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LMV227SD/NOPB

Texas Instruments

LMV227SD/NOPB by Texas Instruments

LMV227SD/NOPB by Texas Instruments is a cellphone IC with 6 terminals in a small outline package. It operates b/w -40 to 85°C, suitable for industrial use. This RF and baseband circuit has a nominal voltage of 2.7V, making it ideal for telecom applications.

Median Price

$0.800

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,000 parts In-Stock

1+ parts

$0.420

100+ parts

$0.410

1k+ parts

$0.400

10k+ parts

-

1,000

$0.420

$0.410

$0.400

-

DigiKey

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.800

10k+ parts

-

1,000

-

-

$0.800

-

Verical

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.817

10k+ parts

-

1,000

-

-

$0.817

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,627 parts In-Stock

1+ parts

$0.731

100+ parts

-

1k+ parts

-

10k+ parts

-

1,627

$0.731

-

-

-

Vyrian

USA . 5,409 parts In-Stock

1+ parts

$0.769

100+ parts

-

1k+ parts

-

10k+ parts

-

5,409

$0.769

-

-

-

Anansix

USA . 2,272 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,272

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 741 parts In-Stock

1+ parts

$0.692

100+ parts

-

1k+ parts

-

10k+ parts

-

741

$0.692

-

-

-

Parana Technologies

USA . 2,140 parts In-Stock

1+ parts

$7.375

100+ parts

-

1k+ parts

$7.868

10k+ parts

-

2,140

$7.375

-

$7.868

-

DigiPath Technology Company

USA . 446 parts In-Stock

1+ parts

$8.120

100+ parts

$7.471

1k+ parts

-

10k+ parts

-

446

$8.120

$7.471

-

-

ChromeModa Solutions

Germany . 2,362 parts In-Stock

1+ parts

$8.286

100+ parts

$6.795

1k+ parts

-

10k+ parts

-

2,362

$8.286

$6.795

-

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IDEA Electronic Components Group

UK . 2,027 parts In-Stock

1+ parts

$8.286

100+ parts

$7.872

1k+ parts

$7.457

10k+ parts

-

2,027

$8.286

$7.872

$7.457

-

Component Stockers USA

USA . 787 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

787

$99.990

-

-

-

Overview

Elevate your cellphone performance with the LMV227SD/NOPB by Texas Instruments. Crafted with precision and expertise, this high-quality Cellphone IC offers seamless integration and enhanced functionality for your device. Experience unparalleled reliability and efficiency with Texas Instruments' cutting-edge technology, designed to meet the demands of modern telecommunications. Elevate your cellphone experience with the LMV227SD/NOPB and enjoy the benefits of superior performance and value.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight, durable, and cost-effective, making the cellphone ICs easy to handle and long-lasting.

Surface Mount: YES

Surface mount packaging allows for easier assembly and better utilization of PCB space, enhancing the overall performance and efficiency of the product.

Temperature Grade: INDUSTRIAL

With an industrial temperature grade, these cellphone ICs are designed to withstand a wide range of temperatures, making them suitable for various environments and applications.

Nominal Supply Voltage: 2.7 V

The 2.7 V supply voltage is ideal for powering the RF and baseband circuit in the cellphone ICs, ensuring optimal performance and efficiency.

Technical Specifications

Cellphone ICs LMV227SD/NOPB attributes and parameters. Explore more Cellphone ICs devices from Texas Instruments

Specs

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e3

Length:

2.5 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

6

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.8 mm

Nominal Supply Voltage:

2.7 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2.2 mm

Trade Compliance

LMV227SD/NOPB Telecommunications trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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