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TMS27C510-12JL

Texas Instruments

TMS27C510-12JL by Texas Instruments

TMS27C510-12JL by Texas Instruments is a 64KX8 EPROM with 120ns access time, operating at 5V. It features a CMOS technology, 3-STATE output, and through-hole terminal form. Commonly used in commercial applications for storing data due to its 524288-bit memory density and parallel operation mode.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,697 parts In-Stock

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5,697

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Digiode

USA . 827 parts In-Stock

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827

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Distributors (Availability)

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Parana Technologies

USA . 1,822 parts In-Stock

1+ parts

$3.557

100+ parts

-

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$4.079

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1,822

$3.557

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$4.079

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DigiPath Technology Company

USA . 932 parts In-Stock

1+ parts

$3.917

100+ parts

$3.604

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932

$3.917

$3.604

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IDEA Electronic Components Group

UK . 1,655 parts In-Stock

1+ parts

$3.997

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$3.597

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1,655

$3.997

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$3.597

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ChromeModa Solutions

Germany . 1,330 parts In-Stock

1+ parts

$3.997

100+ parts

$3.278

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1,330

$3.997

$3.278

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AZTECH Wire

Italy . 802 parts In-Stock

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$7.357

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802

$7.357

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One Stop Electronics

USA . 981 parts In-Stock

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$27.000

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981

$27.000

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Corphita

USA . 160 parts In-Stock

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160

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Overview

Unlock the power of reliable and high-quality memory with the TMS27C510-12JL by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments ensures top-notch performance and durability in every product they create. The TMS27C510-12JL falls under the EPROM category, offering a wide range of applications for various industries. With a 64KX8 organization and 3-STATE output characteristics, this memory chip provides seamless operation and efficient data storage. Trust Texas Instruments to deliver unmatched value, benefits, and advantages to meet your memory needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent protection for the EPROM, making it durable and reliable for long-term use.

Operating Mode: ASYNCHRONOUS

Allows for flexible and independent operation, enhancing the versatility of the EPROM.

Nominal Supply Voltage / Vsup (V): 5

Standard supply voltage ensures compatibility with a wide range of systems and applications.

No. of Terminals: 32

Sufficient terminals for connectivity and integration with other components in a system.

Organization: 64KX8

Efficient organization of memory cells for optimal performance and storage capacity.

Memory Width: 8

Suitable memory width for storing and retrieving data efficiently.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, ideal for energy-efficient devices.

Maximum Access Time: 120 ns

Fast access time ensures quick data retrieval and processing, enhancing overall performance.

Technical Specifications

EPROM TMS27C510-12JL attributes and parameters. Explore more EPROM devices from Texas Instruments

Specs

Maximum Access Time:

120 ns

Input/Output Type:

COMMON

JESD-30 Code:

R-CDIP-T32

Length:

41.91 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

32

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

ASYNCHRONOUS

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Organization:

64KX8

Output Characteristics:

3-STATE

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Code:

Package Equivalence Code:

DIP32,.6

Package Shape:

Package Style (Meter):

IN-LINE, WINDOW

Parallel or Serial:

PARALLEL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

4.91 mm

Maximum Standby Current:

.00025 Amp

Sub-Category:

EPROMs

Maximum Supply Current:

30 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

15.24 mm

Trade Compliance

TMS27C510-12JL Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.61

SB

8542.32.00.60

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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