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MSP430F67661IPZR

Texas Instruments

MSP430F67661IPZR by Texas Instruments

MSP430F67661IPZR by Texas Instruments is a 16-bit microprocessor with 262144 ROM words and 16384 RAM bytes. Operating at -40 to 85 °C, it has a supply voltage range of 1.8-3.6 V, making it ideal for industrial applications requiring low power consumption and high performance in a compact form factor.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,233 parts In-Stock

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Digiode

USA . 577 parts In-Stock

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577

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One Stop Electronics

USA . 402 parts In-Stock

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$4.000

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-

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402

$4.000

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AZTECH Wire

Italy . 396 parts In-Stock

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$9.533

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396

$9.533

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Corohmni

South Africa . 3,018 parts In-Stock

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$28.713

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$28.713

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Parana Technologies

USA . 1,625 parts In-Stock

1+ parts

$41.193

100+ parts

$3,825.373

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$37.073

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1,625

$41.193

$3,825.373

$37.073

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DigiPath Technology Company

USA . 39 parts In-Stock

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$45.358

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39

$45.358

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ChromeModa Solutions

Germany . 4,592 parts In-Stock

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$46.284

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$37.953

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4,592

$46.284

$37.953

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IDEA Electronic Components Group

UK . 1,907 parts In-Stock

1+ parts

$46.284

100+ parts

$43.970

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$41.656

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$46.284

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$41.656

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Microchip USA

USA . 308 parts In-Stock

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Corphita

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Overview

Unlock the power of innovation with the Texas Instruments MSP430F67661IPZR. Crafted with precision and expertise, this microprocessor circuit offers unparalleled performance and reliability for a wide range of applications. From industrial automation to consumer electronics, this versatile IC is designed to meet the demands of today's fast-paced world. With its cutting-edge technology and efficient design, the MSP430F67661IPZR provides customers with the value, benefits, and advantages they need to stay ahead of the competition. Embrace the future of technology with Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material for package body ensures reliability and ease of handling.

Maximum Supply Voltage: 3.6 V

Ability to operate at relatively high supply voltage allows for flexibility in power source selection.

Bit Size: 16

Provides a good balance between processing power and efficiency for various applications.

No. of Terminals: 100

Sufficient number of terminals for connectivity and integration into complex systems.

Minimum Operating Temperature: -40 °C

Wide operating temperature range ensures functionality in harsh environmental conditions.

ROM Words: 262144

Large ROM capacity allows for storing extensive program instructions and data.

RAM Bytes: 16384

Adequate RAM size for handling data processing and storage requirements efficiently.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity.

ROM Programmability: FLASH

Flash ROM programmability enables easy and quick updates to the software.

Speed: 25 rpm

Operates at a decent speed suitable for various real-time processing applications.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs MSP430F67661IPZR attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Bit Size:

16

CPU Family:

MSP430

JESD-30 Code:

S-PQFP-G100

JESD-609 Code:

e4

Length:

14 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

100

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP100,.63SQ,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/3.3

Qualification:

Not Qualified

RAM Bytes:

16384

ROM Words:

262144

ROM Programmability:

FLASH

Maximum Seated Height:

1.6 mm

Speed:

25 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

11.75 mA

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

1.8 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

14 mm

Peripheral IC Type:

Trade Compliance

MSP430F67661IPZR Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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