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IDC51D120T6MX1SA3

Infineon Technologies

IDC51D120T6MX1SA3 by Infineon Technologies

IDC51D120T6MX1SA3 by Infineon Technologies is a single rectifier diode with a max output current of 100A and max repetitive peak reverse voltage of 1200V. It operates in temperatures ranging from -40°C to 175°C, making it suitable for fast soft recovery applications. This surface-mount diode has a low max forward voltage of 2.05V and low reverse current of 18uA, ideal for high-power electronic systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,889 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Digiode

USA . 349 parts In-Stock

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349

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Distributors (Availability)

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Advanced Electronics

New Zealand . 60 parts In-Stock

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$0.054

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$0.051

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$0.051

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60

$0.054

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$0.051

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Aztec Data Supply Inc.

USA . 2,168 parts In-Stock

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$0.110

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$0.110

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Modulus Dynamics

Lithuania . 16,242 parts In-Stock

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$0.170

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$0.163

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$0.156

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Corohmni

South Africa . 66 parts In-Stock

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$0.171

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Ampacity Inc.

Singapore . 1,474 parts In-Stock

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$1.010

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$1.010

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Semicontronic

India . 349 parts In-Stock

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$1.010

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$0.985

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$0.980

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349

$1.010

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AZTECH Wire

Italy . 717 parts In-Stock

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$8.623

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$8.623

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Continental Prestige Electronics

USA . 6,048 parts In-Stock

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Argo Parts USA

USA . 2,034 parts In-Stock

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Microchip USA

USA . 2,023 parts In-Stock

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Bastille Electronics

Australia . 600 parts In-Stock

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Corphita

USA . 198 parts In-Stock

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Overview

Upgrade your electronics with the IDC51D120T6MX1SA3 by Infineon Technologies. Known for their top-quality diodes and rectifiers, Infineon delivers reliable products that excel in fast soft recovery applications. With a maximum output current of 100A and a maximum reverse voltage of 1200V, this single-configured, surface-mount diode offers superior performance and efficiency. Trust Infineon to provide cutting-edge technology that meets your needs and exceeds your expectations. Elevate your projects with the IDC51D120T6MX1SA3 today!

Feature Benefit Bullets

Config: SINGLE

Single configuration allows for easier integration into various circuit designs.

Surface Mount: YES

Surface mount capability simplifies PCB assembly process and saves space on the circuit board.

Maximum Reverse Current: 18 uA

Low maximum reverse current ensures minimal power loss and efficient operation.

Package Shape: RECTANGULAR

Rectangular package shape offers easy handling and installation on the PCB.

Application: FAST SOFT RECOVERY

Designed for fast soft recovery applications, making it suitable for high-speed circuits.

Maximum Operating Temperature: 175 °C

High maximum operating temperature tolerance ensures reliable performance in various environments.

Minimum Operating Temperature: -40 °C

Wide range of minimum operating temperature allows for versatility in different operating conditions.

Diode Type: RECTIFIER DIODE

Rectifier diode type ensures efficient conversion of AC to DC power, making it ideal for rectification applications.

Maximum Forward Voltage (VF): 2.05 V

Low maximum forward voltage drop results in minimal power loss during conduction.

Maximum Output Current: 100 A

High maximum output current capacity allows for handling larger loads with ease.

Maximum Repetitive Peak Reverse Voltage: 1200 V

High maximum repetitive peak reverse voltage rating provides robust protection against reverse voltage spikes.

Diode Element Material: SILICON

Silicon diode element material ensures reliable and stable performance over a wide range of operating conditions.

Technical Specifications

Diodes & Rectifiers IDC51D120T6MX1SA3 attributes and parameters. Explore more Diodes & Rectifiers devices from Infineon Technologies

Specs

Application:

FAST SOFT RECOVERY

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

2.05 V

JESD-30 Code:

R-XUUC-N1

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

1

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

100 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

UNCASED CHIP

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Repetitive Peak Reverse Voltage:

1200 V

Maximum Reverse Current:

18 uA

Surface Mount:

YES

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

IDC51D120T6MX1SA3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.40

SB

8541.10.00.40

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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