infineon Technologies. As a leading manufacturer in the industry, Infineon Technologies delivers diodes and rectifiers that surpass all expectations. With its superior performance and versatility, this product is ideal for a wide range of applications. Experience the value and benefits that come with choosing the BAS1602WH6327XTSA1, offering customers unmatched advantages in efficiency and functionality. Elevate your projects with the trusted quality of Infineon Technologies.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the diode, making it suitable for various applications.

Surface Mount: YES

Allows for easy and efficient mounting on printed circuit boards, saving space and enhancing overall design flexibility.

Maximum Reverse Recovery Time: 0.004 us

The fast reverse recovery time of the diode ensures minimal power loss and efficient operation.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the diode can withstand harsh environmental conditions without compromising performance.

Maximum Power Dissipation: 0.25 W

The low power dissipation helps in reducing heat generation and maintaining the stability of the diode during operation.

Diode Type: RECTIFIER DIODE

The rectifier diode allows current to flow in one direction, making it ideal for converting AC to DC currents in various electronic applications.

Technical Specifications

Diodes & Rectifiers BAS1602WH6327XTSA1 attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

JESD-30 Code:

R-PDSO-F2

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

.25 W

Reference Standard:

AEC-Q101

Maximum Repetitive Peak Reverse Voltage:

85 V

Maximum Reverse Recovery Time:

.004 us

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

BAS1602WH6327XTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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