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2SC2712-GR,LF

Toshiba

2SC2712-GR,LF by Toshiba

The Toshiba 2SC2712-GR,LF is a NPN BJT transistor with max VCEsat of 0.25V and hFE of 200. Ideal for amplifier applications, it has a max IC of 0.15A, fT of 80MHz, and operates up to 125°C. This surface-mount transistor in a small outline package offers high performance in compact designs.

Median Price

$0.055

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Overview

Unlock the power of innovation with the 2SC2712-GR,LF by Toshiba. As a leading manufacturer in the industry, Toshiba delivers top-notch quality and reliability in small signal bipolar junction transistors. Ideal for amplifier applications, this NPN transistor offers a maximum VCEsat of 0.25V and a minimum DC current gain of 200, ensuring optimal performance. With a compact package style and peak reflow temperature of 260°C, this transistor is versatile and durable for a wide range of electronic projects. Trust Toshiba to provide the cutting-edge technology you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for easy handling and protection against damage.

Polarity or Channel Type: NPN

NPN type allows for easy integration into existing circuits and systems.

Configuration: SINGLE

Simple single configuration for straightforward implementation in circuit designs.

Transistor Application: AMPLIFIER

Designed specifically for amplification applications, ensuring reliable performance.

Surface Mount: YES

Allows for easy and secure mounting on PCBs, enhancing the overall stability of the system.

Maximum VCEsat: 0.25 V

Low VCEsat ensures efficient power usage and minimal heat generation.

Package Shape: RECTANGULAR

Compact rectangular shape for easy placement and space-saving in circuit layouts.

Terminal Form: GULL WING

Gull wing terminals provide strong connection points for reliable performance.

No. of Terminals: 3

Three terminals for easy connection and integration into circuit designs.

Maximum Power Dissipation (Abs): 0.15 W

Low power dissipation for energy efficiency and reduced heat buildup.

Package Style (Meter): SMALL OUTLINE

Small outline package for compact and streamlined circuit designs.

Maximum Power Dissipation Ambient: 0.15 W

Consistent power dissipation capability under various ambient conditions.

Minimum DC Current Gain (hFE): 200

High DC current gain for optimal amplification and signal strength.

Maximum Operating Temperature: 125 °C

High operating temperature range for versatile use in different environments.

Maximum Collector-Base Capacitance: 3.5 pF

Low capacitance for minimal signal distortion and improved performance.

Maximum Collector-Emitter Voltage: 50 V

High collector-emitter voltage rating for reliable operation in varying conditions.

Transistor Element Material: SILICON

Silicon material for efficient electron mobility and stable transistor performance.

Maximum Collector Current (IC): 0.15 A

High collector current rating for handling increased loads and signals.

Terminal Position: DUAL

Dual terminal position for flexible connection options in circuit layouts.

Peak Reflow Temperature °C: 260

High peak reflow temperature for secure soldering and durable connections.

Nominal Transition Frequency (fT): 80 MHz

High transition frequency for fast signal processing and efficiency in amplification tasks.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SC2712-GR,LF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Toshiba

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3.5 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.15 W

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.25 V

Trade Compliance

2SC2712-GR,LF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Toshiba

TOSHIBA, is a Japanese multinational conglomerate corporation headquartered in Minato, Tokyo, Japan. Its diversified products and services include power, industrial and social infrastructure systems, elevators and escalators, electronic components, semiconductors, hard disk drives (HDD), printers, batteries, lighting, as well as IT solutions such as quantum cryptography which has been in development at Cambridge Research Laboratory, Toshiba Europe, located in the United Kingdom, now being commercialised.It was one of the biggest manufacturers of personal computers, consumer electronics, home appliances, and medical equipment. As a semiconductor company and the inventor of flash memory, Toshiba had been one of the top 10 in the chip industry until its flash memory unit was spun off as Toshiba Memory, later Kioxia, in the late 2010s.

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