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TLV321AC36IPTR

Texas Instruments

TLV321AC36IPTR by Texas Instruments

TLV321AC36IPTR by Texas Instruments is a cellphone IC with 48 terminals in a square package. It operates b/w -40 to 85°C, suitable for industrial use. With a nominal voltage of 3V, it is ideal for baseband circuit applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,006 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,006

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-

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Vyrian

USA . 3,918 parts In-Stock

1+ parts

-

100+ parts

-

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3,918

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,415 parts In-Stock

1+ parts

$14.573

100+ parts

-

1k+ parts

$15.010

10k+ parts

-

1,415

$14.573

-

$15.010

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DigiPath Technology Company

USA . 2,148 parts In-Stock

1+ parts

$16.047

100+ parts

$14.763

1k+ parts

-

10k+ parts

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2,148

$16.047

$14.763

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ChromeModa Solutions

Germany . 4,365 parts In-Stock

1+ parts

$16.374

100+ parts

$13.427

1k+ parts

-

10k+ parts

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4,365

$16.374

$13.427

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IDEA Electronic Components Group

UK . 235 parts In-Stock

1+ parts

$16.374

100+ parts

$15.555

1k+ parts

$14.737

10k+ parts

-

235

$16.374

$15.555

$14.737

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AZTECH Wire

Italy . 292 parts In-Stock

1+ parts

$18.866

100+ parts

-

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292

$18.866

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One Stop Electronics

USA . 419 parts In-Stock

1+ parts

$561.000

100+ parts

-

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10k+ parts

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419

$561.000

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Corphita

USA . 4,880 parts In-Stock

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4,880

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Overview

Experience the ultimate in performance and reliability with the TLV321AC36IPTR by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality Cellphone ICs that are perfect for a wide range of applications. From baseband circuits to advanced telecommunications systems, this product offers unmatched value and benefits to customers. With its robust design, high-quality materials, and innovative technology, the TLV321AC36IPTR is the ideal choice for your next project. Trust Texas Instruments to provide you with the best solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material offers good thermal and electrical insulation, making the product durable and reliable.

Surface Mount: YES

Surface mount technology allows for efficient and compact PCB assembly, saving space and reducing production costs.

No. of Terminals: 48

Having a high number of terminals allows for more connections and functionality in the cell phone IC.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, the IC can withstand harsh environments and maintain performance under stress.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical support and make soldering easier, enhancing overall reliability.

Telecom IC Type: BASEBAND CIRCUIT

Being a baseband circuit IC, it is responsible for crucial functions like signal processing, making it essential for cell phone operation.

Nominal Supply Voltage: 3 V

With a low nominal supply voltage, the IC is energy-efficient and helps extend battery life in cell phones.

Technical Specifications

Cellphone ICs TLV321AC36IPTR attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQFP-G48

Length:

7 mm

No. of Functions:

1

No. of Terminals:

48

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Maximum Seated Height:

1.6 mm

Nominal Supply Voltage:

3 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

7 mm

Trade Compliance

TLV321AC36IPTR Telecommunications trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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