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DM355SZCEA135

Texas Instruments

DM355SZCEA135 by Texas Instruments

Texas Instruments DM355SZCEA135 is a 32-bit microprocessor with 337 terminals, operating at temperatures from -40 to 100°C. It has a max supply voltage of 1.365V and RAM words of 32768, suitable for industrial applications requiring high processing power in a compact form factor.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,649 parts In-Stock

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Digiode

USA . 1,360 parts In-Stock

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1,360

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Distributors (Availability)

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Northwest PG Solutions

USA . 161 parts In-Stock

1+ parts

$3.146

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161

$3.146

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One Stop Electronics

USA . 628 parts In-Stock

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$5.000

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628

$5.000

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AZTECH Wire

Italy . 240 parts In-Stock

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$16.243

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240

$16.243

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Corohmni

South Africa . 957 parts In-Stock

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$29.174

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957

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Parana Technologies

USA . 2,229 parts In-Stock

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$76.690

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$76.690

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DigiPath Technology Company

USA . 1,998 parts In-Stock

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$84.445

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$77.689

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$84.445

$77.689

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ChromeModa Solutions

Germany . 4,088 parts In-Stock

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$86.168

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$70.658

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IDEA Electronic Components Group

UK . 35 parts In-Stock

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$86.168

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$81.860

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$77.551

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35

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$77.551

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Native Components

USA . 978 parts In-Stock

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$2.774

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Corphita

USA . 162 parts In-Stock

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Microchip USA

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Overview

Elevate your electronic designs with the DM355SZCEA135 by Texas Instruments, a cutting-edge microprocessor circuit that delivers unparalleled performance and reliability. Manufactured with precision and expertise, this product is designed to meet the demands of industrial applications, ensuring seamless operation in any environment. With a wide range of power supplies and a temperature grade suitable for harsh conditions, this versatile IC offers unmatched value and benefits to customers seeking top-of-the-line technology. Take your projects to the next level with the DM355SZCEA135 and experience the quality and innovation that only Texas Instruments can provide.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the IC, ensuring a longer lifespan.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and reducing production costs.

Maximum Supply Voltage: 1.365 V

The maximum supply voltage is within a safe range, preventing damage to the IC and ensuring stable operation.

Package Shape: SQUARE

The square shape allows for efficient use of space on the PCB, making it suitable for compact designs.

Bit Size: 32

With a 32-bit architecture, this IC can handle complex processing tasks efficiently and effectively.

Power Supplies (V): 1.3,1.8,3.3

Support for multiple power supply voltages allows for flexibility in different application scenarios.

No. of Terminals: 337

Having a high number of terminals means that the IC can support a wide range of functionalities and connections.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The package style allows for high-density mounting, enhancing the overall performance and functionality of the IC.

Minimum Supply Voltage: 1.235 V

The lower minimum supply voltage ensures efficient power consumption and extends battery life in portable devices.

Maximum Operating Temperature: 100 °C

With a high maximum operating temperature, this IC can perform reliably in demanding industrial environments.

Minimum Operating Temperature: -40 °C

The wide operating temperature range makes this IC suitable for use in both extreme cold and hot conditions.

Terminal Finish: TIN SILVER COPPER

This terminal finish provides good conductivity and corrosion resistance, ensuring reliable connections.

Terminal Position: BOTTOM

The terminal position allows for easy and convenient mounting on the PCB, simplifying assembly processes.

Maximum Seated Height: 1.3 mm

The low seated height enables a compact overall design, ideal for space-constrained applications.

RAM Words: 32768

With a large RAM capacity, this IC can efficiently store and process data for complex applications.

Width: 13 mm

The compact width makes this IC suitable for slim and space-saving designs.

Maximum Time At Peak Reflow Temperature (s): 30

This time limit ensures safe and proper reflow soldering processes during manufacturing.

Peak Reflow Temperature °C: 260

The high peak reflow temperature allows for effective soldering and ensures proper connections on the PCB.

Length: 13 mm

The compact length contributes to a space-saving design and enhances overall PCB layout efficiency.

Temperature Grade: INDUSTRIAL

The industrial temperature grade ensures reliable operation in harsh environmental conditions.

Peripheral IC Type: MICROPROCESSOR CIRCUIT

This peripheral IC type supports complex processing tasks, making it suitable for a wide range of applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, enhancing the efficiency of the IC.

Terminal Form: BALL

The ball terminal form provides good solder joint reliability and mechanical strength, ensuring stable connections.

Nominal Supply Voltage: 1.3 V

The nominal supply voltage ensures stable and efficient operation of the IC in various applications.

Terminal Pitch: 0.65 mm

The small terminal pitch allows for high-density mounting and efficient use of PCB space.

Format: FIXED POINT

The fixed-point format simplifies mathematical calculations and enhances computational efficiency.

Moisture Sensitivity Level (MSL): 3

The moisture sensitivity level indicates the level of protection against moisture-related damage, ensuring long-term reliability.

Technical Specifications

Other Function uPs,uCs & Peripheral ICs DM355SZCEA135 attributes and parameters. Explore more Other Function uPs,uCs & Peripheral ICs devices from Texas Instruments

Specs

Bit Size:

32

Format:

FIXED POINT

JESD-30 Code:

S-PBGA-B337

JESD-609 Code:

e1

Length:

13 mm

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

337

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA337,19X19,25

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.3,1.8,3.3

Qualification:

Not Qualified

RAM Words:

32768

Maximum Seated Height:

1.3 mm

Sub-Category:

Digital Signal Processors

Maximum Supply Voltage:

1.365 V

Minimum Supply Voltage:

1.235 V

Nominal Supply Voltage:

1.3 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

13 mm

Peripheral IC Type:

Trade Compliance

DM355SZCEA135 Peripheral ICs trade compliance attributes, and parameters.

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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